JP2011148087A5 - - Google Patents

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Publication number
JP2011148087A5
JP2011148087A5 JP2011011011A JP2011011011A JP2011148087A5 JP 2011148087 A5 JP2011148087 A5 JP 2011148087A5 JP 2011011011 A JP2011011011 A JP 2011011011A JP 2011011011 A JP2011011011 A JP 2011011011A JP 2011148087 A5 JP2011148087 A5 JP 2011148087A5
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JP
Japan
Prior art keywords
fluence
semiconductor material
annealing
laser pulse
changing
Prior art date
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Application number
JP2011011011A
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English (en)
Japanese (ja)
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JP5529053B2 (ja
JP2011148087A (ja
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Publication of JP2011148087A publication Critical patent/JP2011148087A/ja
Publication of JP2011148087A5 publication Critical patent/JP2011148087A5/ja
Application granted granted Critical
Publication of JP5529053B2 publication Critical patent/JP5529053B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011011011A 2010-01-22 2011-01-21 マイクロマシンデバイスの製造方法およびマイクロマシンデバイス Expired - Fee Related JP5529053B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29739210P 2010-01-22 2010-01-22
US61/297,392 2010-01-22

Publications (3)

Publication Number Publication Date
JP2011148087A JP2011148087A (ja) 2011-08-04
JP2011148087A5 true JP2011148087A5 (enExample) 2014-02-06
JP5529053B2 JP5529053B2 (ja) 2014-06-25

Family

ID=43807129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011011011A Expired - Fee Related JP5529053B2 (ja) 2010-01-22 2011-01-21 マイクロマシンデバイスの製造方法およびマイクロマシンデバイス

Country Status (3)

Country Link
US (1) US8383441B2 (enExample)
EP (1) EP2347993B1 (enExample)
JP (1) JP5529053B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014003843A1 (en) * 2012-06-29 2014-01-03 Regents Of The University Of Minnesota Method of forming individual metallic microstructures
US9039753B2 (en) 2012-09-05 2015-05-26 Jeff Thramann System and method to electrically charge implantable devices
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
JP2019054143A (ja) * 2017-09-15 2019-04-04 株式会社東芝 接続構造およびその製造方法ならびにセンサ
EP3916122A1 (en) 2020-05-28 2021-12-01 Solmates B.V. Method for controlling stress in a substrate during laser deposition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054277B2 (ja) 1981-08-08 1985-11-29 富士通株式会社 非単結晶半導体層の単結晶化方法
US4475955A (en) * 1982-12-06 1984-10-09 Harris Corporation Method for forming integrated circuits bearing polysilicon of reduced resistance
US20020192914A1 (en) * 2001-06-15 2002-12-19 Kizilyalli Isik C. CMOS device fabrication utilizing selective laser anneal to form raised source/drain areas
US7763947B2 (en) * 2002-04-23 2010-07-27 Sharp Laboratories Of America, Inc. Piezo-diode cantilever MEMS
US6922272B1 (en) * 2003-02-14 2005-07-26 Silicon Light Machines Corporation Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices
KR100954332B1 (ko) * 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7696031B2 (en) * 2004-06-14 2010-04-13 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing semiconductor device
EP1801067A3 (en) * 2005-12-21 2012-05-09 Imec Method for forming silicon germanium layers at low temperatures for controlling stress gradient
US7651896B2 (en) * 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110068342A1 (en) * 2009-09-18 2011-03-24 Themistokles Afentakis Laser Process for Minimizing Variations in Transistor Threshold Voltages

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