JP5529053B2 - マイクロマシンデバイスの製造方法およびマイクロマシンデバイス - Google Patents

マイクロマシンデバイスの製造方法およびマイクロマシンデバイス Download PDF

Info

Publication number
JP5529053B2
JP5529053B2 JP2011011011A JP2011011011A JP5529053B2 JP 5529053 B2 JP5529053 B2 JP 5529053B2 JP 2011011011 A JP2011011011 A JP 2011011011A JP 2011011011 A JP2011011011 A JP 2011011011A JP 5529053 B2 JP5529053 B2 JP 5529053B2
Authority
JP
Japan
Prior art keywords
fluence
region
layer
semiconductor material
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011011011A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011148087A5 (enExample
JP2011148087A (ja
Inventor
ジョウマナ・エル・リファイ
アン・ウィトフラウ
アフメド・カマル・サイド・アブデル・アジズ
シェリフ・セドキー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
American University in Cairo
Original Assignee
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
American University in Cairo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Katholieke Universiteit Leuven, Interuniversitair Microelektronica Centrum vzw IMEC, American University in Cairo filed Critical Katholieke Universiteit Leuven
Publication of JP2011148087A publication Critical patent/JP2011148087A/ja
Publication of JP2011148087A5 publication Critical patent/JP2011148087A5/ja
Application granted granted Critical
Publication of JP5529053B2 publication Critical patent/JP5529053B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Thin Film Transistor (AREA)
JP2011011011A 2010-01-22 2011-01-21 マイクロマシンデバイスの製造方法およびマイクロマシンデバイス Expired - Fee Related JP5529053B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29739210P 2010-01-22 2010-01-22
US61/297,392 2010-01-22

Publications (3)

Publication Number Publication Date
JP2011148087A JP2011148087A (ja) 2011-08-04
JP2011148087A5 JP2011148087A5 (enExample) 2014-02-06
JP5529053B2 true JP5529053B2 (ja) 2014-06-25

Family

ID=43807129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011011011A Expired - Fee Related JP5529053B2 (ja) 2010-01-22 2011-01-21 マイクロマシンデバイスの製造方法およびマイクロマシンデバイス

Country Status (3)

Country Link
US (1) US8383441B2 (enExample)
EP (1) EP2347993B1 (enExample)
JP (1) JP5529053B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014003843A1 (en) * 2012-06-29 2014-01-03 Regents Of The University Of Minnesota Method of forming individual metallic microstructures
US9039753B2 (en) 2012-09-05 2015-05-26 Jeff Thramann System and method to electrically charge implantable devices
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
JP2019054143A (ja) * 2017-09-15 2019-04-04 株式会社東芝 接続構造およびその製造方法ならびにセンサ
EP3916122A1 (en) 2020-05-28 2021-12-01 Solmates B.V. Method for controlling stress in a substrate during laser deposition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054277B2 (ja) 1981-08-08 1985-11-29 富士通株式会社 非単結晶半導体層の単結晶化方法
US4475955A (en) * 1982-12-06 1984-10-09 Harris Corporation Method for forming integrated circuits bearing polysilicon of reduced resistance
US20020192914A1 (en) * 2001-06-15 2002-12-19 Kizilyalli Isik C. CMOS device fabrication utilizing selective laser anneal to form raised source/drain areas
US7763947B2 (en) * 2002-04-23 2010-07-27 Sharp Laboratories Of America, Inc. Piezo-diode cantilever MEMS
US6922272B1 (en) * 2003-02-14 2005-07-26 Silicon Light Machines Corporation Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices
KR100954332B1 (ko) * 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7696031B2 (en) * 2004-06-14 2010-04-13 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing semiconductor device
EP1801067A3 (en) * 2005-12-21 2012-05-09 Imec Method for forming silicon germanium layers at low temperatures for controlling stress gradient
US7651896B2 (en) * 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110068342A1 (en) * 2009-09-18 2011-03-24 Themistokles Afentakis Laser Process for Minimizing Variations in Transistor Threshold Voltages

Also Published As

Publication number Publication date
EP2347993A2 (en) 2011-07-27
EP2347993B1 (en) 2018-11-14
EP2347993A3 (en) 2012-03-07
US20110180886A1 (en) 2011-07-28
US8383441B2 (en) 2013-02-26
JP2011148087A (ja) 2011-08-04

Similar Documents

Publication Publication Date Title
US9874534B2 (en) Flexible and stretchable sensors formed by patterned spalling
JP5529053B2 (ja) マイクロマシンデバイスの製造方法およびマイクロマシンデバイス
US8367451B2 (en) Method and structures for fabricating MEMS devices on compliant layers
US6440766B1 (en) Microfabrication using germanium-based release masks
Tsuchiya et al. Young's modulus, fracture strain, and tensile strength of sputtered titanium thin films
Wang et al. Avoiding blister defects in low-stress hydrogenated amorphous silicon films for MEMS sensors
US8709957B2 (en) Spalling utilizing stressor layer portions
TW201118035A (en) Fabricating method of single chip for intergating with field-effect transistor and MEMS
Pinto et al. Amorphous silicon self‐rolling micro electromechanical systems: from residual stress control to complex 3D structures
KR20080097243A (ko) 멤브레인 구조 소자 및 그 제조 방법
CN106744657B (zh) 一种三维GeSn微纳尺度悬臂结构的制备方法
Kirchner et al. Anisotropic etching of pyramidal silica reliefs with metal masks and hydrofluoric acid
US20100032812A1 (en) Method for forming silicon germanium layers at low temperatures, layers formed therewith and structures comprising such layers
US7754617B2 (en) Polysilicon deposition and anneal process enabling thick polysilicon films for MEMS applications
Sandoughsaz et al. Realization of complex three-dimensional free-standing structures on silicon substrates using controllable underetching in a deep reactive ion etching
JP2006216891A (ja) 薄膜素子構造の作製方法、及び薄膜素子構造作製用の機能性基体
JP3125048B2 (ja) 薄膜平面構造体の製造方法
El-Rifai et al. Selective laser annealing for improved SiGe MEMS structural layers at 210° C
Fujii et al. Effects of Vacuum Annealing on Mechanical Properties of Gallium-implanted Silicon Nanowires.
Reid et al. A novel method for in situ electromechanical characterization of nanoscale specimens
KR101118007B1 (ko) 마이크로캔틸레버 및 그 제조 방법과 실리콘 박막 및 그 제조방법
Aimi Bulk titanium microelectromechanical systems
KR101049702B1 (ko) 마이크로캔틸레버 및 그 제조 방법과 실리콘 박막 및 그 제조방법
US7470462B2 (en) Method to control residual stress in a film structure and a system thereof
US8853797B2 (en) MEMS devices and fabrication thereof

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131216

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20131216

TRDD Decision of grant or rejection written
A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20140307

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140318

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140416

R150 Certificate of patent or registration of utility model

Ref document number: 5529053

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees