ZA201904720B - Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashion - Google Patents
Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashionInfo
- Publication number
- ZA201904720B ZA201904720B ZA2019/04720A ZA201904720A ZA201904720B ZA 201904720 B ZA201904720 B ZA 201904720B ZA 2019/04720 A ZA2019/04720 A ZA 2019/04720A ZA 201904720 A ZA201904720 A ZA 201904720A ZA 201904720 B ZA201904720 B ZA 201904720B
- Authority
- ZA
- South Africa
- Prior art keywords
- crystallization
- mono
- melting
- seed crystal
- ingot casting
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710019679.2A CN106591937B (en) | 2017-01-12 | 2017-01-12 | A kind of ingot melting crystallization processes of depressed class single crystal seed |
PCT/CN2017/119326 WO2018130078A1 (en) | 2017-01-12 | 2017-12-28 | Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashion |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA201904720B true ZA201904720B (en) | 2020-02-26 |
Family
ID=58583275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA2019/04720A ZA201904720B (en) | 2017-01-12 | 2019-07-18 | Process for ingot casting, melting, and crystallization of mono-like seed crystal in concave fashion |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN106591937B (en) |
WO (1) | WO2018130078A1 (en) |
ZA (1) | ZA201904720B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106591937B (en) * | 2017-01-12 | 2019-11-26 | 南通大学 | A kind of ingot melting crystallization processes of depressed class single crystal seed |
CN109161965A (en) * | 2018-09-12 | 2019-01-08 | 晶科能源有限公司 | Cast class method for preparing single crystal |
CN113802179B (en) * | 2020-06-17 | 2023-06-06 | 苏州阿特斯阳光电力科技有限公司 | Single-crystal-like ingot casting seed crystal laying equipment and control method thereof |
CN113943975B (en) * | 2020-07-15 | 2023-04-07 | 苏州阿特斯阳光电力科技有限公司 | Charging method for ingot growing silicon crystal |
CN114481319A (en) * | 2020-10-26 | 2022-05-13 | 福建新峰二维材料科技有限公司 | Cast crystalline silicon preparation method capable of reducing dislocation defects and polycrystalline proportion |
CN113186596B (en) * | 2021-05-06 | 2023-03-24 | 南通大学 | Regenerative polycrystalline silicon ingot casting process based on layered charging mode |
CN116514579A (en) * | 2023-03-31 | 2023-08-01 | 徐州协鑫太阳能材料有限公司 | Black sand full-melting efficient crucible for polycrystalline ingot casting and preparation method |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3368113B2 (en) * | 1995-09-05 | 2003-01-20 | シャープ株式会社 | Manufacturing method of polycrystalline semiconductor |
FR2908125B1 (en) * | 2006-11-02 | 2009-11-20 | Commissariat Energie Atomique | PROCESS FOR PURIFYING METALLURGICAL SILICON BY DIRECTED SOLIDIFICATION |
CN101935867A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Method for growing large-grain cast multicrystalline silicon |
CN101928980B (en) * | 2010-09-17 | 2012-10-03 | 浙江碧晶科技有限公司 | Seeding guidance die for growing silicon crystal by directional solidification method |
CN102758242B (en) * | 2011-04-25 | 2015-04-08 | 江西赛维Ldk太阳能高科技有限公司 | Charging method in monocrystalline silicon ingot casting, and monocrystalline silicon ingot casting method |
CN102268724B (en) * | 2011-07-28 | 2014-04-16 | 英利能源(中国)有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
CN202440564U (en) * | 2011-12-31 | 2012-09-19 | 英利能源(中国)有限公司 | Monocrystalline-silicon-like ingot furnace and seed crystals used by same |
CN202945375U (en) * | 2012-11-16 | 2013-05-22 | 晶科能源有限公司 | Device for protecting seed crystal integrity in polycrystal ingot furnace |
CN102936747B (en) * | 2012-12-07 | 2015-06-10 | 天威新能源控股有限公司 | Method for casting ingot of pseudo-single crystal through large-sized crucible |
CN203474952U (en) * | 2013-09-09 | 2014-03-12 | 江苏协鑫硅材料科技发展有限公司 | Quartz crucible for ingot casting |
FR3026414B1 (en) * | 2014-09-26 | 2019-04-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | CREUSET FOR CRYSTALLIZING MULTI-CRYSTALLINE SILICON OR QUASI-MONOCRYSTALLINE BY REPEATING ON GERM |
CN104532343B (en) * | 2014-11-07 | 2017-06-06 | 江苏美科硅能源有限公司 | The preparation method and its fritting high-efficiency seed crystal of a kind of efficient ingot of fritting retain accessory plate |
CN104499046B (en) * | 2014-12-15 | 2017-02-22 | 山西潞安太阳能科技有限责任公司 | Preparation method of polycrystalline silicon ingots |
CN105316758A (en) * | 2015-11-11 | 2016-02-10 | 常州天合光能有限公司 | Seed crystal laying method and single crystal growth method through ingotting |
CN105369351B (en) * | 2015-12-17 | 2017-11-28 | 江西赛维Ldk太阳能高科技有限公司 | A kind of polycrystal silicon ingot and preparation method thereof and polysilicon chip |
CN105568365B (en) * | 2016-02-03 | 2018-04-17 | 江西赛维Ldk太阳能高科技有限公司 | A kind of seed crystal laying method, crystalline silicon and preparation method thereof |
CN205474106U (en) * | 2016-04-05 | 2016-08-17 | 晶科能源有限公司 | Protection seed crystal type crucible |
CN205529143U (en) * | 2016-04-29 | 2016-08-31 | 晶科能源有限公司 | Polycrystalline silicon ingot furnace and be applied to device in polycrystalline silicon ingot furnace |
CN106012008A (en) * | 2016-07-26 | 2016-10-12 | 晶科能源有限公司 | Charging method for polycrystalline silicon ingot casting process |
CN106591937B (en) * | 2017-01-12 | 2019-11-26 | 南通大学 | A kind of ingot melting crystallization processes of depressed class single crystal seed |
-
2017
- 2017-01-12 CN CN201710019679.2A patent/CN106591937B/en active Active
- 2017-12-28 WO PCT/CN2017/119326 patent/WO2018130078A1/en active Application Filing
-
2019
- 2019-07-18 ZA ZA2019/04720A patent/ZA201904720B/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN106591937A (en) | 2017-04-26 |
CN106591937B (en) | 2019-11-26 |
WO2018130078A1 (en) | 2018-07-19 |
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