CN202945375U - Device for protecting seed crystal integrity in polycrystal ingot furnace - Google Patents
Device for protecting seed crystal integrity in polycrystal ingot furnace Download PDFInfo
- Publication number
- CN202945375U CN202945375U CN 201220606766 CN201220606766U CN202945375U CN 202945375 U CN202945375 U CN 202945375U CN 201220606766 CN201220606766 CN 201220606766 CN 201220606766 U CN201220606766 U CN 201220606766U CN 202945375 U CN202945375 U CN 202945375U
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- Prior art keywords
- ingot furnace
- seed crystal
- polycrystal ingot
- radiation
- integrity
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Abstract
The utility model relates to a device for protecting the seed crystal integrity in a polycrystal ingot furnace. A common polycrystal ingot furnace thermal field device only has a graphite protective plate, in a polycrystal ingot furnace thermal field device of the device for protecting seed crystal integrity in the polycrystal ingot furnace, a circle of radiation dam-boards are additionally arranged at the side lower part of the graphite protective plate so as to resist one-off radiation of a heater at the side, the heat received by the bottom is reduced and bottom temperature gradient is increased, seed crystal at the bottom keeps complete by 100%, and the volume of single crystal accounts for more than 90%, so that the problem of being not able to keep the seed crystal complete due to radiation is solved, and the polycrystal ingot furnace thermal field device is more convenient in process.
Description
Technical field
The utility model relates to the device of protection seed crystal integrity in the modifying device, particularly a kind of polycrystalline ingot furnace of a kind of polycrystalline ingot furnace thermal field growth class monocrystalline.
Background technology
The experiment of growth class monocrystalline obtains very many-sided breakthrough in polycrystalline ingot furnace in recent years, it is complete that but the bottom seed crystal is difficult to keep, make thawing time prolongation, monocrystalline ratio obviously descend, safeguard the integrity of seed crystal in the urgent need to a kind of simple adjustable method.
Summary of the invention
The utility model provides a kind of to be passed through the outside installation of the graphite backplate in polycrystalline ingot furnace radiation baffle, thereby reaches the device that makes the complete brilliant integrity of protection of bottom son crystalline substance.
The technical solution of the utility model is:
Protective device in a kind of polycrystalline ingot furnace, wherein: the outside surrounding of graphite backplate is equipped with radiation baffle, and the graphite backplate is bolted with radiation baffle and is connected.
Protective device in a kind of polycrystalline ingot furnace, wherein: radiation baffle is 30-150mm apart from graphite backplate bottom level.
Protective device in a kind of polycrystalline ingot furnace, wherein: radiation baffle uses graphite, solidifies carbon,, carbon carbon material or molybdenum plate make, little with graphite backplate contact area, contact position is made convex shape.
The utility model has the advantage of: common polycrystalline ingot furnace thermal-field device; only has the graphite backplate; the utility model polycrystalline ingot furnace protective device is exactly to increase on the lower side the radiation baffle in a week at the sidepiece of graphite backplate; stop the disposable radiation of sidepiece well heater; reduce the bottom received heat; play and increase the bottom temp gradient; realize that bottom seed crystal 100% is complete; the monocrystalline volume accounts for more than 90%; solve the worry that can't keep sub brilliant integrity because of radiation, made the polycrystalline ingot furnace protective device in use convenient.
Description of drawings
Fig. 1 is the structural representation of the utility model thermal-field device;
Fig. 2 is the graphite backplate schematic diagram of the utility model thermal-field device;
Reference numeral: standing bolt 1, graphite backplate 2, radiation baffle 3.
Embodiment
The device of protection seed crystal integrity in embodiment 1, a kind of polycrystalline ingot furnace, wherein: the outside surrounding of graphite backplate 2 is equipped with radiation baffle 3, and graphite backplate 2 is fixedly connected with by bolt 1 with radiation baffle 3.
The device of protection seed crystal integrity in embodiment 2, a kind of polycrystalline ingot furnace, wherein: radiation baffle 3 is 30-150mm apart from graphite backplate 2 bottom level.All the other are with embodiment 1.
The device of protection seed crystal integrity in embodiment 3, a kind of polycrystalline ingot furnace, wherein: radiation baffle 3 uses graphite, curing carbon felt, carbon carbon material or molybdenum plate to make, and little with graphite backplate 2 contacts area, contact position is made convex shape.All the other are with embodiment 1.
Claims (2)
1. the device of protection seed crystal integrity in a polycrystalline ingot furnace, it is characterized in that: the outside surrounding of graphite backplate (2) is equipped with radiation baffle (3), and graphite backplate (2) is fixedly connected with by bolt (1) with radiation baffle (3).
2. protect the device of seed crystal integrity in a kind of polycrystalline ingot furnace as claimed in claim 1, it is characterized in that: radiation baffle (3) is 30-150mm apart from graphite backplate (2) bottom level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220606766 CN202945375U (en) | 2012-11-16 | 2012-11-16 | Device for protecting seed crystal integrity in polycrystal ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220606766 CN202945375U (en) | 2012-11-16 | 2012-11-16 | Device for protecting seed crystal integrity in polycrystal ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202945375U true CN202945375U (en) | 2013-05-22 |
Family
ID=48421082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220606766 Expired - Lifetime CN202945375U (en) | 2012-11-16 | 2012-11-16 | Device for protecting seed crystal integrity in polycrystal ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202945375U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591937A (en) * | 2017-01-12 | 2017-04-26 | 南通大学 | Depression type quasi single crystal seed crystal ingot melting crystallization process |
-
2012
- 2012-11-16 CN CN 201220606766 patent/CN202945375U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591937A (en) * | 2017-01-12 | 2017-04-26 | 南通大学 | Depression type quasi single crystal seed crystal ingot melting crystallization process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130522 |
|
| CX01 | Expiry of patent term |