CN202214449U

CN202214449U - Single crystal furnace

Info

Publication number: CN202214449U
Application number: CN2011202758400U
Authority: CN
Inventors: 陈春成; 戚建静
Original assignee: SUZHOU DONGTAI SOLAR TECHNOLOGY Co Ltd
Current assignee: SUZHOU DONGTAI SOLAR TECHNOLOGY Co Ltd
Priority date: 2011-08-01
Filing date: 2011-08-01
Publication date: 2012-05-09
Anticipated expiration: 2021-08-01

Abstract

The utility model relates to a single crystal furnace. The single crystal furnace comprises a furnace body and a heat field which is arranged inside the furnace body, wherein the heat field comprises a side wall insulating layer and a bottom insulating layer; and the side wall insulating layer and the bottom insulating layer comprise a solidified felt layer and a soft felt layer. The effective utilization space inside the furnace body can be enlarged by increasing the size of the heat field, so that the yield rate is greatly increased; and in the combination of the solidified felt layer and the soft felt layer, the production cost is reduced on the premise of improving the heat preserving performance of the heat field.

Description

A kind of single crystal growing furnace

Technical field

the utility model relates to a kind of single crystal growing furnace.

Background technology

The single crystal growing furnace that use for photovoltaic industry ; Monocrystalline silicon production need be put into the raw material polysilicon in the quartz crucible of single crystal growing furnace and melt; Thermal field then is the indispensable affiliated facility of manufacture order crystal silicon; Heating, insulation, heat shielding, leakproof (silicon) or the like all realize through thermal field.

18 cun thermal field 2 ' has been adopted like Fig. 3, the single crystal growing furnace shown in 4 in in body of heater 1 ', at thermal field 2 ' set inside having heaters 5 '.

Generally there is following shortcoming in above-mentioned single crystal growing furnace: the general thermal field of installing 18 cun in the stove makes that the space in the stove is wasted to some extent; The heat-insulating property of thermal field is poor; The rate of utilization of heat is lower, and production cost is raise.

Summary of the invention

the utility model provides a kind of single crystal growing furnace, particularly a kind of 95 type single crystal growing furnaces.

For achieving the above object, the technical scheme that the utility model adopts is:

a kind of single crystal growing furnace comprises body of heater, is arranged on the inner thermal field of described body of heater, described thermal field comprise sidewall thermal insulation layer, bottom thermal insulation layer, described sidewall thermal insulation layer and bottom thermal insulation layer comprise curing carpet veneer and soft carpet veneer.

preferably, described thermal field is of a size of 20 cun.

preferably, described sidewall thermal insulation layer is soft carpet veneer; Described bottom thermal insulation layer is for solidifying carpet veneer.

Because the technique scheme utilization, the utility model compared with prior art has advantage:

1, through increasing the size of thermal field,, reduces yield rate greatly to improve the inner effectively usage space of body of heater;

2, take through adopt solidifying carpet veneer and the mixed of soft carpet veneer, reduce when increasing the heat-insulating property of thermal field produce consume cost.

Description of drawings

Accompanying drawing 1 is a thermal field synoptic diagram in the utility model;

Accompanying drawing 2 is a thermal field internal structure synoptic diagram in the utility model;

Accompanying drawing 3 is a thermal field synoptic diagram in the prior art;

accompanying drawing 4 is a thermal field internal structure synoptic diagram in the prior art.

wherein: 1, body of heater; 2, thermal field; 3, sidewall thermal insulation layer; 30, soft carpet veneer; 4, bottom thermal insulation layer; 40, solidify carpet veneer; 5, well heater; 6, reflector.

Embodiment

Below in conjunction with accompanying drawing and embodiment the utility model is further described:

a kind of single crystal growing furnace as shown in Figure 1 comprises body of heater 1, is arranged on the inner thermal field 2 of body of heater 1, and in the present embodiment, thermal field 2 is set to 20 cun, to promote the effective usage space in the body of heater 1.

are as shown in Figure 2: thermal field 2 comprise sidewall thermal insulation layer 3, bottom thermal insulation layer 4, wherein, sidewall thermal insulation layer 3 and bottom thermal insulation layer 4 adopt and solidify carpet veneers and the mixed of soft carpet veneer taken, specifically, sidewall thermal insulation layer 3 is soft carpet veneer 30; Bottom thermal insulation layer 4 is for solidifying carpet veneer 40, to improve its heat preservation effect.

in the inside of thermal field 2, and concrete be provided with well heater 5, be positioned at well heater 5 bottoms and be provided with reflector 6, specifically, the setting that this reflector 6 and well heater 5 are perpendicular.After well heater 5 heating, the heat that a part is dispersed into well heater 5 bottoms reflexes to top through this reflector 6, avoids scattering and disappearing of heat.Like this,, effectively guarantee the heat that thermal field is inner, in the time of save energy, improve working (machining) efficiency through thermal insulation layer and reflector.

the foregoing description is only for explaining the technical conceive and the characteristics of the utility model; Its purpose is to let the personage who is familiar with this technology can understand content of the utility model and enforcement according to this, can not limit the protection domain of the utility model with this.All equivalences of being done according to the utility model spirit change or modify, and all should be encompassed within the protection domain of the utility model.

Claims

1. single crystal growing furnace is characterized in that: comprise body of heater, be arranged on the inner thermal field of described body of heater, described thermal field comprise sidewall thermal insulation layer, bottom thermal insulation layer, described sidewall thermal insulation layer and bottom thermal insulation layer comprise curing carpet veneer and soft carpet veneer.

2. a kind of single crystal growing furnace according to claim 1 is characterized in that: described thermal field is of a size of 20 cun.

3. a kind of single crystal growing furnace according to claim 1 is characterized in that: described sidewall thermal insulation layer is soft carpet veneer; Described bottom thermal insulation layer is for solidifying carpet veneer.