CN201614429U - Single crystal furnace device with upper-portion adiabatic material - Google Patents
Single crystal furnace device with upper-portion adiabatic material Download PDFInfo
- Publication number
- CN201614429U CN201614429U CN2010201182057U CN201020118205U CN201614429U CN 201614429 U CN201614429 U CN 201614429U CN 2010201182057 U CN2010201182057 U CN 2010201182057U CN 201020118205 U CN201020118205 U CN 201020118205U CN 201614429 U CN201614429 U CN 201614429U
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- single crystal
- quartz crucible
- furnace device
- insulation material
- crystal furnace
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a silicon single crystal manufacturing device, in particular to a single crystal furnace device with an upper-portion adiabatic material. A quartz crucible is arranged inside a single crystal furnace; silicon materials are arranged inside the quartz crucible; a heater for melting the silicon materials is arranged on the periphery of the quartz crucible; a heat shield is arranged on the upper portion of the quartz crucible; the heat shield is arranged inside a casing of the single crystal furnace device through a support; and the upper-portion adiabatic material is arranged at the connecting position of the heat shield and the support.
Description
Technical field
The utility model relates to a kind of apparatus for manufacturing silicone single crystals, particularly relates to a kind of single crystal furnace device.
Background technology
Silicon single crystal is generally used the CZ manufactured.The CZ method refers to quartz crucible is set in single crystal growing furnace, and the silicon material packed in the quartz crucible, dependence is installed in quartz crucible well heater on every side and makes the fusing of silicon material again, the back enters liquation to the seed crystal that is installed on the seed chuck, and the mutual reverse by seed chuck and quartz crucible and then produce specified diameter and the single crystal rod of length.At this moment, in order to cover the heat of liquation, the heat shielding around single crystal rod is set above quartz crucible.
See also Fig. 1, existing single crystal furnace device generally includes heat shielding.This heat shielding 13 can be made up of heat shielding cover 21 and heat insulation material 22.Heat insulation material 22 is around the single crystal rod in the crystal pulling 11, and the periphery of heat insulation material 22 can all be covered by heat shielding cover 21, also can be that the periphery and the interior week of heat insulation material 22 all covered by heat shielding cover 21.Heat shielding 13 is positioned at the top of quartz crucible 12.
Though the heat shielding 12 around single crystal rod 11 is set above quartz crucible 12, can cover the heat of liquation to a certain extent,, heat shielding 12 is arranged on the supporter, and at the place that interconnects of heat shielding 12 and supporter, the heat of liquation is easy to scatter from here.
The utility model content
The purpose of this utility model is to provide a kind of single crystal furnace device, in the place that interconnects of heat shielding and supporter, the technical problem that the heat of liquation is easy to scatter from here.
A kind of single crystal furnace device with top heat insulation material, quartz crucible is set in single crystal growing furnace, and with in the silicon material installing quartz crucible, and a well heater that the silicon material is melted is set around quartz crucible, top at quartz crucible is provided with heat shielding, heat shielding is to be arranged in the shell of single crystal furnace device by supporter, and a top heat insulation material is set at the place of interconnecting of heat shielding and supporter.
The top heat insulation material can be ring-type.
Supporter is provided with boss, and the top of heat shielding directly is placed on this boss, and described top heat insulation material is arranged on the top of heat shielding.
Description of drawings
Fig. 1 is the embodiment synoptic diagram of existing single crystal furnace device;
Fig. 2 is the embodiment synoptic diagram of the utility model single crystal furnace device.
Embodiment
Below in conjunction with accompanying drawing, further specify the utility model.
Embodiment
See also Fig. 2, it is a kind of structural representation with single crystal furnace device of top heat insulation material.Quartz crucible 12 is set in single crystal growing furnace 17, and with in the silicon material 14 installing quartz crucibles 12, and a well heater 15 that the silicon material is melted is set around quartz crucible 12, on the top of quartz crucible 12 heat shielding 13 is set, heat shielding 13 is to be arranged in the shell of single crystal furnace device by supporter 16, in the junction of heat shielding 13 and supporter 16 a top heat insulation material 21 is set.
In example, top heat insulation material 21 is a ring-type.
The material of top heat insulation material 21 is graphite or C/C matrix material.
The utility model has obtained following result by experiment.
95kg feeds, when drawing the crystal bar of 6.5 inches of diameters, uses heat shielding of the present utility model, average pull rate was increased to 1.4mm/min by former 0.95mm/min has realized that high speed crystal pulling, crystal pulling time shorten 8.7 hours.Power consumption during crystal pulling has reduced by 35%.
Claims (3)
1. single crystal furnace device with top heat insulation material, quartz crucible is set in single crystal growing furnace, and with in the silicon material installing quartz crucible, and a well heater that the silicon material is melted is set around quartz crucible, top at quartz crucible is provided with heat shielding, heat shielding is to be arranged in the shell of single crystal furnace device by supporter, it is characterized in that, a top heat insulation material is set in the junction of heat shielding and supporter.
2. the single crystal furnace device with top heat insulation material as claimed in claim 1 is characterized in that, the top heat insulation material is a ring-type.
3. the single crystal furnace device with top heat insulation material as claimed in claim 1 is characterized in that supporter is provided with boss, and set up on this boss on the top of heat shielding, and described top heat insulation material is arranged on the top of heat shielding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201182057U CN201614429U (en) | 2010-02-25 | 2010-02-25 | Single crystal furnace device with upper-portion adiabatic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201182057U CN201614429U (en) | 2010-02-25 | 2010-02-25 | Single crystal furnace device with upper-portion adiabatic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201614429U true CN201614429U (en) | 2010-10-27 |
Family
ID=43000800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201182057U Expired - Fee Related CN201614429U (en) | 2010-02-25 | 2010-02-25 | Single crystal furnace device with upper-portion adiabatic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201614429U (en) |
-
2010
- 2010-02-25 CN CN2010201182057U patent/CN201614429U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI SHENHE THERMO-MAGENETIC ELECTRONIC CO., L |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20101124 Address after: 200444 No. 188, Lian Lian Road, Baoshan City Industrial Park, Shanghai, China Co-patentee after: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. Patentee after: Shanghai Thermo-magenetic Electronic Co., Ltd. Address before: 200444 No. 188, Lian Lian Road, Baoshan City Industrial Park, Shanghai, China Patentee before: Shanghai Thermo-magenetic Electronic Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101027 Termination date: 20190225 |