CN105683424B - 单晶硅制造方法 - Google Patents

单晶硅制造方法 Download PDF

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Publication number
CN105683424B
CN105683424B CN201480059891.6A CN201480059891A CN105683424B CN 105683424 B CN105683424 B CN 105683424B CN 201480059891 A CN201480059891 A CN 201480059891A CN 105683424 B CN105683424 B CN 105683424B
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China
Prior art keywords
crystal
oxygen concentration
diameter
flow velocity
inert gas
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CN201480059891.6A
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English (en)
Chinese (zh)
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CN105683424A (zh
Inventor
田边美
田边一美
横山隆
金大基
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201480059891.6A 2013-11-05 2014-10-31 单晶硅制造方法 Active CN105683424B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013229088A JP6268936B2 (ja) 2013-11-05 2013-11-05 シリコン単結晶製造方法
JP2013-229088 2013-11-05
PCT/JP2014/005528 WO2015068370A1 (ja) 2013-11-05 2014-10-31 シリコン単結晶製造方法

Publications (2)

Publication Number Publication Date
CN105683424A CN105683424A (zh) 2016-06-15
CN105683424B true CN105683424B (zh) 2018-12-28

Family

ID=53041165

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480059891.6A Active CN105683424B (zh) 2013-11-05 2014-10-31 单晶硅制造方法

Country Status (7)

Country Link
US (1) US9903044B2 (enExample)
JP (1) JP6268936B2 (enExample)
KR (1) KR101787504B1 (enExample)
CN (1) CN105683424B (enExample)
DE (1) DE112014005069B4 (enExample)
TW (1) TWI593835B (enExample)
WO (1) WO2015068370A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101871059B1 (ko) * 2016-11-17 2018-07-20 에스케이실트론 주식회사 단결정 잉곳 성장장치
CN108505111B (zh) * 2017-02-27 2020-11-13 胜高股份有限公司 单晶的制造方法
JP6304424B1 (ja) 2017-04-05 2018-04-04 株式会社Sumco 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
JP6881214B2 (ja) * 2017-10-16 2021-06-02 株式会社Sumco シリコン単結晶の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330362A (en) * 1978-05-17 1982-05-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Device and process for pulling high-purity semiconductor rods from a melt
US5476065A (en) * 1993-01-28 1995-12-19 Mitsubishi Materials Silicon Corp. System for pulling-up monocrystal and method of exhausting silicon oxide
US5730799A (en) * 1993-05-31 1998-03-24 Sumitomo Sitix Corporation Device for producing single crystals
JP2000203985A (ja) * 1999-01-14 2000-07-25 Toshiba Ceramics Co Ltd シリコン単結晶引上装置およびこれを用いたシリコン単結晶の製造方法
US20020157600A1 (en) * 2000-02-28 2002-10-31 Izumi Fusegawa Method for preparing silicon single crystal and silicon single crystal
KR100558156B1 (ko) * 2003-10-31 2006-03-10 가부시키가이샤 섬코 실리콘 단결정의 육성 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4063904B2 (ja) * 1996-12-13 2008-03-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶の引き上げ方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330362A (en) * 1978-05-17 1982-05-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Device and process for pulling high-purity semiconductor rods from a melt
US5476065A (en) * 1993-01-28 1995-12-19 Mitsubishi Materials Silicon Corp. System for pulling-up monocrystal and method of exhausting silicon oxide
US5730799A (en) * 1993-05-31 1998-03-24 Sumitomo Sitix Corporation Device for producing single crystals
JP2000203985A (ja) * 1999-01-14 2000-07-25 Toshiba Ceramics Co Ltd シリコン単結晶引上装置およびこれを用いたシリコン単結晶の製造方法
US20020157600A1 (en) * 2000-02-28 2002-10-31 Izumi Fusegawa Method for preparing silicon single crystal and silicon single crystal
KR100558156B1 (ko) * 2003-10-31 2006-03-10 가부시키가이샤 섬코 실리콘 단결정의 육성 방법

Also Published As

Publication number Publication date
US9903044B2 (en) 2018-02-27
TW201534775A (zh) 2015-09-16
JP2015089854A (ja) 2015-05-11
US20160251774A1 (en) 2016-09-01
TWI593835B (zh) 2017-08-01
DE112014005069B4 (de) 2023-12-21
WO2015068370A1 (ja) 2015-05-14
KR20160075757A (ko) 2016-06-29
JP6268936B2 (ja) 2018-01-31
CN105683424A (zh) 2016-06-15
DE112014005069T5 (de) 2016-08-25
KR101787504B1 (ko) 2017-10-18

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