DE112014005069B4 - Silicium-Einkristall-Erzeugungsverfahren - Google Patents
Silicium-Einkristall-Erzeugungsverfahren Download PDFInfo
- Publication number
- DE112014005069B4 DE112014005069B4 DE112014005069.5T DE112014005069T DE112014005069B4 DE 112014005069 B4 DE112014005069 B4 DE 112014005069B4 DE 112014005069 T DE112014005069 T DE 112014005069T DE 112014005069 B4 DE112014005069 B4 DE 112014005069B4
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- single crystal
- gap
- oxygen concentration
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 338
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 106
- 239000010703 silicon Substances 0.000 title claims abstract description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 116
- 239000001301 oxygen Substances 0.000 claims abstract description 116
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 116
- 239000011261 inert gas Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 description 26
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000005096 rolling process Methods 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013229088A JP6268936B2 (ja) | 2013-11-05 | 2013-11-05 | シリコン単結晶製造方法 |
| JP2013-229088 | 2013-11-05 | ||
| PCT/JP2014/005528 WO2015068370A1 (ja) | 2013-11-05 | 2014-10-31 | シリコン単結晶製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112014005069T5 DE112014005069T5 (de) | 2016-08-25 |
| DE112014005069B4 true DE112014005069B4 (de) | 2023-12-21 |
Family
ID=53041165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112014005069.5T Active DE112014005069B4 (de) | 2013-11-05 | 2014-10-31 | Silicium-Einkristall-Erzeugungsverfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9903044B2 (enExample) |
| JP (1) | JP6268936B2 (enExample) |
| KR (1) | KR101787504B1 (enExample) |
| CN (1) | CN105683424B (enExample) |
| DE (1) | DE112014005069B4 (enExample) |
| TW (1) | TWI593835B (enExample) |
| WO (1) | WO2015068370A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101871059B1 (ko) * | 2016-11-17 | 2018-07-20 | 에스케이실트론 주식회사 | 단결정 잉곳 성장장치 |
| CN108505111B (zh) * | 2017-02-27 | 2020-11-13 | 胜高股份有限公司 | 单晶的制造方法 |
| JP6304424B1 (ja) | 2017-04-05 | 2018-04-04 | 株式会社Sumco | 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法 |
| JP6881214B2 (ja) * | 2017-10-16 | 2021-06-02 | 株式会社Sumco | シリコン単結晶の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5476065A (en) | 1993-01-28 | 1995-12-19 | Mitsubishi Materials Silicon Corp. | System for pulling-up monocrystal and method of exhausting silicon oxide |
| US5730799A (en) | 1993-05-31 | 1998-03-24 | Sumitomo Sitix Corporation | Device for producing single crystals |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
| JP4063904B2 (ja) * | 1996-12-13 | 2008-03-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶の引き上げ方法 |
| JP3670504B2 (ja) * | 1999-01-14 | 2005-07-13 | 東芝セラミックス株式会社 | シリコン単結晶製造方法 |
| TW554093B (en) * | 2000-02-28 | 2003-09-21 | Shinetsu Handotai Kk | Method for preparing silicon single crystal and silicon single crystal |
| KR100558156B1 (ko) | 2003-10-31 | 2006-03-10 | 가부시키가이샤 섬코 | 실리콘 단결정의 육성 방법 |
-
2013
- 2013-11-05 JP JP2013229088A patent/JP6268936B2/ja active Active
-
2014
- 2014-10-08 TW TW103134996A patent/TWI593835B/zh active
- 2014-10-31 KR KR1020167014130A patent/KR101787504B1/ko active Active
- 2014-10-31 WO PCT/JP2014/005528 patent/WO2015068370A1/ja not_active Ceased
- 2014-10-31 US US15/030,706 patent/US9903044B2/en active Active
- 2014-10-31 CN CN201480059891.6A patent/CN105683424B/zh active Active
- 2014-10-31 DE DE112014005069.5T patent/DE112014005069B4/de active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5476065A (en) | 1993-01-28 | 1995-12-19 | Mitsubishi Materials Silicon Corp. | System for pulling-up monocrystal and method of exhausting silicon oxide |
| US5730799A (en) | 1993-05-31 | 1998-03-24 | Sumitomo Sitix Corporation | Device for producing single crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160075757A (ko) | 2016-06-29 |
| CN105683424A (zh) | 2016-06-15 |
| TW201534775A (zh) | 2015-09-16 |
| JP6268936B2 (ja) | 2018-01-31 |
| CN105683424B (zh) | 2018-12-28 |
| US20160251774A1 (en) | 2016-09-01 |
| DE112014005069T5 (de) | 2016-08-25 |
| TWI593835B (zh) | 2017-08-01 |
| KR101787504B1 (ko) | 2017-10-18 |
| JP2015089854A (ja) | 2015-05-11 |
| WO2015068370A1 (ja) | 2015-05-14 |
| US9903044B2 (en) | 2018-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: C30B0029060000 Ipc: C30B0015200000 |
|
| R016 | Response to examination communication | ||
| R016 | Response to examination communication | ||
| R016 | Response to examination communication | ||
| R018 | Grant decision by examination section/examining division | ||
| R020 | Patent grant now final |