JP6415604B2 - 本体貫通ビアライナの堆積 - Google Patents
本体貫通ビアライナの堆積 Download PDFInfo
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- JP6415604B2 JP6415604B2 JP2016568861A JP2016568861A JP6415604B2 JP 6415604 B2 JP6415604 B2 JP 6415604B2 JP 2016568861 A JP2016568861 A JP 2016568861A JP 2016568861 A JP2016568861 A JP 2016568861A JP 6415604 B2 JP6415604 B2 JP 6415604B2
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- Prior art keywords
- oxide
- insulating layers
- integrated circuit
- silicon
- semiconductor structure
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- 230000008021 deposition Effects 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 20
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 8
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- NSXCBNDGHHHVKT-UHFFFAOYSA-N [Ti].[Sr].[Ba] Chemical compound [Ti].[Sr].[Ba] NSXCBNDGHHHVKT-UHFFFAOYSA-N 0.000 claims description 6
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- XWCMFHPRATWWFO-UHFFFAOYSA-N [O-2].[Ta+5].[Sc+3].[O-2].[O-2].[O-2] Chemical compound [O-2].[Ta+5].[Sc+3].[O-2].[O-2].[O-2] XWCMFHPRATWWFO-UHFFFAOYSA-N 0.000 claims description 5
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- FAUIDPFKEVQLLR-UHFFFAOYSA-N [O-2].[Zr+4].[Si+4].[O-2].[O-2].[O-2] Chemical compound [O-2].[Zr+4].[Si+4].[O-2].[O-2].[O-2] FAUIDPFKEVQLLR-UHFFFAOYSA-N 0.000 claims description 4
- BOIGHUSRADNYQR-UHFFFAOYSA-N aluminum;lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[La+3] BOIGHUSRADNYQR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
- 238000004891 communication Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 10
- 230000006835 compression Effects 0.000 description 8
- 238000007906 compression Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000015654 memory Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXNDALNSUJQINT-UHFFFAOYSA-N [Sc].[Ta] Chemical compound [Sc].[Ta] PXNDALNSUJQINT-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- UVGLBOPDEUYYCS-UHFFFAOYSA-N silicon zirconium Chemical compound [Si].[Zr] UVGLBOPDEUYYCS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/05025—Disposition the internal layer being disposed on a via connection of the semiconductor or solid-state body
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
・引張酸化物、圧縮酸化物、引張酸化物、圧縮酸化物
・引張酸化物、圧縮窒化物、引張酸化物、圧縮窒化物
・圧縮酸化物、引張酸化物、圧縮酸化物、引張酸化物
・圧縮窒化物、引張酸化物、圧縮窒化物、引張酸化物
これらの構造を形成するための例示的処理が、図4を参照して説明される。
Claims (25)
- 半導体構造と、
前記半導体構造の少なくとも一部を貫通して延在する本体貫通ビアと、
前記半導体構造と前記本体貫通ビアとの間に配置されたライナと、を備え、
前記ライナは、複数の第2の絶縁層と交互する複数の第1の絶縁層を含み、前記複数の第2の絶縁層は、前記複数の第1の絶縁層とは材料又は堆積方法が異なり、
前記複数の第1の絶縁層の全ておよび前記複数の第2の絶縁層の全てのうち少なくとも1つは、ほぼ同じ厚さを有する、
集積回路。 - 前記複数の第1の絶縁層の少なくとも1つは、固有の引張応力を有し、前記複数の第2の絶縁層の少なくとも1つは、固有の圧縮応力を有する、請求項1に記載の集積回路。
- 前記複数の第1の絶縁層のうち1つは、前記半導体構造に隣接して配置され、前記複数の第2の絶縁層のうち1つは、前記本体貫通ビアに隣接して配置される、請求項1に記載の集積回路。
- 前記複数の第1の絶縁層の各々は、熱誘電体膜を含む、請求項1に記載の集積回路。
- 前記複数の第1の絶縁層または前記複数の第2の絶縁層の各々は、熱酸化膜を含む、請求項1に記載の集積回路。
- 前記複数の第1の絶縁層または前記複数の第2の絶縁層の各々は、プラズマ強化化学成長(PECVD)誘電膜を含む、請求項1に記載の集積回路。
- 前記複数の第1の絶縁層および前記複数の第2の絶縁層のうち少なくとも1つの各々は、酸化シリコン、窒化シリコン、炭化シリコン、炭素ドープ酸化物(CDO)、酸化物ドープ炭化物、酸化ハフニウム、酸化ハフニウムシリコン、酸化ランタン、酸化ランタンアルミニウム、酸化ジルコニウム、酸化ジルコニウムシリコン、酸化タンタル、酸化チタン、酸化バリウムストロンチウムチタン、酸化バリウムチタン、酸化ストロンチウムチタン、酸化イットリウム、酸化アルミニウム、および酸化鉛スカンジウムタンタルの少なくとも1つを含む、請求項1から6のいずれか一項に記載の集積回路。
- 前記複数の第1の絶縁層の各々は、酸化シリコンを含み、前記複数の第2の絶縁層の各々は、窒化シリコンを含む、請求項7に記載の集積回路。
- 前記本体貫通ビアの一端に隣接して配置されたランディングパッドを更に備え、前記ライナの一部は、前記ランディングパッドに隣接する、請求項1から6のいずれか一項に記載の集積回路。
- 前記半導体構造は、シリコンを含み、前記本体貫通ビアは、シリコン貫通ビア(TSV)である、請求項1から6のいずれか一項に記載の集積回路。
- 請求項1から6のいずれか一項に記載の集積回路を備える、3次元システムインパッケージデバイス。
- 集積回路を製造する方法であって、
半導体構造を設ける段階と、
前記半導体構造の少なくとも一部を貫通して本体貫通ビアを形成する段階と、
前記半導体構造と前記本体貫通ビアとの間に複数の第1の絶縁層および複数の第2の絶縁層の各々を交互に堆積させ、それによりライナを形成する段階と、を備え、
ほぼ同じ厚さを有する前記複数の第1の絶縁層の全ておよび前記複数の第2の絶縁層の全てのうち少なくとも1つを堆積させる段階を更に備え、
前記複数の第2の絶縁層は、前記複数の第1の絶縁層とは材料又は堆積方法が異なる、
方法。 - 前記複数の第1の絶縁層の少なくとも1つは、固有の引張応力を有し、前記複数の第2の絶縁層の少なくとも1つは、固有の圧縮応力を有する、請求項12に記載の方法。
- 引張応力を有するように、前記複数の第1の絶縁層の各々の堆積を調節する段階と、圧縮応力を有するように、前記複数の第2の絶縁層の各々の堆積を調節する段階と、を更に備える、請求項12または13に記載の方法。
- 前記半導体構造に隣接する前記複数の第1の絶縁層のうち1つを堆積させる段階と、前記本体貫通ビアに隣接する前記複数の第2の絶縁層のうち1つを堆積させる段階と、を更に備える、請求項12または13に記載の方法。
- 熱酸化工程を使用して前記複数の第1の絶縁層の各々を堆積させる段階を更に備える、請求項12または13に記載の方法。
- プラズマ強化化学成長(PECVD)工程を使用して、前記複数の第2の絶縁層の各々を堆積させる段階を更に備える、請求項12または13に記載の方法。
- 前記ライナの一部がランディングパッドに隣接するように、前記ランディングパッドを前記本体貫通ビアの一端に隣接して配置する段階を更に備える、請求項12または13に記載の方法。
- 前記半導体構造は、シリコンを含み、前記本体貫通ビアは、シリコン貫通ビア(TSV)である、請求項12または13に記載の方法。
- 前記複数の第1の絶縁層の各々は、酸化シリコン、窒化シリコン、炭化シリコン、炭素ドープ酸化物(CDO)、酸化物ドープ炭化物、酸化ハフニウム、酸化ハフニウムシリコン、酸化ランタン、酸化ランタンアルミニウム、酸化ジルコニウム、酸化ジルコニウムシリコン、酸化タンタル、酸化チタン、酸化バリウムストロンチウムチタン、酸化バリウムチタン、酸化ストロンチウムチタン、酸化イットリウム、酸化アルミニウム、および酸化鉛スカンジウムタンタルのうち少なくとも1つを含み、前記複数の第2の絶縁層の各々は、酸化シリコン、窒化シリコン、炭化シリコン、炭素ドープ酸化物(CDO)、酸化物ドープ炭化物、酸化ハフニウム、酸化ハフニウムシリコン、酸化ランタン、酸化ランタンアルミニウム、酸化ジルコニウム、酸化ジルコニウムシリコン、酸化タンタル、酸化チタン、酸化バリウムストロンチウムチタン、酸化バリウムチタン、酸化ストロンチウムチタン、酸化イットリウム、酸化アルミニウム、および酸化鉛スカンジウムタンタルのうち少なくとも1つを含む、請求項12または13に記載の方法。
- 前記複数の第1の絶縁層の各々は、酸化シリコンを含み、前記複数の第2の絶縁層の各々は、窒化シリコンを含む、請求項20に記載の方法。
- 半導体構造と、
基板の少なくとも一部を貫通して延在する本体貫通ビアと、
前記本体貫通ビアを前記基板から電気的に絶縁するためのライナと、を備える集積回路であって、
前記ライナは、複数の異なる材料の複数の交互する絶縁層を有し、
前記複数の交互する絶縁層の少なくとも2つは、ほぼ同じ厚さを有する、
集積回路。 - 前記複数の異なる材料は、似ていない固有の応力を有する、請求項22に記載の集積回路。
- 複数の前記絶縁層のうち少なくとも1つは、固有の引張応力を有し、前記複数の絶縁層の少なくとも別の1つは、固有の圧縮応力を有する、請求項22に記載の集積回路。
- 複数の前記絶縁層のうち1つは、前記半導体構造に隣接して配置され、前記複数の絶縁層のうち別の1つは、前記本体貫通ビアに隣接して配置される、請求項22から24のいずれか一項に記載の集積回路。
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