JP6412498B2 - 堆積プロセスの同期のための方法および装置 - Google Patents

堆積プロセスの同期のための方法および装置 Download PDF

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Publication number
JP6412498B2
JP6412498B2 JP2015526551A JP2015526551A JP6412498B2 JP 6412498 B2 JP6412498 B2 JP 6412498B2 JP 2015526551 A JP2015526551 A JP 2015526551A JP 2015526551 A JP2015526551 A JP 2015526551A JP 6412498 B2 JP6412498 B2 JP 6412498B2
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devices
chamber
control parameters
controller
substrate
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Japanese (ja)
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JP2015533928A (ja
JP2015533928A5 (https=
Inventor
ウィンザー ラム
ウィンザー ラム
キース エイ ミラー
キース エイ ミラー
カール ジョンソン
カール ジョンソン
マーティン リー ライカー
マーティン リー ライカー
イェ シュー
イェ シュー
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
JP2015526551A 2012-08-09 2013-07-18 堆積プロセスの同期のための方法および装置 Expired - Fee Related JP6412498B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/570,712 US20140046475A1 (en) 2012-08-09 2012-08-09 Method and apparatus deposition process synchronization
US13/570,712 2012-08-09
PCT/US2013/051017 WO2014025508A1 (en) 2012-08-09 2013-07-18 Method and apparatus deposition process synchronization

Publications (3)

Publication Number Publication Date
JP2015533928A JP2015533928A (ja) 2015-11-26
JP2015533928A5 JP2015533928A5 (https=) 2016-09-08
JP6412498B2 true JP6412498B2 (ja) 2018-10-24

Family

ID=50066787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015526551A Expired - Fee Related JP6412498B2 (ja) 2012-08-09 2013-07-18 堆積プロセスの同期のための方法および装置

Country Status (7)

Country Link
US (1) US20140046475A1 (https=)
EP (1) EP2883240B1 (https=)
JP (1) JP6412498B2 (https=)
KR (1) KR102108717B1 (https=)
CN (1) CN104520972B (https=)
TW (1) TWI600785B (https=)
WO (1) WO2014025508A1 (https=)

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JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP7572422B2 (ja) * 2019-07-29 2024-10-23 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバ及びそれを洗浄するための方法
CN110484884A (zh) * 2019-09-06 2019-11-22 北京北方华创微电子装备有限公司 磁控溅射控制系统及其控制方法
CN110643964B (zh) * 2019-09-24 2022-06-14 北京北方华创微电子装备有限公司 磁控溅射工艺中直流电源的控制方法、控制装置及系统
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
US11371148B2 (en) * 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US12581926B2 (en) * 2021-07-14 2026-03-17 Applied Materials Inc. Methods and apparatus for processing a substrate
US12412738B1 (en) 2024-10-30 2025-09-09 Applied Materials, Inc. System for target arcing mapping and plasma diagnosis

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Also Published As

Publication number Publication date
TW201406982A (zh) 2014-02-16
EP2883240A1 (en) 2015-06-17
JP2015533928A (ja) 2015-11-26
CN104520972A (zh) 2015-04-15
EP2883240A4 (en) 2016-04-27
EP2883240B1 (en) 2020-09-02
TWI600785B (zh) 2017-10-01
WO2014025508A1 (en) 2014-02-13
KR102108717B1 (ko) 2020-05-08
CN104520972B (zh) 2017-12-26
KR20150043389A (ko) 2015-04-22
US20140046475A1 (en) 2014-02-13

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