KR102108717B1 - 증착 프로세스 동기화를 위한 방법 및 장치 - Google Patents

증착 프로세스 동기화를 위한 방법 및 장치 Download PDF

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Publication number
KR102108717B1
KR102108717B1 KR1020157006118A KR20157006118A KR102108717B1 KR 102108717 B1 KR102108717 B1 KR 102108717B1 KR 1020157006118 A KR1020157006118 A KR 1020157006118A KR 20157006118 A KR20157006118 A KR 20157006118A KR 102108717 B1 KR102108717 B1 KR 102108717B1
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South Korea
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devices
chamber
substrate
control parameters
processing
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Korean (ko)
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KR20150043389A (ko
Inventor
윈저 람
케이스 에이. 밀러
칼 존슨
마틴 리 라이커
예 수
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B15/00—Systems controlled by a computer
    • G05B15/02—Systems controlled by a computer electric
    • H01L21/67011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
KR1020157006118A 2012-08-09 2013-07-18 증착 프로세스 동기화를 위한 방법 및 장치 Expired - Fee Related KR102108717B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/570,712 US20140046475A1 (en) 2012-08-09 2012-08-09 Method and apparatus deposition process synchronization
US13/570,712 2012-08-09
PCT/US2013/051017 WO2014025508A1 (en) 2012-08-09 2013-07-18 Method and apparatus deposition process synchronization

Publications (2)

Publication Number Publication Date
KR20150043389A KR20150043389A (ko) 2015-04-22
KR102108717B1 true KR102108717B1 (ko) 2020-05-08

Family

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KR1020157006118A Expired - Fee Related KR102108717B1 (ko) 2012-08-09 2013-07-18 증착 프로세스 동기화를 위한 방법 및 장치

Country Status (7)

Country Link
US (1) US20140046475A1 (https=)
EP (1) EP2883240B1 (https=)
JP (1) JP6412498B2 (https=)
KR (1) KR102108717B1 (https=)
CN (1) CN104520972B (https=)
TW (1) TWI600785B (https=)
WO (1) WO2014025508A1 (https=)

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US10312065B2 (en) * 2016-07-20 2019-06-04 Applied Materials, Inc. Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
TWI733850B (zh) * 2016-07-27 2021-07-21 美商應用材料股份有限公司 使用沉積/蝕刻技術之無接縫溝道填充
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP7572422B2 (ja) * 2019-07-29 2024-10-23 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバ及びそれを洗浄するための方法
CN110484884A (zh) * 2019-09-06 2019-11-22 北京北方华创微电子装备有限公司 磁控溅射控制系统及其控制方法
CN110643964B (zh) * 2019-09-24 2022-06-14 北京北方华创微电子装备有限公司 磁控溅射工艺中直流电源的控制方法、控制装置及系统
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
US11371148B2 (en) * 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US12581926B2 (en) * 2021-07-14 2026-03-17 Applied Materials Inc. Methods and apparatus for processing a substrate
US12412738B1 (en) 2024-10-30 2025-09-09 Applied Materials, Inc. System for target arcing mapping and plasma diagnosis

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US20030034244A1 (en) 2001-05-04 2003-02-20 Tugrul Yasar Ionized PVD with sequential deposition and etching
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
JP2011149093A (ja) * 2009-12-22 2011-08-04 Canon Anelva Corp スパッタリング装置及びスパッタリング成膜方法並びにスパッタリング装置の電源制御方法
JP2011214150A (ja) 2010-03-19 2011-10-27 Nanotec Corp 炭素膜の形成方法および装置
US20120070982A1 (en) 2010-09-21 2012-03-22 Applied Materials, Inc. Methods for forming layers on a substrate
US20120095599A1 (en) 2010-10-14 2012-04-19 Delta Tau Data Systems, Inc. Hybrid machine control incorporating fast-tool servos

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US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
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JP2004047885A (ja) * 2002-07-15 2004-02-12 Matsushita Electric Ind Co Ltd 半導体製造装置のモニタリングシステム及びモニタリング方法
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US20030034244A1 (en) 2001-05-04 2003-02-20 Tugrul Yasar Ionized PVD with sequential deposition and etching
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
JP2011149093A (ja) * 2009-12-22 2011-08-04 Canon Anelva Corp スパッタリング装置及びスパッタリング成膜方法並びにスパッタリング装置の電源制御方法
JP2011214150A (ja) 2010-03-19 2011-10-27 Nanotec Corp 炭素膜の形成方法および装置
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US20120095599A1 (en) 2010-10-14 2012-04-19 Delta Tau Data Systems, Inc. Hybrid machine control incorporating fast-tool servos

Also Published As

Publication number Publication date
TW201406982A (zh) 2014-02-16
EP2883240A1 (en) 2015-06-17
JP2015533928A (ja) 2015-11-26
JP6412498B2 (ja) 2018-10-24
CN104520972A (zh) 2015-04-15
EP2883240A4 (en) 2016-04-27
EP2883240B1 (en) 2020-09-02
TWI600785B (zh) 2017-10-01
WO2014025508A1 (en) 2014-02-13
CN104520972B (zh) 2017-12-26
KR20150043389A (ko) 2015-04-22
US20140046475A1 (en) 2014-02-13

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