TWI600785B - 沉積製程同步化之方法及設備 - Google Patents

沉積製程同步化之方法及設備 Download PDF

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Publication number
TWI600785B
TWI600785B TW102126141A TW102126141A TWI600785B TW I600785 B TWI600785 B TW I600785B TW 102126141 A TW102126141 A TW 102126141A TW 102126141 A TW102126141 A TW 102126141A TW I600785 B TWI600785 B TW I600785B
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TW
Taiwan
Prior art keywords
devices
chamber
substrate
process control
controller
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Application number
TW102126141A
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English (en)
Chinese (zh)
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TW201406982A (zh
Inventor
梁溫壽
米勒凱斯Ａ
強森卡羅
萊克馬丁李
徐瞱
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應用材料股份有限公司
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Publication of TW201406982A publication Critical patent/TW201406982A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
TW102126141A 2012-08-09 2013-07-22 沉積製程同步化之方法及設備 TWI600785B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/570,712 US20140046475A1 (en) 2012-08-09 2012-08-09 Method and apparatus deposition process synchronization

Publications (2)

Publication Number Publication Date
TW201406982A TW201406982A (zh) 2014-02-16
TWI600785B true TWI600785B (zh) 2017-10-01

Family

ID=50066787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102126141A TWI600785B (zh) 2012-08-09 2013-07-22 沉積製程同步化之方法及設備

Country Status (7)

Country Link
US (1) US20140046475A1 (https=)
EP (1) EP2883240B1 (https=)
JP (1) JP6412498B2 (https=)
KR (1) KR102108717B1 (https=)
CN (1) CN104520972B (https=)
TW (1) TWI600785B (https=)
WO (1) WO2014025508A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3197022A1 (en) * 2016-01-20 2017-07-26 Siemens Aktiengesellschaft Method for producing a can for an electric motor
US10312065B2 (en) * 2016-07-20 2019-06-04 Applied Materials, Inc. Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
TWI733850B (zh) * 2016-07-27 2021-07-21 美商應用材料股份有限公司 使用沉積/蝕刻技術之無接縫溝道填充
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP7572422B2 (ja) * 2019-07-29 2024-10-23 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバ及びそれを洗浄するための方法
CN110484884A (zh) * 2019-09-06 2019-11-22 北京北方华创微电子装备有限公司 磁控溅射控制系统及其控制方法
CN110643964B (zh) * 2019-09-24 2022-06-14 北京北方华创微电子装备有限公司 磁控溅射工艺中直流电源的控制方法、控制装置及系统
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
US11371148B2 (en) * 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US12581926B2 (en) * 2021-07-14 2026-03-17 Applied Materials Inc. Methods and apparatus for processing a substrate
US12412738B1 (en) 2024-10-30 2025-09-09 Applied Materials, Inc. System for target arcing mapping and plasma diagnosis

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
US6794301B2 (en) * 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US20120070982A1 (en) * 2010-09-21 2012-03-22 Applied Materials, Inc. Methods for forming layers on a substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
KR100375333B1 (ko) * 2001-01-31 2003-03-06 한국과학기술연구원 단일 소스를 이용한 코팅과 표면 처리 장치 및 방법
US20020117399A1 (en) * 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
KR100878103B1 (ko) * 2001-05-04 2009-01-14 도쿄엘렉트론가부시키가이샤 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ
JP2004047885A (ja) * 2002-07-15 2004-02-12 Matsushita Electric Ind Co Ltd 半導体製造装置のモニタリングシステム及びモニタリング方法
JP2005026390A (ja) * 2003-07-01 2005-01-27 Toshiba Microelectronics Corp 半導体集積回路装置の信号配線接続方法、信号配線接続システム、および半導体集積回路装置の製造方法
JP4390568B2 (ja) * 2004-01-19 2009-12-24 富士通株式会社 遅延測定システム
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US7071095B2 (en) * 2004-05-20 2006-07-04 Taiwan Semiconductor Manufacturing Company Barrier metal re-distribution process for resistivity reduction
DE102007004860B4 (de) * 2007-01-31 2008-11-06 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Kupfer-basierten Metallisierungsschicht mit einer leitenden Deckschicht durch ein verbessertes Integrationsschema
KR20080111627A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
JP4607930B2 (ja) * 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
US20100067604A1 (en) * 2008-09-17 2010-03-18 Texas Instruments Incorporated Network multiple antenna transmission employing an x2 interface
JP5649426B2 (ja) * 2009-12-22 2015-01-07 キヤノンアネルバ株式会社 スパッタリング装置及びスパッタリング成膜方法並びにスパッタリング装置の電源制御方法
JP5839318B2 (ja) * 2010-03-19 2016-01-06 ナノテック株式会社 炭素膜の形成方法、炭素膜の形成装置、及び炭素膜
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US8392002B2 (en) * 2010-10-14 2013-03-05 Delta Tau Data Systems, Inc. Hybrid machine control incorporating fast-tool servos
US8779662B2 (en) * 2010-10-20 2014-07-15 Comet Technologies Usa, Inc Pulse mode capability for operation of an RF/VHF impedance matching network with 4 quadrant, VRMS/IRMS responding detector circuitry
US8440473B2 (en) * 2011-06-06 2013-05-14 Lam Research Corporation Use of spectrum to synchronize RF switching with gas switching during etch
US9147620B2 (en) * 2012-03-28 2015-09-29 Teradyne, Inc. Edge triggered calibration

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794301B2 (en) * 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
US20120070982A1 (en) * 2010-09-21 2012-03-22 Applied Materials, Inc. Methods for forming layers on a substrate

Also Published As

Publication number Publication date
TW201406982A (zh) 2014-02-16
EP2883240A1 (en) 2015-06-17
JP2015533928A (ja) 2015-11-26
JP6412498B2 (ja) 2018-10-24
CN104520972A (zh) 2015-04-15
EP2883240A4 (en) 2016-04-27
EP2883240B1 (en) 2020-09-02
WO2014025508A1 (en) 2014-02-13
KR102108717B1 (ko) 2020-05-08
CN104520972B (zh) 2017-12-26
KR20150043389A (ko) 2015-04-22
US20140046475A1 (en) 2014-02-13

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