JP2015533928A5 - - Google Patents

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Publication number
JP2015533928A5
JP2015533928A5 JP2015526551A JP2015526551A JP2015533928A5 JP 2015533928 A5 JP2015533928 A5 JP 2015533928A5 JP 2015526551 A JP2015526551 A JP 2015526551A JP 2015526551 A JP2015526551 A JP 2015526551A JP 2015533928 A5 JP2015533928 A5 JP 2015533928A5
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JP
Japan
Prior art keywords
devices
control parameters
chamber
controller
features
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Application number
JP2015526551A
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English (en)
Japanese (ja)
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JP2015533928A (ja
JP6412498B2 (ja
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Priority claimed from US13/570,712 external-priority patent/US20140046475A1/en
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Publication of JP2015533928A publication Critical patent/JP2015533928A/ja
Publication of JP2015533928A5 publication Critical patent/JP2015533928A5/ja
Application granted granted Critical
Publication of JP6412498B2 publication Critical patent/JP6412498B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015526551A 2012-08-09 2013-07-18 堆積プロセスの同期のための方法および装置 Expired - Fee Related JP6412498B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/570,712 US20140046475A1 (en) 2012-08-09 2012-08-09 Method and apparatus deposition process synchronization
US13/570,712 2012-08-09
PCT/US2013/051017 WO2014025508A1 (en) 2012-08-09 2013-07-18 Method and apparatus deposition process synchronization

Publications (3)

Publication Number Publication Date
JP2015533928A JP2015533928A (ja) 2015-11-26
JP2015533928A5 true JP2015533928A5 (https=) 2016-09-08
JP6412498B2 JP6412498B2 (ja) 2018-10-24

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ID=50066787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015526551A Expired - Fee Related JP6412498B2 (ja) 2012-08-09 2013-07-18 堆積プロセスの同期のための方法および装置

Country Status (7)

Country Link
US (1) US20140046475A1 (https=)
EP (1) EP2883240B1 (https=)
JP (1) JP6412498B2 (https=)
KR (1) KR102108717B1 (https=)
CN (1) CN104520972B (https=)
TW (1) TWI600785B (https=)
WO (1) WO2014025508A1 (https=)

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EP3197022A1 (en) * 2016-01-20 2017-07-26 Siemens Aktiengesellschaft Method for producing a can for an electric motor
US10312065B2 (en) * 2016-07-20 2019-06-04 Applied Materials, Inc. Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
TWI733850B (zh) * 2016-07-27 2021-07-21 美商應用材料股份有限公司 使用沉積/蝕刻技術之無接縫溝道填充
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP7572422B2 (ja) * 2019-07-29 2024-10-23 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバ及びそれを洗浄するための方法
CN110484884A (zh) * 2019-09-06 2019-11-22 北京北方华创微电子装备有限公司 磁控溅射控制系统及其控制方法
CN110643964B (zh) * 2019-09-24 2022-06-14 北京北方华创微电子装备有限公司 磁控溅射工艺中直流电源的控制方法、控制装置及系统
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
US11371148B2 (en) * 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US12581926B2 (en) * 2021-07-14 2026-03-17 Applied Materials Inc. Methods and apparatus for processing a substrate
US12412738B1 (en) 2024-10-30 2025-09-09 Applied Materials, Inc. System for target arcing mapping and plasma diagnosis

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US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
KR100375333B1 (ko) * 2001-01-31 2003-03-06 한국과학기술연구원 단일 소스를 이용한 코팅과 표면 처리 장치 및 방법
US20020117399A1 (en) * 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
KR100878103B1 (ko) * 2001-05-04 2009-01-14 도쿄엘렉트론가부시키가이샤 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ
JP2004047885A (ja) * 2002-07-15 2004-02-12 Matsushita Electric Ind Co Ltd 半導体製造装置のモニタリングシステム及びモニタリング方法
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JP2005026390A (ja) * 2003-07-01 2005-01-27 Toshiba Microelectronics Corp 半導体集積回路装置の信号配線接続方法、信号配線接続システム、および半導体集積回路装置の製造方法
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JP5839318B2 (ja) * 2010-03-19 2016-01-06 ナノテック株式会社 炭素膜の形成方法、炭素膜の形成装置、及び炭素膜
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