JP6406201B2 - 基板処理装置、基板処理方法及び記憶媒体 - Google Patents

基板処理装置、基板処理方法及び記憶媒体 Download PDF

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Publication number
JP6406201B2
JP6406201B2 JP2015196855A JP2015196855A JP6406201B2 JP 6406201 B2 JP6406201 B2 JP 6406201B2 JP 2015196855 A JP2015196855 A JP 2015196855A JP 2015196855 A JP2015196855 A JP 2015196855A JP 6406201 B2 JP6406201 B2 JP 6406201B2
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substrate
wafer
eddy current
mounting table
distance
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Japanese (ja)
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JP2017069517A5 (enrdf_load_stackoverflow
JP2017069517A (ja
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哲夫 福岡
哲夫 福岡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020160124619A priority patent/KR102586622B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2015196855A 2015-10-02 2015-10-02 基板処理装置、基板処理方法及び記憶媒体 Active JP6406201B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015196855A JP6406201B2 (ja) 2015-10-02 2015-10-02 基板処理装置、基板処理方法及び記憶媒体
KR1020160124619A KR102586622B1 (ko) 2015-10-02 2016-09-28 기판 처리 장치, 기판 처리 방법 및 기억 매체

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Application Number Priority Date Filing Date Title
JP2015196855A JP6406201B2 (ja) 2015-10-02 2015-10-02 基板処理装置、基板処理方法及び記憶媒体

Publications (3)

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JP2017069517A JP2017069517A (ja) 2017-04-06
JP2017069517A5 JP2017069517A5 (enrdf_load_stackoverflow) 2017-09-14
JP6406201B2 true JP6406201B2 (ja) 2018-10-17

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JP (1) JP6406201B2 (enrdf_load_stackoverflow)
KR (1) KR102586622B1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI837773B (zh) * 2017-06-28 2024-04-01 日商東京威力科創股份有限公司 熱處理裝置之狀態監視裝置、熱處理裝置之管理方法及記錄媒體
JP2020035834A (ja) * 2018-08-28 2020-03-05 キオクシア株式会社 加熱処理装置および加熱処理方法
JP7281901B2 (ja) * 2018-12-27 2023-05-26 東京エレクトロン株式会社 基板処理装置、および基板処理方法
CN113206019B (zh) * 2021-04-08 2022-10-21 北京北方华创微电子装备有限公司 一种用于检测晶圆的翘曲度的装置及检测方法
CN117512544A (zh) * 2024-01-05 2024-02-06 上海陛通半导体能源科技股份有限公司 Pvd磁控溅射镀膜设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3374467B2 (ja) * 1993-09-14 2003-02-04 株式会社ニコン 投影露光装置及び露光方法
JPH11195579A (ja) * 1997-12-26 1999-07-21 Nikon Corp 露光装置及び露光方法
JP3284121B2 (ja) * 2000-02-25 2002-05-20 株式会社東芝 レジスト塗布方法、レジストパターン形成方法及び溶液供給装置
JP3708786B2 (ja) * 2000-03-27 2005-10-19 株式会社東芝 レジストパターン形成方法及び半導体製造システム
JP4976322B2 (ja) * 2002-09-20 2012-07-18 東京エレクトロン株式会社 塗布方法及び塗布装置
JP2005024317A (ja) * 2003-06-30 2005-01-27 Nikon Corp ステージ位置検出装置及び露光装置
JP4572539B2 (ja) * 2004-01-19 2010-11-04 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
US7221269B2 (en) 2004-10-29 2007-05-22 Kimberly-Clark Worldwide, Inc. Self-adjusting portals with movable data tag readers for improved reading of data tags
JP4587170B2 (ja) * 2005-01-20 2010-11-24 キヤノン株式会社 露光装置及びデバイスの製造方法
JP4738033B2 (ja) 2005-03-23 2011-08-03 大日本スクリーン製造株式会社 基板処理装置
JP4606355B2 (ja) * 2006-03-14 2011-01-05 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
JP2008182057A (ja) * 2007-01-25 2008-08-07 Nikon Corp 露光装置
JP4826544B2 (ja) * 2007-05-23 2011-11-30 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
JP2009123816A (ja) 2007-11-13 2009-06-04 Sokudo:Kk 熱処理装置および熱処理方法
JP5417655B2 (ja) * 2008-12-16 2014-02-19 株式会社アドウェルズ 傾き調整方法および傾き調整装置並びにその傾き調整方法において調整されるデバイス
US9281226B2 (en) * 2012-04-26 2016-03-08 Applied Materials, Inc. Electrostatic chuck having reduced power loss
JP6145334B2 (ja) * 2013-06-28 2017-06-07 株式会社荏原製作所 基板処理装置
JP6230887B2 (ja) * 2013-11-29 2017-11-15 住友化学株式会社 半導体評価装置、半導体ウェハの評価方法および半導体ウェハの製造方法

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Publication number Publication date
KR102586622B1 (ko) 2023-10-11
JP2017069517A (ja) 2017-04-06
KR20170040100A (ko) 2017-04-12

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