JP6359892B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6359892B2
JP6359892B2 JP2014131751A JP2014131751A JP6359892B2 JP 6359892 B2 JP6359892 B2 JP 6359892B2 JP 2014131751 A JP2014131751 A JP 2014131751A JP 2014131751 A JP2014131751 A JP 2014131751A JP 6359892 B2 JP6359892 B2 JP 6359892B2
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JP
Japan
Prior art keywords
layer
oxide semiconductor
transistor
oxide
film
Prior art date
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Active
Application number
JP2014131751A
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English (en)
Japanese (ja)
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JP2015029087A (ja
JP2015029087A5 (enExample
Inventor
桑原　秀明
秀明 桑原
佑太 遠藤
佑太 遠藤
真理 立石
真理 立石
高橋　正弘
正弘 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014131751A priority Critical patent/JP6359892B2/ja
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Publication of JP2015029087A5 publication Critical patent/JP2015029087A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
JP2014131751A 2013-06-28 2014-06-26 半導体装置 Active JP6359892B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014131751A JP6359892B2 (ja) 2013-06-28 2014-06-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013136451 2013-06-28
JP2013136451 2013-06-28
JP2014131751A JP6359892B2 (ja) 2013-06-28 2014-06-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018117778A Division JP6602918B2 (ja) 2013-06-28 2018-06-21 半導体装置及びトランジスタ

Publications (3)

Publication Number Publication Date
JP2015029087A JP2015029087A (ja) 2015-02-12
JP2015029087A5 JP2015029087A5 (enExample) 2017-08-03
JP6359892B2 true JP6359892B2 (ja) 2018-07-18

Family

ID=52114715

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2014131751A Active JP6359892B2 (ja) 2013-06-28 2014-06-26 半導体装置
JP2018117778A Active JP6602918B2 (ja) 2013-06-28 2018-06-21 半導体装置及びトランジスタ
JP2019163533A Active JP6852133B2 (ja) 2013-06-28 2019-09-09 表示装置
JP2021037947A Active JP7052110B2 (ja) 2013-06-28 2021-03-10 表示装置
JP2022056834A Active JP7392024B2 (ja) 2013-06-28 2022-03-30 半導体装置
JP2023198273A Withdrawn JP2024019204A (ja) 2013-06-28 2023-11-22 半導体装置
JP2025115048A Pending JP2025137548A (ja) 2013-06-28 2025-07-08 半導体装置

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2018117778A Active JP6602918B2 (ja) 2013-06-28 2018-06-21 半導体装置及びトランジスタ
JP2019163533A Active JP6852133B2 (ja) 2013-06-28 2019-09-09 表示装置
JP2021037947A Active JP7052110B2 (ja) 2013-06-28 2021-03-10 表示装置
JP2022056834A Active JP7392024B2 (ja) 2013-06-28 2022-03-30 半導体装置
JP2023198273A Withdrawn JP2024019204A (ja) 2013-06-28 2023-11-22 半導体装置
JP2025115048A Pending JP2025137548A (ja) 2013-06-28 2025-07-08 半導体装置

Country Status (3)

Country Link
US (1) US20150001533A1 (enExample)
JP (7) JP6359892B2 (enExample)
KR (1) KR20150002500A (enExample)

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US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105140271B (zh) * 2015-07-16 2019-03-26 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制造方法及显示装置
CN105097557A (zh) * 2015-09-25 2015-11-25 深圳市华星光电技术有限公司 一种tft基板、tft开关管及其制造方法
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
WO2017178912A1 (en) * 2016-04-13 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
CN109075209B (zh) 2016-05-20 2022-05-27 株式会社半导体能源研究所 半导体装置或包括该半导体装置的显示装置
KR102384624B1 (ko) * 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW202129966A (zh) * 2016-10-21 2021-08-01 日商半導體能源研究所股份有限公司 複合氧化物及電晶體
CN108022937B (zh) * 2016-10-31 2021-10-01 乐金显示有限公司 具有双层氧化物半导体的薄膜晶体管基板
KR102329159B1 (ko) * 2016-10-31 2021-11-23 엘지디스플레이 주식회사 이중층 산화물 반도체 물질을 구비한 박막 트랜지스터 기판
US11838613B2 (en) * 2017-04-27 2023-12-05 Allied Vision Technologies Gmbh Method for capturing data
EP3561893B1 (en) 2018-04-26 2022-06-15 Canon Kabushiki Kaisha Organic device and method of manufacturing the same
US12040409B2 (en) 2021-02-09 2024-07-16 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a dielectric diffusion barrier and methods for forming the same
CN114695394A (zh) * 2022-03-29 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板和显示面板

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US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
KR20110056542A (ko) * 2008-09-12 2011-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI536577B (zh) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101472771B1 (ko) * 2008-12-01 2014-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI535023B (zh) * 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
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Also Published As

Publication number Publication date
KR20150002500A (ko) 2015-01-07
JP7052110B2 (ja) 2022-04-11
JP2018148237A (ja) 2018-09-20
JP6602918B2 (ja) 2019-11-06
JP7392024B2 (ja) 2023-12-05
JP6852133B2 (ja) 2021-03-31
JP2015029087A (ja) 2015-02-12
JP2022097483A (ja) 2022-06-30
JP2024019204A (ja) 2024-02-08
JP2020073954A (ja) 2020-05-14
US20150001533A1 (en) 2015-01-01
JP2021106275A (ja) 2021-07-26
JP2025137548A (ja) 2025-09-19

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