KR20150002500A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR20150002500A
KR20150002500A KR20140078066A KR20140078066A KR20150002500A KR 20150002500 A KR20150002500 A KR 20150002500A KR 20140078066 A KR20140078066 A KR 20140078066A KR 20140078066 A KR20140078066 A KR 20140078066A KR 20150002500 A KR20150002500 A KR 20150002500A
Authority
KR
South Korea
Prior art keywords
layer
oxide semiconductor
transistor
electrode layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR20140078066A
Other languages
English (en)
Korean (ko)
Inventor
히데아키 구와바라
유타 엔도
마리 다테이시
마사히로 다카하시
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20150002500A publication Critical patent/KR20150002500A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
KR20140078066A 2013-06-28 2014-06-25 반도체 장치 Withdrawn KR20150002500A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-136451 2013-06-28
JP2013136451 2013-06-28

Publications (1)

Publication Number Publication Date
KR20150002500A true KR20150002500A (ko) 2015-01-07

Family

ID=52114715

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140078066A Withdrawn KR20150002500A (ko) 2013-06-28 2014-06-25 반도체 장치

Country Status (3)

Country Link
US (1) US20150001533A1 (enExample)
JP (7) JP6359892B2 (enExample)
KR (1) KR20150002500A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180049780A (ko) * 2016-10-31 2018-05-11 엘지디스플레이 주식회사 이중층 산화물 반도체 물질을 구비한 박막 트랜지스터 기판
US10043660B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
US10374098B2 (en) 2016-10-21 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105140271B (zh) * 2015-07-16 2019-03-26 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制造方法及显示装置
CN105097557A (zh) * 2015-09-25 2015-11-25 深圳市华星光电技术有限公司 一种tft基板、tft开关管及其制造方法
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2017149413A1 (en) * 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
CN109075206B (zh) 2016-04-13 2022-08-16 株式会社半导体能源研究所 半导体装置及包括该半导体装置的显示装置
TWI715699B (zh) * 2016-10-21 2021-01-11 日商半導體能源硏究所股份有限公司 複合氧化物及電晶體
CN108022937B (zh) * 2016-10-31 2021-10-01 乐金显示有限公司 具有双层氧化物半导体的薄膜晶体管基板
ES2911193T3 (es) * 2017-04-27 2022-05-18 Allied Vision Tech Gmbh Dispositivo para la captura de datos
EP3561893B1 (en) 2018-04-26 2022-06-15 Canon Kabushiki Kaisha Organic device and method of manufacturing the same
US12040409B2 (en) 2021-02-09 2024-07-16 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a dielectric diffusion barrier and methods for forming the same
CN114695394A (zh) * 2022-03-29 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板和显示面板

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736443B2 (ja) * 1989-08-10 1995-04-19 インダストリアル テクノロジー リサーチ インスチチュート 反転共面薄膜トランジスタ及び製造法
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
JP2010040552A (ja) * 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法
CN102150191B (zh) * 2008-09-12 2013-07-24 株式会社半导体能源研究所 显示装置
TWI536577B (zh) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2010064590A1 (en) * 2008-12-01 2010-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI476917B (zh) * 2009-04-16 2015-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101944656B1 (ko) * 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101506124B1 (ko) 2009-09-04 2015-03-25 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
EP2478554B1 (en) * 2009-09-16 2016-06-08 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101914026B1 (ko) * 2009-09-24 2018-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
CN102549757A (zh) * 2009-09-30 2012-07-04 佳能株式会社 薄膜晶体管
KR101376461B1 (ko) * 2009-10-08 2014-03-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층 및 반도체 장치
KR101832698B1 (ko) * 2009-10-14 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5693070B2 (ja) * 2010-07-16 2015-04-01 キヤノン株式会社 動画編集装置及びその制御方法、プログラム、記憶媒体
KR101851817B1 (ko) * 2010-09-03 2018-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP5626978B2 (ja) * 2010-09-08 2014-11-19 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
DE112011106207B4 (de) 2010-12-03 2026-08-13 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
JP5490314B2 (ja) * 2011-04-18 2014-05-14 シャープ株式会社 薄膜トランジスタ、表示パネル及び薄膜トランジスタの製造方法
JP5832780B2 (ja) * 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法
US8869903B2 (en) * 2011-06-30 2014-10-28 Baker Hughes Incorporated Apparatus to remotely actuate valves and method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9048323B2 (en) * 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043660B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
US10580641B2 (en) 2016-05-20 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
US10374098B2 (en) 2016-10-21 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10777687B2 (en) 2016-10-21 2020-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180049780A (ko) * 2016-10-31 2018-05-11 엘지디스플레이 주식회사 이중층 산화물 반도체 물질을 구비한 박막 트랜지스터 기판

Also Published As

Publication number Publication date
JP7392024B2 (ja) 2023-12-05
JP6359892B2 (ja) 2018-07-18
JP2021106275A (ja) 2021-07-26
US20150001533A1 (en) 2015-01-01
JP2022097483A (ja) 2022-06-30
JP6852133B2 (ja) 2021-03-31
JP2024019204A (ja) 2024-02-08
JP7879985B2 (ja) 2026-06-24
JP6602918B2 (ja) 2019-11-06
JP2020073954A (ja) 2020-05-14
JP7052110B2 (ja) 2022-04-11
JP2015029087A (ja) 2015-02-12
JP2025137548A (ja) 2025-09-19
JP2018148237A (ja) 2018-09-20

Similar Documents

Publication Publication Date Title
JP7392024B2 (ja) 半導体装置
JP7288929B2 (ja) 半導体装置
JP6626941B2 (ja) 半導体装置
JP6402017B2 (ja) 半導体装置
JP6499426B2 (ja) 半導体装置
KR102546516B1 (ko) 반도체 장치의 제작 방법
JP6386323B2 (ja) 半導体装置
JP5886676B2 (ja) 半導体装置
US10615187B2 (en) Transistor, semiconductor device, and electronic device
JP6999325B2 (ja) 半導体装置
JP2016046527A (ja) 半導体装置とその作製方法、電子機器
US9305774B2 (en) Method for processing thin film and method for manufacturing semiconductor device
JP6378908B2 (ja) 半導体装置
JP6733015B2 (ja) 金属酸化物膜及び半導体装置
JP6553266B2 (ja) 金属酸化物膜及び半導体装置
JP6392955B2 (ja) 金属酸化物膜

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20140625

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid