JP2015029087A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2015029087A JP2015029087A JP2014131751A JP2014131751A JP2015029087A JP 2015029087 A JP2015029087 A JP 2015029087A JP 2014131751 A JP2014131751 A JP 2014131751A JP 2014131751 A JP2014131751 A JP 2014131751A JP 2015029087 A JP2015029087 A JP 2015029087A
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- Prior art keywords
- layer
- oxide semiconductor
- transistor
- oxide
- insulating layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 428
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- 239000000523 sample Substances 0.000 claims description 55
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- 229910052738 indium Inorganic materials 0.000 claims description 31
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052726 zirconium Inorganic materials 0.000 claims description 14
- 229910052684 Cerium Inorganic materials 0.000 claims description 13
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- 229910052718 tin Inorganic materials 0.000 claims description 13
- 238000002003 electron diffraction Methods 0.000 claims description 8
- 230000006870 function Effects 0.000 abstract description 22
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- 239000001301 oxygen Substances 0.000 description 63
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- 229910001195 gallium oxide Inorganic materials 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 125000005843 halogen group Chemical group 0.000 description 2
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
Description
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体層について、図1乃至図11を参照して説明する。
本参考例では、本実施の形態の酸化物半導体層に含まれるナノ結晶について、ナノビーム電子線回折パターンを用いて説明する。
本実施の形態では、実施の形態1で示した積層構造を有する半導体装置について、図12乃至図17を参照して説明する。
図12に半導体装置の構成例を示す。図12では、半導体装置の一例として、ボトムゲート構造のトランジスタを図示している。図12(A)は、トランジスタ450の平面図であり、図12(B)は、図12(A)のV1−W1における断面図であり、図12(C)は、図12(A)のX1−Y1における断面図である。なお、図12(A)では煩雑になることを避けるため、構成要素の一部(例えば、絶縁層408等)を省略して図示している。これは以降の平面図においても同様である。
図13に、トランジスタ450の変形例としてトランジスタ460を図示する。図13(A)は、トランジスタ460の平面図であり、図13(B)は、図13(A)のV2−W2における断面図であり、図13(C)は、図13(A)のX2−Y2における断面図である。
以下に、トランジスタ460の作製方法の一例について、図14を参照して説明する。
図15にトランジスタ350の構成例を示す。トランジスタ350は、実施の形態1で図3を用いて説明した積層構造を有するトップゲート構造のトランジスタである。図15(A)は、トランジスタ350の平面図であり、図15(B)は図15(A)のV3−W3における断面図であり、図15(C)は図15(A)のX3−Y3における断面図である。
図16にトランジスタ360の構成例を示す。トランジスタ360は、トランジスタ350とは一部が異なる構成を有するトップゲート構造のトランジスタである。図16(A)は、トランジスタ360の平面図であり、図16(B)は図16(A)のV4−W4における断面図であり、図16(C)は図16(A)のX4−Y4における断面図である。
図16に示すトランジスタ360の作製方法の一例を図17を用いて説明する。
本発明の一態様に係る半導体装置の一例として、論理回路であるNOR型回路の回路図の一例を図18(A)に示す。図18(B)はNAND型回路の回路図である。
本実施の形態では、実施の形態2に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を、図面を用いて説明する。
本実施の形態では、本発明の一態様の表示パネルの構成について、図20を参照しながら説明する。
また、画素の回路構成の一例を図20(B)に示す。ここでは、VA型液晶表示パネルの画素に適用することができる画素回路を示す。
また、画素の回路構成の他の一例を図20(C)に示す。ここでは、有機EL素子を用いた表示パネルの画素構造を示す。
本実施の形態では、本発明の一態様の酸化物半導体層を用いた半導体装置および電子機器の構成について、図21および図22を参照しながら説明する。
104 ゲート絶縁層
106 酸化物半導体層
106a 層
106b 層
106c 層
108 絶縁層
110 半導体層
116 酸化物半導体層
116a 層
116b 層
116c 層
124 絶縁膜
200 石英ガラス基板
202 ダミー基板
204 酸化物半導体層
208 酸化物半導体膜
208a 酸化物半導体層
208b 酸化物半導体層
210a 領域
210b 領域
250 メモリセル
251 メモリセルアレイ
251a メモリセルアレイ
251b メモリセルアレイ
253 周辺回路
254 容量素子
260 トランジスタ
262 トランジスタ
264 容量素子
300 基板
302 ゲート電極層
303 ゲート絶縁膜
304 ゲート絶縁層
308 絶縁層
310a ソース電極層
310b ドレイン電極層
314a 酸化物半導体層
314b 酸化物半導体層
316 酸化物半導体層
316a 層
316b 層
316c 層
317a 酸化物半導体膜
317b 酸化物半導体膜
317c 酸化物半導体膜
350 トランジスタ
360 トランジスタ
400 基板
402 ゲート電極層
403 ゲート絶縁膜
404 ゲート絶縁層
404a 絶縁層
404b 絶縁層
406 酸化物半導体層
406a 層
406b 層
407a 酸化物半導体膜
407b 酸化物半導体膜
408 絶縁層
408a 絶縁層
408b 絶縁層
409 コンタクトホール
410a ソース電極層
410b ドレイン電極層
450 トランジスタ
460 トランジスタ
500 基板
501 画素部
502 走査線駆動回路
503 走査線駆動回路
504 信号線駆動回路
510 容量配線
512 ゲート配線
513 ゲート配線
514 ドレイン電極層
516 トランジスタ
517 トランジスタ
518 液晶素子
519 液晶素子
520 画素
521 スイッチング用トランジスタ
522 駆動用トランジスタ
523 容量素子
524 発光素子
525 信号線
526 走査線
527 電源線
528 共通電極
801 トランジスタ
802 トランジスタ
803 トランジスタ
804 トランジスタ
811 トランジスタ
812 トランジスタ
813 トランジスタ
814 トランジスタ
901 RF回路
902 アナログベースバンド回路
903 デジタルベースバンド回路
904 バッテリー
905 電源回路
906 アプリケーションプロセッサ
907 CPU
908 DSP
910 フラッシュメモリ
911 ディスプレイコントローラ
912 メモリ回路
913 ディスプレイ
914 表示部
915 ソースドライバ
916 ゲートドライバ
917 音声回路
918 キーボード
919 タッチセンサ
1021 本体
1022 固定部
1023 表示部
1024 操作ボタン
1025 外部メモリスロット
1030 筐体
1031 筐体
1032 表示パネル
1033 スピーカー
1034 マイクロフォン
1035 操作キー
1036 ポインティングデバイス
1037 カメラ用レンズ
1038 外部接続端子
1040 太陽電池セル
1041 外部メモリスロット
1050 テレビジョン装置
1051 筐体
1052 記憶媒体再生録画部
1053 表示部
1054 外部接続端子
1055 スタンド
1056 外部メモリ
1101 本体
1102 筐体
1103a 表示部
1103b 表示部
1104 キーボードボタン
Claims (8)
- 酸化物半導体層と、
前記酸化物半導体層と互いに重なるゲート電極層と、
前記酸化物半導体層と前記ゲート電極層の間のゲート絶縁層と、
前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層と、
前記酸化物半導体層を介して前記ゲート絶縁層と互いに重なる絶縁層と、を有し、
前記酸化物半導体層は、第1の層と、前記第1の層と前記絶縁層との間の第2の層との積層構造を含み、
前記第1の層及び前記第2の層はそれぞれ、10nm以下のサイズの結晶を含み、
前記第1の層及び前記第2の層はそれぞれ、In−M−Zn酸化物(Mは、Al、Ga、Ge、Y、Zr、Sn、La、Ce又はHf)で表記される酸化物半導体層であり、且つ、前記第2の層のインジウムに対するMの原子数比は前記第1の層のインジウムに対するMの原子数比よりも高いことを特徴とする半導体装置。 - 酸化物半導体層と、
前記酸化物半導体層と互いに重なるゲート電極層と、
前記酸化物半導体層と前記ゲート電極層の間のゲート絶縁層と、
前記酸化物半導体層と電気的に接続するソース電極層及びドレイン電極層と、
前記酸化物半導体層を介して前記ゲート絶縁層と互いに重なる絶縁層と、を有し、
前記酸化物半導体層は、第1の層と、前記第1の層と前記絶縁層との間の第2の層と、前記第1の層と前記ゲート絶縁層との間の第3の層と、を含み、
前記第1の層乃至前記第3の層はそれぞれ、10nm以下のサイズの結晶を含み、
前記第1の層、前記第2の層及び前記第3の層はそれぞれ、In−M−Zn酸化物(Mは、Al、Ga、Ge、Y、Zr、Sn、La、Ce又はHf)で表記される酸化物半導体層であり、且つ、前記第2の層のインジウムに対するMの原子数比及び前記第3の層のインジウムに対するMの原子数比はそれぞれ、前記第1の層のインジウムに対するMの原子数比よりも高いことを特徴とする半導体装置。 - 請求項2において、
前記第3の層は、電子線のプローブ径を1nm以上10nm以下に収束させたナノビーム電子線回折における回折パターンにおいて、円周状に配置された複数のスポットが観察される半導体装置。 - 請求項1乃至3のいずれか一において、
前記第1の層及び前記第2の層は、電子線のプローブ径を1nm以上10nm以下に収束させたナノビーム電子線回折における回折パターンにおいて、円周状に配置された複数のスポットが観察される半導体装置。 - 請求項1乃至4のいずれか一において、
前記第2の層の伝導帯下端のエネルギーは、前記第1の層の伝導帯下端のエネルギーよりも0.05eV以上2eV以下の範囲で真空準位に近いことを特徴とする半導体装置。 - 請求項1乃至5のいずれか一において、
前記絶縁層は、前記酸化物半導体層上に接して設けられ、
前記絶縁層に設けられた開口部において、前記酸化物半導体層と、前記ソース電極層又は前記ドレイン電極層とが接する半導体装置。 - 請求項6において、
前記ソース電極層及び前記ドレイン電極層は、前記絶縁層及び前記第2の層に設けられた開口部において、前記第1の層と接する半導体装置。 - 請求項2又は3において、
前記ソース電極層及び前記ドレイン電極層は、前記第1の層の側面及び上面の一部と接するように設けられ、
前記第3の層は、前記ソース電極層及び前記ドレイン電極層から露出した前記第1の層の一部と接するように、前記ソース電極層及び前記ドレイン電極層上に設けられる半導体装置。
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JP2017163137A (ja) * | 2016-03-04 | 2017-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP2018026526A (ja) * | 2016-05-20 | 2018-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置または当該半導体装置を有する表示装置 |
US10374098B2 (en) | 2016-10-21 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2020057797A (ja) * | 2016-04-13 | 2020-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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US9496330B2 (en) | 2013-08-02 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
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JP7392024B2 (ja) | 2023-12-05 |
JP6602918B2 (ja) | 2019-11-06 |
JP2022097483A (ja) | 2022-06-30 |
JP6852133B2 (ja) | 2021-03-31 |
JP6359892B2 (ja) | 2018-07-18 |
JP2021106275A (ja) | 2021-07-26 |
JP2018148237A (ja) | 2018-09-20 |
JP2024019204A (ja) | 2024-02-08 |
JP2020073954A (ja) | 2020-05-14 |
JP7052110B2 (ja) | 2022-04-11 |
KR20150002500A (ko) | 2015-01-07 |
US20150001533A1 (en) | 2015-01-01 |
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