JP6356821B2 - Ntcデバイスおよびその製造のための方法 - Google Patents
Ntcデバイスおよびその製造のための方法 Download PDFInfo
- Publication number
- JP6356821B2 JP6356821B2 JP2016552612A JP2016552612A JP6356821B2 JP 6356821 B2 JP6356821 B2 JP 6356821B2 JP 2016552612 A JP2016552612 A JP 2016552612A JP 2016552612 A JP2016552612 A JP 2016552612A JP 6356821 B2 JP6356821 B2 JP 6356821B2
- Authority
- JP
- Japan
- Prior art keywords
- ntc
- electrode
- temperature
- copper
- basic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims description 68
- 239000010949 copper Substances 0.000 claims description 52
- 229910052802 copper Inorganic materials 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 150000001768 cations Chemical class 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 25
- 239000011230 binding agent Substances 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 24
- 229910052742 iron Inorganic materials 0.000 claims description 19
- 229910052748 manganese Inorganic materials 0.000 claims description 11
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 39
- 238000005245 sintering Methods 0.000 description 26
- 239000011572 manganese Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 7
- 229910000510 noble metal Inorganic materials 0.000 description 7
- 238000006722 reduction reaction Methods 0.000 description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 229910052596 spinel Inorganic materials 0.000 description 4
- 239000011029 spinel Substances 0.000 description 4
- 238000009770 conventional sintering Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005261 decarburization Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
- H01C7/046—Iron oxides or ferrites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
- C01G53/40—Nickelates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/016—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on manganites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
- C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/07—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by resistor foil bonding, e.g. cladding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/32—Three-dimensional structures spinel-type (AB2O4)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6584—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage below that of air
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6586—Processes characterised by the flow of gas
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/762—Cubic symmetry, e.g. beta-SiC
- C04B2235/763—Spinel structure AB2O4
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
2 : 第2の電極
3 : NTC素子
10 : NTCデバイス
100 : NTC部品
Claims (12)
- NTCデバイス(10)であって、
1つの第1の電極(1)および1つの第2の電極(2)と、
前記第1の電極(1)と前記第2の電極(2)との間に配設されている1つのNTC素子(3)と、
を備え、
前記NTC素子(3)は、一般組成AB2O4のセラミックを備え、ここでAおよびBはそれぞれ、Mn,Ni,Co,およびCuの材料の1つ以上を追加的に含み、
前記セラミックは、(Mn t Ni u Co v Cu w )(Mn x Co y Fe z )O 4 の式による組成であり、t+u+v+w=1およびx+y+z=2となっており、
ここでtは[0.2〜0.4]から、uは[0.18〜0.38]から、vは[0〜0.15]から、wは[0.27〜0.47]から、xは[0.63〜0.83]から、yは[0〜0.19]から、そしてzは[1.07〜1.27]から選択されている、
ことを特徴とするNTCデバイス。 - Aは2価のカチオンであり、そしてBは3価のカチオンであることを特徴とする、請求項1に記載のNTCデバイス。
- 前記第1の電極(1)は、主成分として銅を用いた1つの層を備えることを特徴とする、請求項1または2に記載のNTCデバイス。
- 前記第1の電極(1)は、10μm〜100μmの層厚を有することを特徴とする、請求項1乃至3のいずれか1項に記載のNTCデバイス。
- 前記NTCデバイスは、30μm〜100μmの部品厚を有することを特徴とする、請求項1乃至4のいずれか1項に記載のNTCデバイス。
- 前記第1および第2の電極(1,2)の少なくとも1つは、銅の他にガラスと、酸化ジルコニウム、酸化アルミニウム、酸化マグネシウム(MgO)の1つ以上とを含むことを特徴とする、請求項1乃至5のいずれか1項に記載のNTCデバイス。
- 前記NTCデバイスは、表面実装可能に構成されていることを特徴とする、請求項1乃至6のいずれか1項に記載のNTCデバイス。
- NTCデバイスを製造するための方法であって、
第1の電極(1)、基本材料、および第2の電極(2)を1つの結着体とするための結合ステップであって、当該基本材料が、Mn,Ni,Co,およびCuの材料、および/またはこれらの化合物の1つ以上、およびFe,Y,Pr,Al,In,およびSbの材料、および/またはこれらの化合物の1つ以上を含む結合ステップと、
温度工程であって、当該工程の温度が、前記基本材料からNTC素子(3)が形成され、かつ前記基本材料が前記第1および第2の電極(1,2)の少なくとも1つと共に焼結されるように選択されている温度工程と、
を備え、
前記NTC素子(3)は、前記結着体の製造のために前記第1の電極上にパターニングされて取り付けられており、
前記基本材料は、(Mn t Ni u Co v Cu w )(Mn x Co y Fe z )O 4 の式による組成であり、t+u+v+w=1およびx+y+z=2となっており、
ここでtは[0.2〜0.4]から、uは[0.18〜0.38]から、vは[0〜0.15]から、wは[0.27〜0.47]から、xは[0.63〜0.83]から、yは[0〜0.19]から、そしてzは[1.07〜1.27]から選択されている、
ことを特徴とする方法。 - 前記基本材料は、結晶粒状すなわち紛体状のセラミックを含み、当該セラミックは前記結合ステップの前に、直径が1μmより小さい中程度の粒子サイズあるいは結晶粒サイズに粉砕されることを特徴とする、請求項8に記載の方法。
- 前記結着体は、銅電極の場合、前記温度工程に際に、500℃〜1050℃、好ましくは850℃〜1050℃の温度で、1μbarより小さくかつ銅/酸化銅(Cu/Cu 2 O)の平衡分圧より下側の酸素分圧を有する保護ガス雰囲気に曝されることを特徴とする、請求項8または9に記載の方法。
- 前記基本材料が、前記結合ステップの前に、薄膜成形によって準備され、前記NTC素子(3)が、前記第1および第2の電極(1,2)を有する前記結着体に対してコーティングされることを特徴とする、請求項8乃至10のいずれか1項に記載の方法。
- 前記結着体は、前記温度工程の前に、300℃〜500℃の温度で脱炭されることを特徴とする、請求項8乃至11のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014102042.1 | 2014-02-18 | ||
DE102014102042.1A DE102014102042A1 (de) | 2014-02-18 | 2014-02-18 | NTC-Bauelement und Verfahren zu dessen Herstellung |
PCT/EP2015/052177 WO2015124421A1 (de) | 2014-02-18 | 2015-02-03 | Ntc-bauelement und verfahren zu dessen herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017514292A JP2017514292A (ja) | 2017-06-01 |
JP6356821B2 true JP6356821B2 (ja) | 2018-07-11 |
Family
ID=52469815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016552612A Active JP6356821B2 (ja) | 2014-02-18 | 2015-02-03 | Ntcデバイスおよびその製造のための方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10074466B2 (ja) |
EP (1) | EP3108482B1 (ja) |
JP (1) | JP6356821B2 (ja) |
DE (1) | DE102014102042A1 (ja) |
WO (1) | WO2015124421A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105552322B (zh) * | 2015-12-13 | 2018-07-03 | 浙江美达瑞新材料科技有限公司 | 四元离子复合改性的锂离子电池正极材料及其制备方法 |
DE102015225584A1 (de) * | 2015-12-17 | 2017-06-22 | Robert Bosch Gmbh | Startvorrichtung für eine Brennkraftmaschine |
CN105967675A (zh) * | 2016-05-06 | 2016-09-28 | 中南大学 | 一种适合低温制备的新型ntc热敏电阻材料 |
DE102016115642A1 (de) * | 2016-08-23 | 2018-03-01 | Epcos Ag | Keramikmaterial, Bauelement und Verfahren zur Herstellung des Bauelements |
CN109734423B (zh) * | 2019-02-27 | 2020-05-19 | 华中科技大学 | 一种负温度系数的热敏材料及其制备方法 |
EP3800453A1 (en) * | 2019-10-04 | 2021-04-07 | TE Connectivity Sensors Germany GmbH | Sensor element of a resistance thermometer and substrate for a sensor element |
CN110698189B (zh) * | 2019-11-15 | 2021-11-02 | 中国科学院新疆理化技术研究所 | 一种镧离子掺杂的深低温热敏电阻材料及制备方法 |
CN112053822A (zh) * | 2020-09-04 | 2020-12-08 | 翔声科技(厦门)有限公司 | 一种负温度系数电阻器的制作工艺 |
CN112321298B (zh) * | 2020-11-06 | 2022-03-11 | 中国科学院新疆理化技术研究所 | 一种类钙钛矿型热敏电阻材料及其制备方法 |
US20240257999A1 (en) * | 2021-11-11 | 2024-08-01 | Shibaura Electronics Co., Ltd. | Thermistor sintered body and method for manufacturing thermistor sintered body |
CN115101274B (zh) * | 2022-07-27 | 2024-07-09 | 成都顺康三森电子有限责任公司 | 一种线性温度传感器功能材料组成物及其制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2645700A (en) * | 1949-08-27 | 1953-07-14 | Bell Telephone Labor Inc | Semiconductor of mixed nickel, manganese, and iron oxides |
GB1054525A (ja) | 1965-02-03 | |||
NL6813992A (ja) | 1968-09-30 | 1970-04-01 | ||
US4008514A (en) | 1973-05-11 | 1977-02-22 | Elderbaum Gilbert J | Method of making ceramic capacitor |
JPS61242002A (ja) | 1985-04-19 | 1986-10-28 | 松下電器産業株式会社 | 薄膜サ−ミスタ |
JPS63315549A (ja) | 1987-06-18 | 1988-12-23 | Matsushita Electric Ind Co Ltd | サ−ミスタ磁器組成物 |
EP0609776A1 (de) * | 1993-02-05 | 1994-08-10 | SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG | Sinterkeramik für hochstabile Thermistoren und Verfahren zu ihrer Herstellung |
JPH07211515A (ja) | 1994-01-14 | 1995-08-11 | Matsushita Electric Ind Co Ltd | サーミスタ素子の製造方法 |
JP2782579B2 (ja) | 1994-04-08 | 1998-08-06 | 工業技術院長 | 酸化物系半導体微粉体の製造方法 |
DE4420657A1 (de) | 1994-06-14 | 1995-12-21 | Siemens Matsushita Components | Sinterkeramik für hochstabile Thermistoren und Verfahren zu ihrer Herstellung |
JPH09306643A (ja) | 1996-05-13 | 1997-11-28 | Matsushita Electric Ind Co Ltd | 発熱体 |
DE19942176C2 (de) * | 1999-09-03 | 2003-07-24 | Epcos Ag | Verfahren zur Verhinderung einer Thermistordrift bei einem NTC-Thermistor |
DE10159451A1 (de) | 2001-12-04 | 2003-06-26 | Epcos Ag | Elektrisches Bauelement mit einem negativen Temperaturkoeffizienten |
CN1624821A (zh) | 2004-12-21 | 2005-06-08 | 上海维安热电材料股份有限公司 | 由半导体陶瓷制成的ntc热敏电阻元件 |
JP2008294326A (ja) | 2007-05-28 | 2008-12-04 | Tateyama Kagaku Kogyo Kk | 厚膜サーミスタ組成物とその製造方法並びに厚膜サーミスタ素子 |
JP5176775B2 (ja) * | 2008-06-02 | 2013-04-03 | 株式会社村田製作所 | セラミック電子部品及びその製造方法 |
CN101429655B (zh) | 2008-11-28 | 2010-11-17 | 天津大学 | 热敏电阻表面局部化学镀制造良好欧姆接触电极方法 |
KR20120068622A (ko) | 2010-12-17 | 2012-06-27 | 삼성전기주식회사 | 외부전극용 도전성 페이스트 조성물, 이를 포함하는 적층 세라믹 커패시터 및 그 제조방법 |
CN202281620U (zh) * | 2011-02-22 | 2012-06-20 | 深圳市安培盛科技有限公司 | 采用铜浆制作电极的ntc传感器 |
JP6089220B2 (ja) | 2011-12-21 | 2017-03-08 | パナソニックIpマネジメント株式会社 | 電圧非直線性抵抗体組成物およびこれを用いた積層バリスタ |
DE102012103994A1 (de) | 2012-05-07 | 2013-11-21 | Epcos Ag | Verfahren zur Herstellung eines Vielschichtbauelements und durch das Verfahren hergestelltes Vielschichtbauelement |
US8647815B1 (en) | 2012-07-26 | 2014-02-11 | E I Du Pont De Nemours And Company | Method of manufacturing copper electrode |
-
2014
- 2014-02-18 DE DE102014102042.1A patent/DE102014102042A1/de not_active Ceased
-
2015
- 2015-02-03 JP JP2016552612A patent/JP6356821B2/ja active Active
- 2015-02-03 EP EP15704248.2A patent/EP3108482B1/de active Active
- 2015-02-03 WO PCT/EP2015/052177 patent/WO2015124421A1/de active Application Filing
- 2015-02-03 US US15/120,100 patent/US10074466B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102014102042A1 (de) | 2015-08-20 |
US10074466B2 (en) | 2018-09-11 |
JP2017514292A (ja) | 2017-06-01 |
EP3108482A1 (de) | 2016-12-28 |
US20170250012A1 (en) | 2017-08-31 |
WO2015124421A1 (de) | 2015-08-27 |
EP3108482B1 (de) | 2019-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6356821B2 (ja) | Ntcデバイスおよびその製造のための方法 | |
JP4726890B2 (ja) | 表面実装型負特性サーミスタ | |
CN101350241B (zh) | 可变电阻 | |
CN106024383A (zh) | 层叠陶瓷电子部件 | |
CN103247437B (zh) | 陶瓷电子部件 | |
TWI375665B (ja) | ||
JPWO2008041481A1 (ja) | Ntcサーミスタ磁器とそれを用いたntcサーミスタ | |
JP5678520B2 (ja) | サーミスタ素子 | |
CN103247439A (zh) | 陶瓷电子部件 | |
TW200849287A (en) | Voltage non-linear resistance ceramic composition and voltage on-linear resistance element | |
TWI283419B (en) | Laminated ceramic capacitor | |
JP4552679B2 (ja) | 酸化物磁性材料及び積層型インダクタ | |
US20040121179A1 (en) | Electrical multilayer component and method for the production thereof | |
JP2008305844A (ja) | 積層セラミックコンデンサ及びその製造方法 | |
US20100307669A1 (en) | Piezoceramic multi-layer element | |
CN107001145B (zh) | 导电性氧化物烧结体、导电用构件、气体传感器、压电元件以及压电元件的制造方法 | |
CN103247438A (zh) | 陶瓷电子部件及其制造方法 | |
JP2005150289A (ja) | サーミスタ用組成物及びサーミスタ素子 | |
JP4984958B2 (ja) | 積層型サーミスタおよびその製造方法 | |
WO2019135324A1 (ja) | 温度センサ素子 | |
JP2016225404A (ja) | 酸化亜鉛系バリスタ用焼結体およびこれを用いた多層基板、ならびにそれらの製造方法 | |
JP4231653B2 (ja) | 積層型の圧電アクチュエータの製造方法 | |
JP5193319B2 (ja) | セラミックス組成物及び電子部品 | |
JP2016146380A (ja) | 電圧非直線性抵抗体組成物とこれを用いたバリスタおよび積層バリスタ | |
JP4710654B2 (ja) | 積層型チップバリスタの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180523 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180614 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6356821 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |