JP6352224B2 - 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 - Google Patents

位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 Download PDF

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JP6352224B2
JP6352224B2 JP2015142927A JP2015142927A JP6352224B2 JP 6352224 B2 JP6352224 B2 JP 6352224B2 JP 2015142927 A JP2015142927 A JP 2015142927A JP 2015142927 A JP2015142927 A JP 2015142927A JP 6352224 B2 JP6352224 B2 JP 6352224B2
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Prior art keywords
phase shift
film
layer
shift mask
wavelength
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Japanese (ja)
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JP2017026701A (ja
JP2017026701A5 (enExample
Inventor
和丈 谷口
和丈 谷口
誠治 坪井
誠治 坪井
正男 牛田
正男 牛田
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Hoya Corp
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Hoya Corp
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Priority to JP2015142927A priority Critical patent/JP6352224B2/ja
Priority to TW105119339A priority patent/TWI641493B/zh
Priority to TW107135068A priority patent/TWI677437B/zh
Priority to KR1020160080783A priority patent/KR101935448B1/ko
Priority to CN201610520850.3A priority patent/CN106353963B/zh
Publication of JP2017026701A publication Critical patent/JP2017026701A/ja
Publication of JP2017026701A5 publication Critical patent/JP2017026701A5/ja
Application granted granted Critical
Publication of JP6352224B2 publication Critical patent/JP6352224B2/ja
Priority to KR1020180172159A priority patent/KR102003650B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
JP2015142927A 2015-07-17 2015-07-17 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 Active JP6352224B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015142927A JP6352224B2 (ja) 2015-07-17 2015-07-17 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
TW105119339A TWI641493B (zh) 2015-07-17 2016-06-20 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法
TW107135068A TWI677437B (zh) 2015-07-17 2016-06-20 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法
KR1020160080783A KR101935448B1 (ko) 2015-07-17 2016-06-28 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
CN201610520850.3A CN106353963B (zh) 2015-07-17 2016-07-05 相移掩模半成品、相移掩模制造方法及显示装置的制造方法
KR1020180172159A KR102003650B1 (ko) 2015-07-17 2018-12-28 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015142927A JP6352224B2 (ja) 2015-07-17 2015-07-17 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

Related Child Applications (1)

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JP2018104815A Division JP2018173644A (ja) 2018-05-31 2018-05-31 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

Publications (3)

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JP2017026701A JP2017026701A (ja) 2017-02-02
JP2017026701A5 JP2017026701A5 (enExample) 2017-06-15
JP6352224B2 true JP6352224B2 (ja) 2018-07-04

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JP2015142927A Active JP6352224B2 (ja) 2015-07-17 2015-07-17 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

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JP (1) JP6352224B2 (enExample)
KR (2) KR101935448B1 (enExample)
CN (1) CN106353963B (enExample)
TW (2) TWI641493B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102568807B1 (ko) * 2017-03-28 2023-08-21 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 그것을 사용한 위상 시프트 마스크의 제조 방법, 그리고 패턴 전사 방법
JP6998181B2 (ja) * 2017-11-14 2022-02-04 アルバック成膜株式会社 マスクブランク、位相シフトマスクおよびその製造方法
TWI711878B (zh) * 2018-03-15 2020-12-01 日商大日本印刷股份有限公司 大型光罩
JP7062480B2 (ja) * 2018-03-22 2022-05-06 アルバック成膜株式会社 マスクブランクスおよびフォトマスク、その製造方法
JP6999460B2 (ja) * 2018-03-23 2022-01-18 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6938428B2 (ja) * 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
KR102468553B1 (ko) * 2020-09-15 2022-11-22 주식회사 에스앤에스텍 블랭크마스크 및 포토마스크
TW202235996A (zh) * 2020-11-24 2022-09-16 日商Ｈｏｙａ股份有限公司 相移光罩基底、相移光罩之製造方法及顯示裝置之製造方法
JP2022083394A (ja) * 2020-11-24 2022-06-03 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び表示装置の製造方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크

Family Cites Families (17)

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JPS57151945A (en) * 1981-03-17 1982-09-20 Hoya Corp Photomask blank and its manufacture
JPH09244212A (ja) * 1996-03-12 1997-09-19 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランク
JP2983020B1 (ja) * 1998-12-18 1999-11-29 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
ATE257251T1 (de) * 2000-01-12 2004-01-15 Shinetsu Chemical Co Rohling für phasenschiebermaske, phasenschiebermaske, und herstellungsverfahren
JP2002244274A (ja) * 2001-02-13 2002-08-30 Shin Etsu Chem Co Ltd フォトマスクブランク、フォトマスク及びこれらの製造方法
JP2005092241A (ja) * 2002-03-01 2005-04-07 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
KR101503932B1 (ko) * 2005-09-30 2015-03-18 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조방법과 반도체 장치의 제조 방법
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
KR101151685B1 (ko) * 2011-04-22 2012-07-20 주식회사 에스앤에스텍 블랭크 마스크 및 포토마스크
KR20140093215A (ko) * 2011-10-21 2014-07-25 다이니폰 인사츠 가부시키가이샤 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
KR102044402B1 (ko) * 2013-04-17 2019-11-13 알박 세이마쿠 가부시키가이샤 위상 시프트 마스크의 제조 방법, 위상 시프트 마스크, 및 위상 시프트 마스크의 제조 장치
JP6138676B2 (ja) * 2013-12-27 2017-05-31 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法

Also Published As

Publication number Publication date
TW201902684A (zh) 2019-01-16
KR102003650B1 (ko) 2019-07-24
TWI677437B (zh) 2019-11-21
KR101935448B1 (ko) 2019-01-07
JP2017026701A (ja) 2017-02-02
TWI641493B (zh) 2018-11-21
TW201707956A (zh) 2017-03-01
KR20170009722A (ko) 2017-01-25
CN106353963A (zh) 2017-01-25
CN106353963B (zh) 2020-08-25
KR20190002403A (ko) 2019-01-08

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