TWI641493B - 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法 - Google Patents
相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法 Download PDFInfo
- Publication number
- TWI641493B TWI641493B TW105119339A TW105119339A TWI641493B TW I641493 B TWI641493 B TW I641493B TW 105119339 A TW105119339 A TW 105119339A TW 105119339 A TW105119339 A TW 105119339A TW I641493 B TWI641493 B TW I641493B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase shift
- film
- layer
- reflectance
- shift mask
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 545
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 174
- 239000011651 chromium Substances 0.000 claims abstract description 100
- 229910052751 metal Inorganic materials 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 88
- 230000009467 reduction Effects 0.000 claims abstract description 81
- 230000008033 biological extinction Effects 0.000 claims abstract description 77
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 60
- 238000002834 transmittance Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 26
- 239000002131 composite material Substances 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 abstract description 16
- 239000010408 film Substances 0.000 description 404
- 239000007789 gas Substances 0.000 description 103
- 238000004544 sputter deposition Methods 0.000 description 63
- 230000000052 comparative effect Effects 0.000 description 40
- 239000000203 mixture Substances 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 150000001845 chromium compounds Chemical class 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000000985 reflectance spectrum Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 230000005611 electricity Effects 0.000 description 10
- 239000011737 fluorine Substances 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052743 krypton Inorganic materials 0.000 description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 3
- 239000001273 butane Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-142927 | 2015-07-17 | ||
| JP2015142927A JP6352224B2 (ja) | 2015-07-17 | 2015-07-17 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201707956A TW201707956A (zh) | 2017-03-01 |
| TWI641493B true TWI641493B (zh) | 2018-11-21 |
Family
ID=57843194
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105119339A TWI641493B (zh) | 2015-07-17 | 2016-06-20 | 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法 |
| TW107135068A TWI677437B (zh) | 2015-07-17 | 2016-06-20 | 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107135068A TWI677437B (zh) | 2015-07-17 | 2016-06-20 | 相偏移光罩基底及使用其之相偏移光罩之製造方法、以及顯示裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6352224B2 (enExample) |
| KR (2) | KR101935448B1 (enExample) |
| CN (1) | CN106353963B (enExample) |
| TW (2) | TWI641493B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102568807B1 (ko) * | 2017-03-28 | 2023-08-21 | 호야 가부시키가이샤 | 위상 시프트 마스크 블랭크 및 그것을 사용한 위상 시프트 마스크의 제조 방법, 그리고 패턴 전사 방법 |
| JP6998181B2 (ja) * | 2017-11-14 | 2022-02-04 | アルバック成膜株式会社 | マスクブランク、位相シフトマスクおよびその製造方法 |
| CN112119352B (zh) * | 2018-03-15 | 2024-07-26 | 大日本印刷株式会社 | 大型光掩模 |
| JP7062480B2 (ja) * | 2018-03-22 | 2022-05-06 | アルバック成膜株式会社 | マスクブランクスおよびフォトマスク、その製造方法 |
| JP6999460B2 (ja) * | 2018-03-23 | 2022-01-18 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP6938428B2 (ja) * | 2018-05-30 | 2021-09-22 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| KR102468553B1 (ko) * | 2020-09-15 | 2022-11-22 | 주식회사 에스앤에스텍 | 블랭크마스크 및 포토마스크 |
| TW202235996A (zh) * | 2020-11-24 | 2022-09-16 | 日商Ｈｏｙａ股份有限公司 | 相移光罩基底、相移光罩之製造方法及顯示裝置之製造方法 |
| JP2022083394A (ja) * | 2020-11-24 | 2022-06-03 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスクの製造方法及び表示装置の製造方法 |
| KR102402742B1 (ko) * | 2021-04-30 | 2022-05-26 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크 및 이를 이용한 포토마스크 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4530891A (en) * | 1981-03-17 | 1985-07-23 | Hoya Electronics Co., Ltd. | Photo-mask blank for use in lithography including a modified chromium compound |
| US20010007731A1 (en) * | 2000-01-12 | 2001-07-12 | Yukio Inazuki | Phase shift mask blank, phase shift mask, and method of manufacture |
| TW201525608A (zh) * | 2013-12-27 | 2015-07-01 | Hoya Corp | 相位偏移光罩基底及其製造方法、與相位偏移光罩之製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09244212A (ja) * | 1996-03-12 | 1997-09-19 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランク |
| JP2983020B1 (ja) * | 1998-12-18 | 1999-11-29 | ホーヤ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP2002244274A (ja) * | 2001-02-13 | 2002-08-30 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| JP2005092241A (ja) * | 2002-03-01 | 2005-04-07 | Hoya Corp | ハーフトーン型位相シフトマスクブランクの製造方法 |
| JP4525893B2 (ja) * | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法 |
| JP2006078825A (ja) * | 2004-09-10 | 2006-03-23 | Shin Etsu Chem Co Ltd | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| DE602006021102D1 (de) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomaskenrohling, Photomaske und deren Herstellungsverfahren |
| KR101541982B1 (ko) * | 2005-09-30 | 2015-08-04 | 호야 가부시키가이샤 | 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조 방법과 반도체 장치의 제조 방법 |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
| KR101151685B1 (ko) * | 2011-04-22 | 2012-07-20 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 포토마스크 |
| JP6127977B2 (ja) * | 2011-10-21 | 2017-05-17 | 大日本印刷株式会社 | 大型位相シフトマスクおよび大型位相シフトマスクの製造方法 |
| KR101282040B1 (ko) * | 2012-07-26 | 2013-07-04 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크 |
| WO2014171510A1 (ja) * | 2013-04-17 | 2014-10-23 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、位相シフトマスク、及び位相シフトマスクの製造装置 |
-
2015
- 2015-07-17 JP JP2015142927A patent/JP6352224B2/ja active Active
-
2016
- 2016-06-20 TW TW105119339A patent/TWI641493B/zh active
- 2016-06-20 TW TW107135068A patent/TWI677437B/zh active
- 2016-06-28 KR KR1020160080783A patent/KR101935448B1/ko active Active
- 2016-07-05 CN CN201610520850.3A patent/CN106353963B/zh active Active
-
2018
- 2018-12-28 KR KR1020180172159A patent/KR102003650B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4530891A (en) * | 1981-03-17 | 1985-07-23 | Hoya Electronics Co., Ltd. | Photo-mask blank for use in lithography including a modified chromium compound |
| US20010007731A1 (en) * | 2000-01-12 | 2001-07-12 | Yukio Inazuki | Phase shift mask blank, phase shift mask, and method of manufacture |
| TW201525608A (zh) * | 2013-12-27 | 2015-07-01 | Hoya Corp | 相位偏移光罩基底及其製造方法、與相位偏移光罩之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6352224B2 (ja) | 2018-07-04 |
| KR102003650B1 (ko) | 2019-07-24 |
| JP2017026701A (ja) | 2017-02-02 |
| KR101935448B1 (ko) | 2019-01-07 |
| KR20170009722A (ko) | 2017-01-25 |
| TW201707956A (zh) | 2017-03-01 |
| CN106353963A (zh) | 2017-01-25 |
| TWI677437B (zh) | 2019-11-21 |
| CN106353963B (zh) | 2020-08-25 |
| KR20190002403A (ko) | 2019-01-08 |
| TW201902684A (zh) | 2019-01-16 |
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