JP6352143B2 - 基板液処理装置及び基板液処理方法 - Google Patents

基板液処理装置及び基板液処理方法 Download PDF

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Publication number
JP6352143B2
JP6352143B2 JP2014205113A JP2014205113A JP6352143B2 JP 6352143 B2 JP6352143 B2 JP 6352143B2 JP 2014205113 A JP2014205113 A JP 2014205113A JP 2014205113 A JP2014205113 A JP 2014205113A JP 6352143 B2 JP6352143 B2 JP 6352143B2
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processing liquid
liquid
concentration
processing
tank
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JP2014205113A
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English (en)
Japanese (ja)
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JP2015119168A (ja
JP2015119168A5 (ko
Inventor
木 康 弘 高
木 康 弘 高
宮 洋 司 小
宮 洋 司 小
國 力 信
國 力 信
竹 圭 吾 佐
竹 圭 吾 佐
本 篤 史 穴
本 篤 史 穴
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2014205113A priority Critical patent/JP6352143B2/ja
Priority to TW103138346A priority patent/TWI579037B/zh
Priority to KR1020140154346A priority patent/KR102289796B1/ko
Priority to US14/536,989 priority patent/US10162371B2/en
Priority to CN201910418261.8A priority patent/CN110197803B/zh
Priority to CN201410641579.XA priority patent/CN104637841B/zh
Publication of JP2015119168A publication Critical patent/JP2015119168A/ja
Publication of JP2015119168A5 publication Critical patent/JP2015119168A5/ja
Application granted granted Critical
Publication of JP6352143B2 publication Critical patent/JP6352143B2/ja
Priority to US16/188,525 priority patent/US10591935B2/en
Priority to KR1020210037157A priority patent/KR102339333B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D11/00—Control of flow ratio
    • G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
    • G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
    • G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
    • G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Accessories For Mixers (AREA)
  • Weting (AREA)
JP2014205113A 2013-11-13 2014-10-03 基板液処理装置及び基板液処理方法 Active JP6352143B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2014205113A JP6352143B2 (ja) 2013-11-13 2014-10-03 基板液処理装置及び基板液処理方法
TW103138346A TWI579037B (zh) 2013-11-13 2014-11-05 Substrate liquid processing device and substrate liquid treatment method
KR1020140154346A KR102289796B1 (ko) 2013-11-13 2014-11-07 기판 액처리 장치 및 기판 액처리 방법
US14/536,989 US10162371B2 (en) 2013-11-13 2014-11-10 Substrate liquid processing apparatus and substrate liquid processing method
CN201910418261.8A CN110197803B (zh) 2013-11-13 2014-11-13 基板液处理装置和基板液处理方法
CN201410641579.XA CN104637841B (zh) 2013-11-13 2014-11-13 基板液处理装置和基板液处理方法
US16/188,525 US10591935B2 (en) 2013-11-13 2018-11-13 Substrate liquid processing apparatus and substrate liquid processing method
KR1020210037157A KR102339333B1 (ko) 2013-11-13 2021-03-23 기판 액처리 장치 및 기판 액처리 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013235304 2013-11-13
JP2013235304 2013-11-13
JP2014205113A JP6352143B2 (ja) 2013-11-13 2014-10-03 基板液処理装置及び基板液処理方法

Related Child Applications (1)

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JP2018108830A Division JP6657306B2 (ja) 2013-11-13 2018-06-06 基板液処理装置及び基板液処理方法

Publications (3)

Publication Number Publication Date
JP2015119168A JP2015119168A (ja) 2015-06-25
JP2015119168A5 JP2015119168A5 (ko) 2017-03-23
JP6352143B2 true JP6352143B2 (ja) 2018-07-04

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JP2014205113A Active JP6352143B2 (ja) 2013-11-13 2014-10-03 基板液処理装置及び基板液処理方法

Country Status (5)

Country Link
US (2) US10162371B2 (ko)
JP (1) JP6352143B2 (ko)
KR (2) KR102289796B1 (ko)
CN (2) CN104637841B (ko)
TW (1) TWI579037B (ko)

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JP2018110186A (ja) * 2017-01-04 2018-07-12 東京エレクトロン株式会社 液処理装置及び液処理方法
JP7004144B2 (ja) * 2017-10-25 2022-01-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7049875B2 (ja) * 2018-03-22 2022-04-07 オルガノ株式会社 希釈液製造方法および希釈液製造装置
KR102087773B1 (ko) * 2018-07-13 2020-04-23 씨앤지하이테크 주식회사 액체 혼합 공급장치
JP7101083B2 (ja) * 2018-08-23 2022-07-14 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
CN110875212B (zh) * 2018-08-31 2022-07-01 辛耘企业股份有限公司 基板处理装置
KR102221258B1 (ko) 2018-09-27 2021-03-02 세메스 주식회사 약액 토출 장치
JP7265879B2 (ja) * 2019-02-14 2023-04-27 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
JP2020175338A (ja) * 2019-04-19 2020-10-29 株式会社荏原製作所 機能水濃度制御システム、及び機能水濃度制御方法
CN110112085A (zh) * 2019-05-23 2019-08-09 德淮半导体有限公司 一种液体浓度控制装置
JP7264729B2 (ja) * 2019-05-31 2023-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
TWI741635B (zh) * 2019-06-28 2021-10-01 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置
JP7393210B2 (ja) * 2019-06-28 2023-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2021002367A1 (ja) * 2019-07-03 2021-01-07 東京エレクトロン株式会社 基板処理システム及び処理液調製方法
CN110828338B (zh) * 2019-09-30 2022-08-09 长江存储科技有限责任公司 浓度的调节方法及调节系统
CN110808218B (zh) * 2019-10-23 2022-07-08 长江存储科技有限责任公司 一种处理液供应装置的控制方法及处理液供应装置
JP2022099107A (ja) * 2020-12-22 2022-07-04 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
CN114247684B (zh) * 2021-12-17 2023-04-14 北京北方华创微电子装备有限公司 供液系统和半导体清洗系统
KR102612978B1 (ko) * 2022-08-02 2023-12-13 나가세 엔지니어링 서비스 코리아(주) 혼합 시스템

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Also Published As

Publication number Publication date
KR20210037641A (ko) 2021-04-06
CN104637841A (zh) 2015-05-20
CN110197803B (zh) 2023-07-28
JP2015119168A (ja) 2015-06-25
TWI579037B (zh) 2017-04-21
CN110197803A (zh) 2019-09-03
US20150131403A1 (en) 2015-05-14
KR20150055561A (ko) 2015-05-21
US10591935B2 (en) 2020-03-17
US20190079544A1 (en) 2019-03-14
US10162371B2 (en) 2018-12-25
KR102289796B1 (ko) 2021-08-12
TW201531331A (zh) 2015-08-16
KR102339333B1 (ko) 2021-12-13
CN104637841B (zh) 2019-06-11

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