JP6341035B2 - 基板液処理方法、基板液処理装置、及び記憶媒体 - Google Patents

基板液処理方法、基板液処理装置、及び記憶媒体 Download PDF

Info

Publication number
JP6341035B2
JP6341035B2 JP2014195493A JP2014195493A JP6341035B2 JP 6341035 B2 JP6341035 B2 JP 6341035B2 JP 2014195493 A JP2014195493 A JP 2014195493A JP 2014195493 A JP2014195493 A JP 2014195493A JP 6341035 B2 JP6341035 B2 JP 6341035B2
Authority
JP
Japan
Prior art keywords
liquid
substrate
processing
flow rate
processing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014195493A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016066740A (ja
JP2016066740A5 (enExample
Inventor
東　博之
博之 東
源太郎 五師
源太郎 五師
貴久 大塚
貴久 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014195493A priority Critical patent/JP6341035B2/ja
Priority to TW104130028A priority patent/TWI626676B/zh
Priority to US14/851,388 priority patent/US9865483B2/en
Priority to KR1020150130594A priority patent/KR102412247B1/ko
Publication of JP2016066740A publication Critical patent/JP2016066740A/ja
Publication of JP2016066740A5 publication Critical patent/JP2016066740A5/ja
Application granted granted Critical
Publication of JP6341035B2 publication Critical patent/JP6341035B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H10P72/0414—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H10P70/15—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2014195493A 2014-09-25 2014-09-25 基板液処理方法、基板液処理装置、及び記憶媒体 Active JP6341035B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014195493A JP6341035B2 (ja) 2014-09-25 2014-09-25 基板液処理方法、基板液処理装置、及び記憶媒体
TW104130028A TWI626676B (zh) 2014-09-25 2015-09-11 基板液體處理方法、基板液體處理裝置及記錄媒體
US14/851,388 US9865483B2 (en) 2014-09-25 2015-09-11 Substrate liquid processing method, substrate liquid processing apparatus, and recording medium
KR1020150130594A KR102412247B1 (ko) 2014-09-25 2015-09-15 기판 액처리 방법, 기판 액처리 장치, 및 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014195493A JP6341035B2 (ja) 2014-09-25 2014-09-25 基板液処理方法、基板液処理装置、及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2016066740A JP2016066740A (ja) 2016-04-28
JP2016066740A5 JP2016066740A5 (enExample) 2017-03-16
JP6341035B2 true JP6341035B2 (ja) 2018-06-13

Family

ID=55585250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014195493A Active JP6341035B2 (ja) 2014-09-25 2014-09-25 基板液処理方法、基板液処理装置、及び記憶媒体

Country Status (4)

Country Link
US (1) US9865483B2 (enExample)
JP (1) JP6341035B2 (enExample)
KR (1) KR102412247B1 (enExample)
TW (1) TWI626676B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6765878B2 (ja) * 2016-07-06 2020-10-07 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置
JP6815799B2 (ja) * 2016-09-13 2021-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TW201828356A (zh) * 2016-10-26 2018-08-01 日商東京威力科創股份有限公司 液體處理方法及液體處理裝置
SG11201906905XA (en) 2017-02-06 2019-08-27 Planar Semiconductor Inc Subnanometer-level light-based substrate cleaning mechanism
JP6786732B2 (ja) * 2017-02-06 2020-11-18 プレイナー・セミコンダクター・インコーポレイテッド サブナノメートルレベルの基板洗浄機構
TWI770115B (zh) * 2017-02-06 2022-07-11 新加坡商平面半導體公司 加工汙水之去除
KR102134261B1 (ko) * 2018-10-25 2020-07-16 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7197376B2 (ja) * 2019-01-17 2022-12-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7265874B2 (ja) 2019-01-28 2023-04-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7250566B2 (ja) * 2019-02-26 2023-04-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN110335835B (zh) * 2019-06-06 2021-07-16 上海中欣晶圆半导体科技有限公司 利用二段式石英喷嘴清洗硅片的装置及方法
CN112542397B (zh) * 2019-09-20 2025-03-18 沈阳芯源微电子设备股份有限公司 一种防止反溅液体污染基板的装置及方法
JP7507009B2 (ja) * 2020-05-26 2024-06-27 株式会社プレテック 基板エッチング装置
KR102583342B1 (ko) 2020-10-22 2023-09-26 세메스 주식회사 기판 처리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708495B2 (ja) 1988-09-19 1998-02-04 株式会社日立製作所 半導体冷却装置
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法
JP4312997B2 (ja) * 2002-06-04 2009-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及びノズル
US20060286804A1 (en) 2005-06-15 2006-12-21 Chuan-Yi Wu Method for forming patterned material layer
JP2007088381A (ja) 2005-09-26 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP4762098B2 (ja) * 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4901650B2 (ja) 2007-08-31 2012-03-21 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP5208586B2 (ja) * 2008-06-09 2013-06-12 大日本スクリーン製造株式会社 基板処理方法
JP4949338B2 (ja) 2008-08-06 2012-06-06 東京エレクトロン株式会社 液処理装置
JP4788785B2 (ja) 2009-02-06 2011-10-05 東京エレクトロン株式会社 現像装置、現像処理方法及び記憶媒体
JP5003774B2 (ja) 2010-02-15 2012-08-15 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5797532B2 (ja) 2011-02-24 2015-10-21 東京エレクトロン株式会社 有機溶剤を含有する現像液を用いた現像処理方法及び現像処理装置
WO2013133401A1 (ja) * 2012-03-09 2013-09-12 株式会社 荏原製作所 基板処理方法及び基板処理装置
JP6223839B2 (ja) * 2013-03-15 2017-11-01 東京エレクトロン株式会社 基板液処理方法、基板液処理装置および記憶媒体

Also Published As

Publication number Publication date
US9865483B2 (en) 2018-01-09
KR20160036488A (ko) 2016-04-04
TWI626676B (zh) 2018-06-11
JP2016066740A (ja) 2016-04-28
TW201624532A (zh) 2016-07-01
US20160093517A1 (en) 2016-03-31
KR102412247B1 (ko) 2022-06-24

Similar Documents

Publication Publication Date Title
JP6341035B2 (ja) 基板液処理方法、基板液処理装置、及び記憶媒体
JP6454245B2 (ja) 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP4527660B2 (ja) 基板処理方法及び基板処理装置
JP6118758B2 (ja) 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP5693438B2 (ja) 基板処理装置、基板処理方法および記憶媒体
JP7197376B2 (ja) 基板処理方法及び基板処理装置
JP6410694B2 (ja) 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6117041B2 (ja) 液処理方法、液処理装置および記憶媒体
JP2014130935A (ja) 基板処理装置を洗浄するための洗浄治具および洗浄方法、および基板処理システム
JP7138539B2 (ja) 基板処理装置及び基板処理方法
JP6460947B2 (ja) 基板処理方法、基板処理装置および記憶媒体
JP6301281B2 (ja) 基板液処理方法、基板液処理装置および記憶媒体
JP2019016654A (ja) 基板処理装置、基板処理方法及び記憶媒体
JP6569574B2 (ja) 基板処理装置、基板処理方法及び記憶媒体
JP2015015453A (ja) 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP6400766B2 (ja) 液処理方法、液処理装置および記憶媒体
JP5747842B2 (ja) 液処理装置、液処理方法及び記憶媒体
JP7292120B2 (ja) 基板処理方法および基板処理装置
KR20180034229A (ko) 기판 처리 방법 및 기판 처리 장치
KR102408472B1 (ko) 기판액 처리 방법 및 기판액 처리 장치
JP2018129476A (ja) 基板処理装置
JP2023144107A (ja) 基板処理装置、および基板処理方法
JP5905666B2 (ja) 基板処理方法および基板処理装置
JP2019160890A (ja) 基板処理装置、基板液処理方法およびノズル

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170210

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20171228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180329

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180417

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180430

R150 Certificate of patent or registration of utility model

Ref document number: 6341035

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250