JP6338572B2 - 有機エレクトロニクス用のフェナセン化合物 - Google Patents

有機エレクトロニクス用のフェナセン化合物 Download PDF

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JP6338572B2
JP6338572B2 JP2015510912A JP2015510912A JP6338572B2 JP 6338572 B2 JP6338572 B2 JP 6338572B2 JP 2015510912 A JP2015510912 A JP 2015510912A JP 2015510912 A JP2015510912 A JP 2015510912A JP 6338572 B2 JP6338572 B2 JP 6338572B2
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organic
printing
mmol
compounds
thin film
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JP2015518492A5 (enExample
JP2015518492A (ja
Inventor
デッツ フローリアン
デッツ フローリアン
ヴァイツ トーマス
ヴァイツ トーマス
ジアオ チョンジュン
ジアオ チョンジュン
宙幹 野口
宙幹 野口
スウィーメン アン
スウィーメン アン
ジョウ ミー
ジョウ ミー
伊織 土井
伊織 土井
クマール ミシュラ アショク
クマール ミシュラ アショク
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/52—Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/78—Benzo [b] furans; Hydrogenated benzo [b] furans
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/87—Benzo [c] furans; Hydrogenated benzo [c] furans
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/72—Benzo[c]thiophenes; Hydrogenated benzo[c]thiophenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Photovoltaic Devices (AREA)
JP2015510912A 2012-05-07 2013-04-29 有機エレクトロニクス用のフェナセン化合物 Expired - Fee Related JP6338572B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261643358P 2012-05-07 2012-05-07
EP12166922.0 2012-05-07
US61/643,358 2012-05-07
EP12166922 2012-05-07
PCT/IB2013/053379 WO2013168048A1 (en) 2012-05-07 2013-04-29 Phenacene compounds for organic electronics

Publications (3)

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JP2015518492A JP2015518492A (ja) 2015-07-02
JP2015518492A5 JP2015518492A5 (enExample) 2016-06-23
JP6338572B2 true JP6338572B2 (ja) 2018-06-06

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JP2015510912A Expired - Fee Related JP6338572B2 (ja) 2012-05-07 2013-04-29 有機エレクトロニクス用のフェナセン化合物

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US (1) US9231215B2 (enExample)
EP (1) EP2847166B1 (enExample)
JP (1) JP6338572B2 (enExample)
KR (1) KR102072538B1 (enExample)
CN (1) CN104302622B (enExample)
TW (1) TWI589580B (enExample)
WO (1) WO2013168048A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6284822B2 (ja) * 2013-05-13 2018-02-28 株式会社Adeka ピセン誘導体、光電変換材料及び光電変換素子
JP2015122437A (ja) * 2013-12-24 2015-07-02 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
JP6474276B2 (ja) * 2014-02-27 2019-02-27 株式会社Adeka ピセノジチオフェン化合物、有機半導体材料、有機半導体層、有機半導体素子
JP6110802B2 (ja) * 2014-03-07 2017-04-05 富士フイルム株式会社 薄膜トランジスタ
JP6239457B2 (ja) * 2014-07-18 2017-11-29 富士フイルム株式会社 有機半導体膜形成用組成物、及び、有機半導体素子の製造方法
KR102417717B1 (ko) 2014-08-18 2022-07-07 주식회사 클랩 결정질 유기 반도체 물질을 제조하는 방법
CN106661048B (zh) * 2014-10-21 2020-12-08 株式会社艾迪科 苉衍生物、光电转换材料及光电转换元件
WO2016071140A1 (en) * 2014-11-04 2016-05-12 Basf Se Phenacene compounds for organic electronics
JP6363732B2 (ja) 2014-11-25 2018-07-25 富士フイルム株式会社 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、化合物、並びに、有機半導体膜
EP3270430B1 (en) 2015-03-13 2020-12-09 FUJIFILM Corporation Organic semiconductor film formation composition, organic thin film transistor, electronic paper, and display device
CN107836044A (zh) * 2015-06-30 2018-03-23 富士胶片株式会社 光电转换元件及利用该光电转换元件的太阳能电池
CN109776568B (zh) * 2019-03-20 2020-07-28 湖南科技大学 一种轴对称的六元桥环萘核小分子受体材料及其制备方法和应用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE302853B (enExample) * 1963-12-12 1968-08-05 Dow Corning
WO2006086082A2 (en) 2004-12-23 2006-08-17 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
WO2007075748A2 (en) 2005-12-20 2007-07-05 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
JP4499770B2 (ja) 2007-09-06 2010-07-07 富士フイルム株式会社 偏光制御システム及びプロジェクタ
KR20110058787A (ko) * 2008-08-29 2011-06-01 이데미쓰 고산 가부시키가이샤 유기 박막 트랜지스터용 화합물 및 그것을 사용한 유기 박막 트랜지스터
KR20100074081A (ko) * 2008-12-23 2010-07-01 (주)루미나노 신규 유기 반도체 화합물, 그의 제조 방법, 상기를 포함하는 유기 반도체 조성물, 유기 반도체 박막 및 소자
JP2010177637A (ja) * 2009-02-02 2010-08-12 Mitsui Chemicals Inc 有機トランジスタ
JP2010205983A (ja) * 2009-03-04 2010-09-16 Mitsui Chemicals Inc 有機トランジスタ
KR101117722B1 (ko) * 2009-08-28 2012-03-07 삼성모바일디스플레이주식회사 유기 발광 소자

Also Published As

Publication number Publication date
TWI589580B (zh) 2017-07-01
KR20150013489A (ko) 2015-02-05
US9231215B2 (en) 2016-01-05
WO2013168048A1 (en) 2013-11-14
KR102072538B1 (ko) 2020-02-03
EP2847166A1 (en) 2015-03-18
CN104302622A (zh) 2015-01-21
US20150126751A1 (en) 2015-05-07
EP2847166A4 (en) 2016-01-06
TW201406764A (zh) 2014-02-16
JP2015518492A (ja) 2015-07-02
CN104302622B (zh) 2016-10-12
EP2847166B1 (en) 2021-03-24

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