CN104302622B - 用于有机电子器件的非那省化合物 - Google Patents

用于有机电子器件的非那省化合物 Download PDF

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Publication number
CN104302622B
CN104302622B CN201380023973.0A CN201380023973A CN104302622B CN 104302622 B CN104302622 B CN 104302622B CN 201380023973 A CN201380023973 A CN 201380023973A CN 104302622 B CN104302622 B CN 104302622B
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China
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alkyl
organic
printing
compounds
mmol
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Expired - Fee Related
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CN201380023973.0A
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English (en)
Chinese (zh)
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CN104302622A (zh
Inventor
F·德兹
T·魏茨
C·焦
野口博义
A·斯维蒙
M·周
D·艾欧里
A·K·米什拉
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Clap Co Ltd
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/52—Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/78—Benzo [b] furans; Hydrogenated benzo [b] furans
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D307/87—Benzo [c] furans; Hydrogenated benzo [c] furans
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/72—Benzo[c]thiophenes; Hydrogenated benzo[c]thiophenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN201380023973.0A 2012-05-07 2013-04-29 用于有机电子器件的非那省化合物 Expired - Fee Related CN104302622B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261643358P 2012-05-07 2012-05-07
EP12166922 2012-05-07
EP12166922.0 2012-05-07
US61/643,358 2012-05-07
PCT/IB2013/053379 WO2013168048A1 (en) 2012-05-07 2013-04-29 Phenacene compounds for organic electronics

Publications (2)

Publication Number Publication Date
CN104302622A CN104302622A (zh) 2015-01-21
CN104302622B true CN104302622B (zh) 2016-10-12

Family

ID=49550249

Family Applications (1)

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CN201380023973.0A Expired - Fee Related CN104302622B (zh) 2012-05-07 2013-04-29 用于有机电子器件的非那省化合物

Country Status (7)

Country Link
US (1) US9231215B2 (enExample)
EP (1) EP2847166B1 (enExample)
JP (1) JP6338572B2 (enExample)
KR (1) KR102072538B1 (enExample)
CN (1) CN104302622B (enExample)
TW (1) TWI589580B (enExample)
WO (1) WO2013168048A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6284822B2 (ja) * 2013-05-13 2018-02-28 株式会社Adeka ピセン誘導体、光電変換材料及び光電変換素子
JP2015122437A (ja) * 2013-12-24 2015-07-02 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
JP6474276B2 (ja) * 2014-02-27 2019-02-27 株式会社Adeka ピセノジチオフェン化合物、有機半導体材料、有機半導体層、有機半導体素子
JP6110802B2 (ja) * 2014-03-07 2017-04-05 富士フイルム株式会社 薄膜トランジスタ
JP6239457B2 (ja) * 2014-07-18 2017-11-29 富士フイルム株式会社 有機半導体膜形成用組成物、及び、有機半導体素子の製造方法
EP3183757B1 (en) 2014-08-18 2022-05-04 CLAP Co., Ltd. Organic semiconductor composition comprising liquid medium
US10074804B2 (en) 2014-10-21 2018-09-11 Adeka Corporation Picene derivative, photoelectric material, and photoelectric device
WO2016071140A1 (en) * 2014-11-04 2016-05-12 Basf Se Phenacene compounds for organic electronics
WO2016084731A1 (ja) 2014-11-25 2016-06-02 富士フイルム株式会社 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、化合物、並びに、有機半導体膜
JP6484700B2 (ja) 2015-03-13 2019-03-13 富士フイルム株式会社 有機半導体膜形成用組成物、有機薄膜トランジスタ、電子ペーパー、および、ディスプレイデバイス
EP3319136A4 (en) * 2015-06-30 2018-06-20 FUJI-FILM Corporation Photoelectric conversion element, and solar cell using same
CN109776568B (zh) * 2019-03-20 2020-07-28 湖南科技大学 一种轴对称的六元桥环萘核小分子受体材料及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1027577A (en) * 1963-12-12 1966-04-27 Dow Corning Organo silicon polyimides
US20110253944A1 (en) * 2008-12-23 2011-10-20 Luminano Co., Ltd. Novel organic semiconductor compound, method for preparing same, and organic semiconductor composition, and organic semiconductor thin film and element containing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1839339A2 (en) 2004-12-23 2007-10-03 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
US7678463B2 (en) 2005-12-20 2010-03-16 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
JP4499770B2 (ja) 2007-09-06 2010-07-07 富士フイルム株式会社 偏光制御システム及びプロジェクタ
WO2010024388A1 (ja) * 2008-08-29 2010-03-04 出光興産株式会社 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ
JP2010177637A (ja) * 2009-02-02 2010-08-12 Mitsui Chemicals Inc 有機トランジスタ
JP2010205983A (ja) * 2009-03-04 2010-09-16 Mitsui Chemicals Inc 有機トランジスタ
KR101117722B1 (ko) * 2009-08-28 2012-03-07 삼성모바일디스플레이주식회사 유기 발광 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1027577A (en) * 1963-12-12 1966-04-27 Dow Corning Organo silicon polyimides
US20110253944A1 (en) * 2008-12-23 2011-10-20 Luminano Co., Ltd. Novel organic semiconductor compound, method for preparing same, and organic semiconductor composition, and organic semiconductor thin film and element containing the same

Also Published As

Publication number Publication date
JP2015518492A (ja) 2015-07-02
EP2847166A4 (en) 2016-01-06
US20150126751A1 (en) 2015-05-07
US9231215B2 (en) 2016-01-05
TW201406764A (zh) 2014-02-16
EP2847166B1 (en) 2021-03-24
WO2013168048A1 (en) 2013-11-14
JP6338572B2 (ja) 2018-06-06
KR20150013489A (ko) 2015-02-05
KR102072538B1 (ko) 2020-02-03
EP2847166A1 (en) 2015-03-18
TWI589580B (zh) 2017-07-01
CN104302622A (zh) 2015-01-21

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Address after: Seoul, South Kerean

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