JP6328863B1 - マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 - Google Patents

マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 Download PDF

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JP6328863B1
JP6328863B1 JP2017563152A JP2017563152A JP6328863B1 JP 6328863 B1 JP6328863 B1 JP 6328863B1 JP 2017563152 A JP2017563152 A JP 2017563152A JP 2017563152 A JP2017563152 A JP 2017563152A JP 6328863 B1 JP6328863 B1 JP 6328863B1
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phase shift
transmission layer
layer
thickness
film
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JPWO2018037864A1 (ja
Inventor
浩之 岩下
浩之 岩下
淳志 松本
淳志 松本
野澤　順
順 野澤
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2017563152A 2016-08-26 2017-08-02 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 Active JP6328863B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016165518 2016-08-26
JP2016165518 2016-08-26
PCT/JP2017/028045 WO2018037864A1 (ja) 2016-08-26 2017-08-02 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Related Child Applications (1)

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JP2018077550A Division JP6999482B2 (ja) 2016-08-26 2018-04-13 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

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JP6328863B1 true JP6328863B1 (ja) 2018-05-23
JPWO2018037864A1 JPWO2018037864A1 (ja) 2018-08-30

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JP2017563152A Active JP6328863B1 (ja) 2016-08-26 2017-08-02 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP2018077550A Active JP6999482B2 (ja) 2016-08-26 2018-04-13 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

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US (1) US10942440B2 (enExample)
JP (2) JP6328863B1 (enExample)
KR (1) KR102341792B1 (enExample)
CN (1) CN109643056B (enExample)
SG (1) SG11201901301SA (enExample)
TW (1) TWI760353B (enExample)
WO (1) WO2018037864A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10202112738PA (en) 2017-06-21 2021-12-30 Hoya Corp Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
JP6557381B1 (ja) * 2018-05-08 2019-08-07 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びフォトマスク
JP7109996B2 (ja) * 2018-05-30 2022-08-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6896694B2 (ja) * 2018-12-25 2021-06-30 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
TWI707195B (zh) 2020-02-14 2020-10-11 力晶積成電子製造股份有限公司 相位轉移光罩的製造方法
CN111636048B (zh) * 2020-05-12 2021-05-07 清华大学 一种掩膜及其制造方法、二维材料薄膜图案制造方法
TWI880297B (zh) * 2023-04-03 2025-04-11 韓商Ｓ＆Ｓ技術股份有限公司 用於ｅｕｖ微影之相移空白遮罩及光遮罩
CN117872671A (zh) * 2023-12-15 2024-04-12 广州新锐光掩模科技有限公司 调整相移掩模版相位差和穿透率的方法及系统

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262688A (ja) * 1995-03-24 1996-10-11 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス、位相シフトフォトマスク、及びそれらの製造方法。
JP2002296758A (ja) * 2001-03-30 2002-10-09 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2004062135A (ja) * 2002-07-30 2004-02-26 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法、ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2005128278A (ja) * 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
US20060121361A1 (en) * 2004-12-03 2006-06-08 Micron Technology, Inc. Reticles and methods of forming reticles
JP2014137388A (ja) * 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2014197190A (ja) * 2013-03-08 2014-10-16 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP2016018192A (ja) * 2014-07-11 2016-02-01 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

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US5514499A (en) 1993-05-25 1996-05-07 Kabushiki Kaisha Toshiba Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
JP3115185B2 (ja) 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
US7060394B2 (en) 2001-03-30 2006-06-13 Hoya Corporation Halftone phase-shift mask blank and halftone phase-shift mask
JP2005208660A (ja) 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
US9625806B2 (en) * 2013-01-15 2017-04-18 Hoya Corporation Mask blank, phase-shift mask, and method for manufacturing the same
JP6264238B2 (ja) 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
KR101759046B1 (ko) * 2014-03-18 2017-07-17 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP2016035559A (ja) 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262688A (ja) * 1995-03-24 1996-10-11 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス、位相シフトフォトマスク、及びそれらの製造方法。
JP2002296758A (ja) * 2001-03-30 2002-10-09 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2004062135A (ja) * 2002-07-30 2004-02-26 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法、ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2005128278A (ja) * 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
US20060121361A1 (en) * 2004-12-03 2006-06-08 Micron Technology, Inc. Reticles and methods of forming reticles
JP2014137388A (ja) * 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2014197190A (ja) * 2013-03-08 2014-10-16 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP2016018192A (ja) * 2014-07-11 2016-02-01 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

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Publication number Publication date
KR20190041461A (ko) 2019-04-22
CN109643056A (zh) 2019-04-16
JP2018141996A (ja) 2018-09-13
TWI760353B (zh) 2022-04-11
KR102341792B1 (ko) 2021-12-21
CN109643056B (zh) 2022-05-03
JP6999482B2 (ja) 2022-01-18
TW201820025A (zh) 2018-06-01
US10942440B2 (en) 2021-03-09
US20190187551A1 (en) 2019-06-20
JPWO2018037864A1 (ja) 2018-08-30
SG11201901301SA (en) 2019-03-28
WO2018037864A1 (ja) 2018-03-01

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