WO2018037864A1 - マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 - Google Patents
マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 Download PDFInfo
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- WO2018037864A1 WO2018037864A1 PCT/JP2017/028045 JP2017028045W WO2018037864A1 WO 2018037864 A1 WO2018037864 A1 WO 2018037864A1 JP 2017028045 W JP2017028045 W JP 2017028045W WO 2018037864 A1 WO2018037864 A1 WO 2018037864A1
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- phase shift
- transmission layer
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- 230000005540 biological transmission Effects 0.000 claims description 353
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Definitions
- the present invention relates to a mask blank, a phase shift mask manufactured using the mask blank, a manufacturing method thereof, and a semiconductor device manufacturing method using the phase shift mask.
- a fine pattern is formed using a photolithography method.
- a transfer mask is used.
- a halftone phase shift mask has been used as one of transfer masks.
- phase shift film made of molybdenum silicide (MoSi) -based material is widely used.
- MoSi molybdenum silicide
- a phase shift film made of a molybdenum silicide-based material has low resistance (so-called ArF light resistance) to exposure light (wavelength 193 nm) of an ArF excimer laser.
- Patent Document 1 As a phase shift film having high resistance to exposure light of an ArF excimer laser and high transmittance, a single-layer phase shift film made of a silicon nitride material (that is, a material made of silicon and nitrogen) or A single layer phase shift film made of a silicon oxynitride material (ie, a material made of silicon, nitrogen and oxygen) is disclosed.
- Patent Document 2 discloses a halftone phase shift mask provided with a phase shift film having a two-layer structure composed of a silicon nitride layer and a silicon oxide layer arranged in this order from the translucent substrate side.
- Patent Document 3 discloses a halftone type phase shift provided with a multi-layered phase shift film having a plurality of pairs of laminated structures each composed of a silicon nitride layer and a silicon oxide layer arranged in order from the translucent substrate side. A mask is disclosed.
- the transmittance for ArF excimer laser exposure light (hereinafter referred to as ArF exposure light) is increased only to about 18%. I can't. When oxygen is introduced into silicon nitride, the transmittance can be increased.
- ArF exposure light When oxygen is introduced into silicon nitride, the transmittance can be increased.
- etching selectivity with a light-transmitting substrate made of a material mainly composed of silicon oxide can be improved when patterning the phase shift film by dry etching. There is a problem of becoming smaller. In addition, there is a problem that the correction rate ratio with the translucent substrate becomes small when correcting the EB defect.
- a non-excited fluorine-based gas such as XeF 2 is supplied to the black defect portion of the thin film pattern while irradiating the black defect portion with an electron beam, thereby making the black defect portion volatile.
- This is a technology that removes it by changing it to fluoride.
- a problem in the case of using a single-layer phase shift film made of a silicon oxynitride material is that, as disclosed in Patent Document 2, a silicon nitride layer (low transmission layer) arranged in order from the translucent substrate side, and This can be solved by using a phase shift film having a two-layer structure composed of a silicon oxide layer (highly permeable layer).
- the phase shift film is constituted by such a two-layer structure, the respective thicknesses of the silicon nitride layer and the silicon oxide layer are optimized based on the respective refractive indexes n and extinction coefficients k of the silicon nitride layer and the silicon oxide layer.
- phase shift film is constituted by a two-layer structure of a silicon nitride layer and a silicon oxide layer, each of the silicon nitride layer and the silicon oxide layer is thick (particularly, the silicon oxide layer is thick).
- phase shift film having a two-layer structure A problem in the case of using the above-mentioned phase shift film having a two-layer structure is that a silicon nitride layer (low transmission layer) and a silicon oxide layer sequentially arranged from the light transmitting substrate side as disclosed in Patent Document 3
- the thickness of the silicon nitride layer is the same for each of the plurality of sets
- the thickness of the silicon oxide layer is the same for each of the plurality of sets.
- phase shift film disclosed in Patent Document 3 is suitable when an F2 excimer laser having a wavelength of 157 nm is used as an exposure light source, and a phase shift using an ArF excimer laser as an exposure light source. This structure is not suitable for a film.
- the inventors of the present invention have a multilayer structure having a plurality of sets of a laminated structure composed of a low transmission layer made of a silicon nitride-based material and a high transmission layer made of a silicon oxide-based material arranged in order from the light-transmitting substrate side.
- a configuration of a phase shift film that is a phase shift film and that is suitable when an ArF excimer laser is used as an exposure light source was studied.
- it has a two-layer structure composed of a low transmission layer made of a silicon nitride-based material and a high transmission layer made of a silicon oxide-based material, which are sequentially arranged from the light-transmitting substrate side, and uses an ArF excimer laser as an exposure light source.
- the optimum thickness of each of the low transmission layer and the high transmission layer was determined by simulation. The simulation was performed so that the phase difference of the phase shift film with respect to the ArF exposure light was within a range of 177 ⁇ 0.5 degrees, and the transmittance of the phase shift film with respect to the ArF exposure light was within a range of 30 ⁇ 2% (hereinafter referred to as the following).
- the refractive index n of the low transmission layer with respect to the wavelength of ArF exposure light is 2.58, the extinction coefficient k is 0.36, and the refractive index n of the high transmission layer with respect to the wavelength of ArF exposure light is 1. 59, performed under the condition that the extinction coefficient k is 0.00 (hereinafter simply referred to as the refractive index n, it refers to the refractive index n for ArF exposure light, and is simply expressed as the extinction coefficient k.
- the extinction coefficient k with respect to ArF exposure light is simply expressed as transmittance.
- a phase shift film having a four-layer structure having two sets of a laminated structure composed of a low transmission layer and a high transmission layer arranged in this order from the translucent substrate side was formed.
- the thickness of the low transmission layer is the same in each group
- the thickness of the high transmission layer is the same in each group.
- the total thickness of the low transmission layers arranged in each group is equivalent to the thickness of the low transmission layer obtained in the above simulation
- the total thickness of the high transmission layers arranged in each group is This is equivalent to the thickness of the highly transmissive layer obtained by the simulation. That is, the thickness of the low transmission layer obtained by the above simulation is evenly distributed to each set, and the thickness of the high transmission layer obtained by the above simulation is evenly distributed to each set.
- the refractive index n of the low transmission layer arranged in each group is 2.58, the extinction coefficient k is 0.36, and the refractive index n of the high transmission layer arranged in each group is 1.59, the extinction coefficient.
- the attenuation coefficient k was 0.00.
- the transmittance of the phase shift film was 30 ⁇ 2%, which is a simulation condition. It has been found that there is a problem of a significant drop from the range. Further, it has been found that the phase difference of the phase shift film is outside the range of 177 ⁇ 0.5 degrees which is a simulation condition.
- the present invention has been made in view of the above-described problems, and a phase shift film having a transmittance of 20% or more, which is difficult to realize with a single layer phase shift film made of a silicon nitride material, is made transparent.
- a mask blank provided with such a phase shift film realized by a structure having two or more sets of laminated structures each composed of a low transmission layer and a high transmission layer arranged in order from the optical substrate side.
- an object of this invention is to provide the phase shift mask manufactured using this mask blank.
- an object of the present invention is to provide a method for manufacturing such a phase shift mask.
- an object of the present invention is to provide a method of manufacturing a semiconductor device using such a phase shift mask.
- the present invention has the following configuration.
- (Configuration 1) A mask blank provided with a phase shift film on a translucent substrate,
- the phase shift film has a function of transmitting exposure light of ArF excimer laser with a transmittance of 20% or more
- the phase shift film includes a structure having two or more pairs of a laminated structure composed of a low transmission layer and a high transmission layer arranged in order from the translucent substrate side,
- the low-permeability layer contains silicon and nitrogen, and is formed of a material having a nitrogen content of 50 atomic% or more
- the high transmission layer contains silicon and oxygen, and is formed of a material having an oxygen content of 50 atomic% or more
- the thickness of the high transmission layer provided on the top is thicker than the thickness of the high transmission layer provided on the top other than the top,
- the mask blank characterized in that the thickness of the low-transmitting layer is thicker than the thickness of the high-transmitting layer provided on the other than the uppermost layer.
- a mask blank provided with a phase shift film on a translucent substrate The phase shift film has a function of transmitting exposure light of ArF excimer laser with a transmittance of 20% or more
- the phase shift film includes a structure having two or more pairs of a laminated structure composed of a low transmission layer and a high transmission layer arranged in order from the translucent substrate side,
- the low transmission layer is formed of a material containing silicon and nitrogen
- the high transmission layer is formed of a material containing silicon and oxygen
- the low-permeability layer has a higher nitrogen content than the high-permeability layer
- the high transmission layer has a higher oxygen content than the low transmission layer
- the thickness of the high transmission layer provided on the top is thicker than the thickness of the high transmission layer provided on the top other than the top,
- the mask blank characterized in that the thickness of the low-transmitting layer is thicker than the thickness of the high-transmitting layer provided on the other than the uppermost layer.
- the low-permeability layer is formed of a material consisting of silicon and nitrogen, or a material consisting of one or more elements selected from a metalloid element and a nonmetallic element, and silicon and nitrogen.
- the highly transmissive layer is formed of a material composed of silicon and oxygen, or a material composed of one or more elements selected from a metalloid element and a nonmetallic element, and silicon and oxygen.
- the low-permeability layer is formed of a material consisting of silicon and nitrogen,
- the mask blank according to Configuration 1 or 2 wherein the highly transmissive layer is formed of a material made of silicon and oxygen.
- the low transmission layer has a refractive index n at a wavelength of the exposure light of 2.0 or more, and an extinction coefficient k at a wavelength of the exposure light of 0.2 or more.
- the high transmittance layer has a refractive index n of less than 2.0 at the wavelength of the exposure light, and an extinction coefficient k at the wavelength of the exposure light of 0.1 or less.
- a phase shift mask provided with a phase shift film having a transfer pattern on a translucent substrate The phase shift film has a function of transmitting exposure light of ArF excimer laser with a transmittance of 20% or more
- the phase shift film includes a structure having two or more pairs of a laminated structure composed of a low transmission layer and a high transmission layer arranged in order from the translucent substrate side,
- the low-permeability layer contains silicon and nitrogen, and is formed of a material having a nitrogen content of 50 atomic% or more
- the high transmission layer contains silicon and oxygen, and is formed of a material having an oxygen content of 50 atomic% or more,
- the thickness of the high transmission layer provided on the top is thicker than the thickness of the high transmission layer provided on the top other than the top,
- a phase shift mask provided with a phase shift film having a transfer pattern on a translucent substrate The phase shift film has a function of transmitting exposure light of ArF excimer laser with a transmittance of 20% or more
- the phase shift film includes a structure having two or more pairs of a laminated structure composed of a low transmission layer and a high transmission layer arranged in order from the translucent substrate side,
- the low transmission layer is formed of a material containing silicon and nitrogen
- the high transmission layer is formed of a material containing silicon and oxygen
- the low-permeability layer has a higher nitrogen content than the high-permeability layer,
- the high transmission layer has a higher oxygen content than the low transmission layer,
- the thickness of the high transmission layer provided on the top is thicker than the thickness of the high transmission layer provided on the top other than the top,
- the low-permeability layer is formed of a material consisting of silicon and nitrogen, or a material consisting of one or more elements selected from a metalloid element and a nonmetallic element, and silicon and nitrogen.
- the high transmission layer is formed of a material consisting of silicon and oxygen, or a material consisting of one or more elements selected from a metalloid element and a nonmetallic element, and silicon and oxygen.
- the low-permeability layer is formed of a material consisting of silicon and nitrogen, 10.
- the low transmission layer has a refractive index n at a wavelength of the exposure light of 2.0 or more, and an extinction coefficient k at a wavelength of the exposure light of 0.2 or more.
- the high transmittance layer has a refractive index n of less than 2.0 at a wavelength of the exposure light, and an extinction coefficient k at a wavelength of the exposure light of 0.1 or less.
- the phase shift mask according to any one of the above.
- (Configuration 15) A method of manufacturing a phase shift mask using the mask blank described in Structure 7, Forming a transfer pattern on the light shielding film by dry etching; Forming a transfer pattern on the phase shift film by dry etching using the light-shielding film having the transfer pattern as a mask; Forming a pattern including a light shielding band on the light shielding film by dry etching using a resist film having a pattern including the light shielding band as a mask.
- the phase shift film has a function of transmitting the exposure light of ArF excimer laser with a transmittance of 20% or more, and the phase shift film is disposed in order from the translucent substrate side.
- the low permeable layer is formed of a material containing silicon and nitrogen, and the nitrogen content is 50 atomic% or more.
- the layer is formed of a material containing silicon and oxygen, and the oxygen content is 50 atomic% or more, and the thickness of the uppermost highly transmissive layer is other than the uppermost layer.
- permeability of the phase shift film with respect to the exposure light of ArF excimer laser can be made into 20% or more difficult to implement
- the transmittance of the phase shift film is set to 20% or more, a transfer pattern is formed on the phase shift film, and when the transfer pattern is exposed and transferred to a resist film on a semiconductor substrate, the phase shift at the boundary of the transfer pattern The effect becomes remarkable and the contrast of the transferred image can be increased.
- the phase shift film has a function of transmitting the ArF excimer laser exposure light with a transmittance of 20% or more, and the phase shift film is disposed in order from the translucent substrate side.
- the low-permeability layer has a higher nitrogen content than the high-permeability layer, and the high-permeability layer has a higher oxygen content than the low-permeability layer.
- permeability of the phase shift film with respect to the exposure light of ArF excimer laser can be made into 20% or more difficult to implement
- the transmittance of the phase shift film is set to 20% or more, a transfer pattern is formed on the phase shift film, and when the transfer pattern is exposed and transferred to a resist film on a semiconductor substrate, the phase shift at the boundary of the transfer pattern The effect becomes remarkable and the contrast of the transferred image can be increased.
- the phase shift mask of the present invention is characterized in that the phase shift film having a transfer pattern has the same configuration as the phase shift film of each mask blank of the present invention.
- a phase shift film having a two-layer structure including a low transmission layer made of a silicon nitride-based material and a high transmission layer made of a silicon oxide-based material arranged in order from the light-transmitting substrate side is reduced by simulation.
- the optimum thickness of each of the transmission layer and the high transmission layer was determined.
- a target phase difference (hereinafter referred to as a target phase difference) is set to a range of 177 ⁇ 0.5 degrees
- a target transmittance (hereinafter referred to as a target transmittance) is set to a range of 30 ⁇ 2%. did.
- the refractive index n of the low transmission layer is 2.58, the extinction coefficient k is 0.36, the refractive index n of the high transmission layer is 1.59, and the extinction coefficient k is 0.00. Performed under conditions.
- phase shift film cannot avoid the problem that the step on the pattern side wall tends to be large when the phase shift film is patterned by dry etching. Therefore, a multilayer structure phase shift film having a plurality of laminated structures each composed of a low transmission layer made of a silicon nitride-based material and a high transmission layer made of a silicon oxide-based material, which are sequentially arranged from the translucent substrate side investigated.
- the low transmission layer and the high transmission layer in reverse, in the dry etching using a fluorine-based gas performed when forming a pattern on the phase shift film, the high transmission layer and the light transmission layer in contact with the light transmission substrate are used. There may be a problem that it is difficult to obtain etching selectivity with the substrate.
- phase shift of a four-layer structure having two sets of laminated structures each composed of a low transmission layer made of a silicon nitride-based material and a high transmission layer made of a silicon oxide-based material arranged in this order from the light-transmitting substrate side A film was formed.
- the thickness of the low transmission layer was the same in each group, and the thickness of the high transmission layer was the same in each group.
- the total thickness of the low transmission layers arranged in each group is equivalent to the thickness of the low transmission layer obtained in the above simulation, and the total thickness of the high transmission layers arranged in each group is It was equivalent to the thickness of the high transmission layer obtained by the simulation.
- the thickness of the low transmission layer obtained by the above simulation is equally distributed to each group, and the thickness of the high transmission layer obtained by the above simulation is evenly distributed to each group.
- the refractive index n of the low transmission layer arranged in each group is 2.58, the extinction coefficient k is 0.36, and the refractive index n of the high transmission layer arranged in each group is 1.59.
- the extinction coefficient k was 0.00.
- “equivalent” means that the difference is within a manufacturing error range.
- phase shift film in which the thickness of such a high transmission layer is uniformly distributed to each set (hereinafter referred to as a uniform distribution type phase shift film) were measured, the transmittance of the phase shift film was It was found that the target transmittance at the time of simulation was greatly reduced from the range of 30 ⁇ 2%. It was also found that the phase difference of the phase shift film was outside the range of 177 ⁇ 0.5 degrees that is the target refractive index at the time of simulation.
- the present inventor under the condition that the total thickness of the high transmission layer arranged in each set is equal to the thickness of the high transmission layer obtained in the above simulation, A phase shift film having a four-layer structure in which the thickness of the high transmission layer provided on the top is different from the thickness of the high transmission layer provided other than the top (that is, the high transmission layer sandwiched between the low transmission layers). Formed. However, the thickness of the low transmission layer arranged in each group was equivalent to the uniform distribution type phase shift film.
- “equivalent” means that the difference is within a manufacturing error range.
- the thickness of the high transmission layer provided at the top is thicker than the thickness of the high transmission layer provided at other than the top, and the thickness of the low transmission layer is high transmission provided at other than the top.
- the transmittance of the phase shift film is set within the range of 30 ⁇ 2%, which is the target transmittance at the time of simulation. It has been found that the phase difference of the phase shift film can be in the range of 177 ⁇ 0.5 degrees which is the target phase difference at the time of simulation.
- the thickness of the high-permeability layer is evenly distributed to each set (equal distribution type)
- the high-permeability layer where the thickness of the high-permeability layer provided on the top is other than the top It was formed for a case where the thickness was greater than the thickness (top layer thick film type).
- the transmittance of the uniform distribution type phase shift film is greatly reduced from the range of 30 ⁇ 2%, which is the target transmittance at the time of simulation. It was found that the phase difference of the phase shift film was outside the range of 177 ⁇ 0.5 degrees which is the target phase difference at the time of simulation.
- the transmittance of the top layer thick film type phase shift film is set within the range of 30 ⁇ 2% which is the target transmittance at the time of simulation, and the top layer thick film type It was found that the phase difference of the phase shift film can be in the range of 177 ⁇ 0.5 degrees which is the target phase difference at the time of simulation.
- the target transmittance is in the range of 22 ⁇ 2%, the range of 33 ⁇ 2%, and the range of 36 ⁇ 2% as in the case where the target transmittance is in the range of 30 ⁇ 2%.
- a four-layer structure equally distributed type phase shift film, a four-layer structure top layer thick film type phase shift film, an eight-layer structure even distribution type phase shift film, And an uppermost thick film type phase shift film having an eight-layer structure was formed.
- the transmittance of the uniform distribution type phase shift film is greatly reduced from the range of the target transmittance at the time of simulation for each of the four-layer structure and the eight-layer structure. There was found.
- the phase difference of the uniform distribution type phase shift film is within a range of 177 ⁇ 0.5 degrees which is the target phase difference for each of the four-layer structure and the eight-layer structure in almost all cases of the target transmittance. It turned out to be outside. Further, the transmittance of the uppermost thick film type phase shift film is set to the target transmittance range during simulation, and the phase difference of the uppermost thick film type phase shift film is 177 ⁇ 0 which is the target phase difference during simulation. It has been found that it can be in the range of 5 degrees.
- the inventors of the present invention are the best in the phase shift film having a structure having two or more sets of laminated structures each composed of a low transmission layer and a high transmission layer arranged in order from the light transmitting substrate side.
- the thickness of the high transmission layer provided on the upper side is made thicker than the thickness of the low transmission layer provided other than the uppermost layer, and the thickness of the high transmission layer provided on the other side than the uppermost layer It came to the conclusion that there may be a case where the transmittance can be increased to 20% or more by increasing the thickness.
- the transmittance of the evenly distributed phase shift film is greatly reduced from the target transmittance range during simulation, and the phase difference is outside the range of 177 ⁇ 0.5 degrees which is the target phase difference during simulation.
- This is presumed to be due to the influence of multiple reflection caused by evenly distributing the low transmission layer and high transmission layer constituting the phase shift film to each set. That is, the thickness of the high transmission layer sandwiched between the two low transmission layers is larger in the uniform distribution type phase shift film than in the uppermost thick film type phase shift film.
- the phase difference between the part of the exposure light that multi-reflects within the layer and the exposure light that passes through the high-transmission layer without multi-reflection is increased, and the exposure light attenuates through the phase shift film due to the interference effect. This is presumably due to the increase in However, this inference is based on the estimation of the inventors at the time of filing, and does not limit the scope of the present invention.
- FIG. 1 is a cross-sectional view showing a configuration of a mask blank 100 according to an embodiment of the present invention.
- the mask blank 100 of the present invention is a mask blank provided with a phase shift film 2 on a translucent substrate 1, and the phase shift film 2 transmits ArF excimer laser exposure light with a transmittance of 20% or more.
- the phase shift film 2 includes a structure having two or more sets of a laminated structure including a low transmission layer 21 and a high transmission layer 22 arranged in order from the light transmitting substrate 1 side.
- the transmissive layer 21 is formed of a material containing silicon and nitrogen, and the nitrogen content is 50 atomic% or more.
- the high transmissive layer 22 contains silicon and oxygen, and the oxygen content is 50 atomic% or more.
- the thickness of the highly transmissive layer 22 formed on the uppermost layer is thicker than the thickness of the highly transmissive layer 22 other than the uppermost layer, and the thickness of the low transmissive layer 21 is other than the uppermost layer. Thicker than the thickness of the high transmission layer 22 provided It is characterized in.
- the mask blank 100 of the present invention is a mask blank provided with a phase shift film 2 on a translucent substrate 1, and the phase shift film 2 transmits ArF excimer laser exposure light with a transmittance of 20% or more.
- the phase shift film 2 includes a structure having two or more sets of a laminated structure including a low transmission layer 21 and a high transmission layer 22 arranged in order from the light transmitting substrate 1 side.
- the low transmission layer 21 is formed of a material containing silicon and nitrogen
- the high transmission layer 22 is formed of a material containing silicon and oxygen
- the low transmission layer 21 contains more nitrogen than the high transmission layer 22.
- the high transmission layer 22 has a larger amount of oxygen than the low transmission layer 21, and the thickness of the high transmission layer 22 provided on the uppermost layer is the same as that of the high transmission layer 22 provided on the uppermost layer. It is thicker than the thickness, and the thickness of the low transmission layer 21 is the highest Wherein the larger than the thickness of the highly transparent layer 22 provided on the outer.
- the thickness of the low transmission layer 21 may be the same or different in each group. Further, the composition of the low transmission layer 21 may be the same or different in each group. Moreover, the thickness of the highly transmissive layer 22 provided on the other than the top may be the same or different in each group. The composition of the high transmission layer 22 provided on the top may be the same as or different from the composition of the high transmission layer 22 provided on the top. Moreover, the composition of the highly transmissive layer 22 other than the top may be the same or different in each group.
- a mask blank 100 shown in FIG. 1 has a structure in which a phase shift film 2, a light shielding film 3, and a hard mask film 4 are laminated on a translucent substrate 1 in this order.
- the translucent substrate 1 can be formed of synthetic quartz glass, quartz glass, aluminosilicate glass, soda lime glass, low thermal expansion glass (SiO 2 —TiO 2 glass or the like) and the like.
- synthetic quartz glass has a high transmittance with respect to exposure light of an ArF excimer laser, and is particularly preferable as a material for forming a light-transmitting substrate of a mask blank.
- the phase shift film 2 has a function of transmitting ArF exposure light with a transmittance of 20% or more.
- a bright field mask (transfer mask having a high pattern aperture ratio) used for NTD (Negative Tone Development) is used in an exposure / development process for a resist film on a semiconductor substrate (wafer).
- NTD Near Tone Development
- the phase shift film 2 preferably has a transmittance with respect to ArF exposure light of 36% or less. If the transmittance exceeds 36%, the total thickness of the phase shift film becomes thick.
- the phase shift film 2 has a predetermined distance between the transmitted ArF exposure light and the ArF exposure light that has passed through the air by the same distance as the thickness of the phase shift film 2. It has a function of generating a phase difference.
- the phase difference is preferably in the range of 150 degrees to 200 degrees.
- the lower limit value of the phase difference in the phase shift film 2 is more preferably 160 degrees or more, and further preferably 170 degrees or more.
- the upper limit value of the phase difference in the phase shift film 2 is more preferably 190 degrees or less, and further preferably 180 degrees or less.
- the phase shift film 2 of the present invention includes a structure having two or more sets of laminated structures each composed of a low transmission layer 21 and a high transmission layer 22 arranged in order from the light transmitting substrate 1 side.
- the phase shift film 2 in FIG. 1 includes two sets of a laminated structure in which a low transmission layer 21 and a high transmission layer 22 are laminated in this order from the translucent substrate 1 side.
- a silicon-based film has a very small refractive index n for ArF exposure light and a large extinction coefficient k for ArF exposure light.
- the nitrogen content in the silicon-based film increases, the refractive index n tends to increase and the extinction coefficient k tends to decrease.
- the low transmission layer 21 contains a silicon and nitrogen, and the below-mentioned high transmission layer It is formed of a material having a nitrogen content higher than 22 or a material having a nitrogen content of 50 atomic% or more (hereinafter, these materials are collectively referred to as a silicon nitride material).
- the nitrogen content of the low transmission layer 21 is preferably 52 atomic% or more. Further, the nitrogen content of the low transmission layer 21 is preferably 57 atomic% or less, and more preferably 55 atomic% or less.
- the low-permeability layer 21 is a material made of silicon and nitrogen, or a material containing one or more elements selected from a metalloid element and a nonmetal element in a material consisting of silicon and nitrogen (that is, a metalloid element and a nonmetal). 1 or more elements selected from elements, and a material made of silicon and nitrogen.
- the low transmission layer 21 does not contain a transition metal that may cause a decrease in light resistance against ArF exposure light.
- it is desirable that the low-transmitting layer 21 does not contain any metal element other than the transition metal, since it cannot be denied that the light resistance to ArF exposure light may be reduced.
- the low transmission layer 21 may contain any metalloid element in addition to silicon. Among these metalloid elements, when one or more elements selected from boron, germanium, antimony, and tellurium are contained in the low transmission layer 21, it is preferable because the conductivity of silicon used as a sputtering target can be expected to be increased.
- the low-permeability layer 21 may contain any nonmetallic element in addition to nitrogen.
- the nonmetallic element means a substance containing a nonmetallic element (carbon, oxygen, phosphorus, sulfur, selenium, hydrogen), halogen (fluorine, chlorine, bromine, iodine, etc.) and a noble gas in a narrow sense.
- a nonmetallic element carbon, oxygen, phosphorus, sulfur, selenium, hydrogen
- halogen fluorine, chlorine, bromine, iodine, etc.
- a noble gas in a narrow sense.
- the low transmission layer 21 preferably has an oxygen content of 10 atomic% or less, more preferably 5 atomic% or less, and does not actively contain oxygen (by XPS (X-ray Photoelectron Spectroscopy) or the like).
- the translucent substrate 1 is generally formed of a material mainly composed of silicon oxide such as synthetic quartz glass.
- the low transmission layer 21 is disposed in contact with the surface of the light-transmitting substrate 1, if the layer contains oxygen, the difference between the composition of the silicon nitride material film containing oxygen and the composition of the light-transmitting substrate is small.
- etching selectivity is obtained between the low transmission layer 21 in contact with the transparent substrate 1 and the transparent substrate 1. The problem of becoming difficult may arise.
- the low-permeability layer 21 may contain a noble gas.
- the noble gas is an element that can increase the deposition rate and improve the productivity by being present in the deposition chamber when forming a thin film by reactive sputtering.
- this noble gas is turned into plasma and collides with the target, the target constituent element is ejected from the target, and a thin film is formed on the translucent substrate 1 while taking in the reactive gas in the middle.
- the noble gas in the film formation chamber is slightly taken in until the target constituent element jumps out of the target and adheres to the translucent substrate.
- Preferable noble gases required for this reactive sputtering include argon, krypton, and xenon.
- helium and neon having a small atomic weight can be actively incorporated into the thin film.
- the low transmission layer 21 is preferably formed of a material composed of silicon and nitrogen.
- the noble gas is an element that is difficult to detect even when a composition analysis such as RBS (Rutherford Backing Scattering Spectrometry) or XPS is performed on the thin film. For this reason, it can be considered that the material containing silicon and nitrogen includes a material containing a noble gas.
- a silicon-based film has a very small refractive index n for ArF exposure light and a large extinction coefficient k for ArF exposure light.
- the refractive index n tends to increase, although not as remarkable as when nitrogen is contained.
- the extinction coefficient k tends to be significantly smaller than when nitrogen is contained. For this reason, in order to ensure the phase difference calculated
- Is formed of a material having a high oxygen content or a material having an oxygen content of 50 atomic% or more are collectively referred to as a silicon oxide-based material.
- the oxygen content of the highly transmissive layer 22 is preferably 52 atomic% or more.
- the oxygen content of the highly transmissive layer 22 is preferably 67 atomic percent or less, and more preferably 65 atomic percent or less.
- the highly transmissive layer 22 includes a material made of silicon and oxygen, or a material containing one or more elements selected from a metalloid element and a nonmetal element in a material consisting of silicon and oxygen (that is, a metalloid element and a nonmetal). A material composed of one or more elements selected from elements, silicon, and oxygen).
- the highly transmissive layer 22 does not contain a transition metal that can cause a decrease in transmittance with respect to ArF exposure light and cause a decrease in light resistance with respect to ArF exposure light. Further, the highly transmissive layer 22 does not contain any metal element other than the transition metal, because it cannot be denied that the transmittance for ArF exposure light may decrease and the light resistance to ArF exposure light may decrease. It is desirable.
- the highly transmissive layer 22 may contain any metalloid element in addition to silicon. Among these metalloid elements, when one or more elements selected from boron, germanium, antimony, and tellurium are contained in the highly transmissive layer 22, it is preferable because the conductivity of silicon used as a sputtering target can be expected to be increased.
- the high transmission layer 22 may contain any nonmetallic element in addition to oxygen.
- the non-metallic element means a substance containing a non-metallic element (nitrogen, carbon, phosphorus, sulfur, selenium, hydrogen), halogen (fluorine, chlorine, bromine, iodine, etc.) and a noble gas in a narrow sense. Among these non-metallic elements, it is preferable to contain one or more elements selected from carbon, fluorine and hydrogen.
- the highly permeable layer 22 may contain a noble gas.
- the noble gas is an element that can increase the deposition rate and improve the productivity by being present in the deposition chamber when a thin film is formed by sputtering.
- Preferable noble gases required for this sputtering include argon, krypton, and xenon.
- helium and neon having a small atomic weight can be actively incorporated into the thin film.
- the high transmission layer 22 is preferably formed of a material made of silicon and oxygen.
- the noble gas is an element that is difficult to detect even if a composition analysis such as RBS or XPS is performed on the thin film. For this reason, it can be considered that the material containing silicon and oxygen includes a material containing a noble gas.
- the number of sets of the laminated structure composed of the low transmission layer 21 and the high transmission layer 22 in the phase shift film 2 is two or more (total of 4 layers).
- the number of sets of the laminated structure is preferably 10 sets (total 20 layers) or less, more preferably 9 sets (total 18 layers) or less, and further preferably 8 sets (total 16 layers) or less.
- the thickness of the high transmission layer 22 provided on the top is thicker than the thickness of the high transmission layer 22 provided on the other than the top (that is, the high transmission layer 22 sandwiched between the low transmission layers 21). Further, the thickness of the low transmission layer 21 is larger than the thickness of the high transmission layer 22 provided other than the uppermost layer.
- the thickness of the high transmission layer 22 provided at the top is equal to or less than the thickness of the high transmission layer 22 provided at other than the top, or the thickness of the low transmission layer 21 is provided at other than the top. When the thickness is less than or equal to the thickness of the high transmission layer 22, such a phase shift film 2 cannot obtain the required transmittance and phase difference.
- the thickness of the uppermost highly transmissive layer 22 is preferably 5 nm or more, and more preferably 7 nm or more.
- the thickness of the uppermost highly transmissive layer 22 is preferably 60 nm or less.
- the thickness of the low transmission layer 21 is preferably 30 nm or less, and more preferably 25 nm or less. If the thickness of the low transmission layer 21 exceeds 30 nm, a step is likely to occur on the pattern side wall during patterning of the phase shift film by dry etching. Further, the thickness of the low transmission layer 21 is preferably 5 nm or more, and more preferably 6 nm or more. When the thickness of the low transmission layer 21 is less than 5 nm, the total thickness of the low transmission layer 21 is reduced because the low transmission layer 21 is 10 layers or less. In this case, since the phase difference secured by the low transmission layer 21 becomes small, there is a possibility that a predetermined phase difference cannot be secured unless the film thickness of the uppermost high transmission layer 22 is significantly increased.
- the thickness of the highly transmissive layer 22 provided other than the uppermost layer is preferably 4 nm or less, and more preferably 3 nm or less. If the thickness of the highly transmissive layer 22 other than the uppermost layer exceeds 4 nm, a step is likely to occur on the pattern side wall during patterning of the phase shift film by dry etching. Further, the thickness of the highly transmissive layer 22 other than the uppermost layer is preferably 1 nm or more, and more preferably 1.5 nm or more. If the thickness of the highly transmissive layer 22 other than the uppermost layer is less than 1 nm, it is difficult to stably form the highly transmissive layer 22 other than the uppermost layer.
- each low transmission layer 21 may not be the same, but the difference in thickness between the low transmission layers 21 is preferably small.
- the difference in thickness between the low transmission layers 21 is preferably within a range of 20%, more preferably within a range of 10%, and even more preferably within a range of 5%.
- the thickness of each of the high transmissive layers 22 other than the uppermost layer may not be the same as long as the condition that the thickness of the uppermost highly transmissive layer 22 is thinner than the uppermost high transmissive layer 22 is satisfied. It is preferable that the difference in thickness between each highly transmissive layer 22 is small.
- each highly transmissive layer 22 is preferably within a range of 40%, more preferably within a range of 30%, and even more preferably within a range of 20%.
- the thickness of the highest transmission layer provided on the top is required to be greater than that of the thickest high transmission layer 22 among the highest transmission layers 22 provided on the top.
- the low transmission layer 21 preferably has a refractive index n with respect to ArF exposure light of 2.0 or more, more preferably 2.2 or more, and even more preferably 2.4 or more.
- the low transmission layer 21 preferably has a refractive index n with respect to ArF exposure light of 2.7 or less, and more preferably 2.6 or less. Further, the low transmission layer 21 preferably has an extinction coefficient k with respect to ArF exposure light of 0.2 or more.
- the refractive index n with respect to ArF exposure light is preferably less than 2.0, more preferably 1.9 or less, and even more preferably 1.8 or less.
- the high transmission layer 22 preferably has a refractive index n with respect to ArF exposure light of 1.4 or more, and more preferably 1.5 or more.
- the high transmission layer 22 preferably has an extinction coefficient k with respect to ArF exposure light of 0.1 or less.
- the high transmission layer 22 preferably has an extinction coefficient k with respect to ArF exposure light of 0 or more.
- the phase shift film 2 is constituted by a structure having two or more pairs of laminated structures each composed of a low transmission layer and a high transmission layer arranged in order from the light transmitting substrate side, the low transmission layer 21 and the high transmission layer When 22 is in the range of the refractive index n and the extinction coefficient k, respectively, it is easy to satisfy a predetermined phase difference and a predetermined transmittance for ArF exposure light, which are optical characteristics required for the phase shift film 2.
- the refractive index n and extinction coefficient k of a thin film are not determined only by the composition of the thin film.
- the film density and crystal state of the thin film are factors that influence the refractive index n and the extinction coefficient k. For this reason, various conditions when forming a thin film by sputtering are adjusted so that the thin film has a predetermined refractive index n and extinction coefficient k.
- the translucent substrate 1 is generally formed of a material mainly composed of silicon oxide such as synthetic quartz glass. Further, when forming the pattern by dry etching the phase shift film 2 comprising a low-permeability layer 21 made of silicon nitride material, the etching rate of the dry etching the material mainly containing silicon oxide is relatively small SF 6 It is common to use a fluorine-based gas such as In the phase shift film 2 of the present invention, since the low transmission layer 21 and the high transmission layer 22 are arranged in this order from the translucent substrate 1 side, a fluorine-based gas that is used when forming a pattern on the phase shift film In the dry etching by the etching, etching selectivity is obtained between the low transmission layer 21 in contact with the translucent substrate 1 and the translucent substrate 1.
- EB defect correction when an electron beam is irradiated to a black defect portion, at least one of Auger electrons, secondary electrons, characteristic X-rays, and backscattered electrons emitted from the irradiated portion is detected.
- the end point of the correction is detected by looking at the change. For example, when detecting Auger electrons emitted from a portion irradiated with an electron beam, changes in material composition are mainly observed by Auger electron spectroscopy (AES). When detecting secondary electrons, the surface shape change is mainly observed from the SEM image.
- AES Auger electron spectroscopy
- the translucent substrate 1 is generally formed of a material mainly composed of silicon oxide such as synthetic quartz glass.
- the phase shift film 2 of the present invention the low transmission layer 21 and the high transmission layer 22 are arranged in this order from the light transmitting substrate side, and therefore the end point between the phase shift film 2 and the light transmitting substrate 1. In detection, it can be determined by looking at a change from a decrease in the detection intensity of nitrogen to an increase in the detection intensity of oxygen as the correction proceeds.
- the low transmission layer 21 and the high transmission layer 22 are formed by sputtering. Any sputtering such as DC sputtering, RF sputtering, and ion beam sputtering is applicable. In the case of using a target with low conductivity (such as a silicon target or a silicon compound target that does not contain a metalloid element or has a low content), it is preferable to apply RF sputtering or ion beam sputtering. In consideration of the deposition rate, it is more preferable to apply RF sputtering.
- the mask blank 100 is manufactured by using a silicon target or a target made of a material containing at least one element selected from a semi-metal element and a non-metal element in silicon, in a sputtering gas containing a nitrogen-based gas and a noble gas.
- the highly transmissive layer 22 uses a silicon target or a target made of a material containing at least one element selected from a metalloid element and a nonmetal element in silicon, and reactive sputtering in a sputtering gas containing oxygen gas and noble gas. Can also be formed.
- the sputtering gas used in the low-permeability layer forming step has a transition mode in which the film formation tends to become unstable. It can be selected to be a so-called poison mode (reaction mode) that is larger than the range of the nitrogen gas mixture ratio.
- any gas can be applied as long as it contains nitrogen.
- a nitrogen-based gas that does not contain oxygen since it is preferable to keep the oxygen content low in the low-permeability layer 21, it is preferable to apply a nitrogen-based gas that does not contain oxygen, and it is more preferable to apply nitrogen gas (N 2 gas).
- nitrogen gas N 2 gas.
- Any noble gas can be used as the noble gas used in the low permeable layer forming step and the high permeable layer forming step. Preferred examples of the noble gas include argon, krypton, and xenon.
- helium and neon having a small atomic weight can be actively incorporated into the thin film.
- the light shielding film 3 is preferably provided on the phase shift film 2.
- an outer peripheral region of a region where a transfer pattern is formed (transfer pattern forming region) has an optical density (OD) of a predetermined value or more. This is to prevent the resist film from being affected by the exposure light transmitted through the outer peripheral region when the exposure apparatus is exposed and transferred to the resist film on the semiconductor substrate.
- the optical density is required to be at least greater than 2.0.
- the phase shift film 2 has a function of transmitting exposure light with a predetermined transmittance, and it is difficult to ensure the above optical density with the phase shift film 2 alone.
- the light shielding film 3 is laminated on the phase shift film 2 in order to secure an insufficient optical density at the stage of manufacturing the mask blank 100.
- the optical density in the laminated structure of the phase shift film 2 and the light shielding film 3 is preferably 2.5 or more, and more preferably 2.8 or more.
- the optical density in the laminated structure of the phase shift film 2 and the light shielding film 3 is preferably 4.0 or less.
- the light shielding film 3 can be applied to either a single layer structure or a laminated structure of two or more layers.
- each layer of the light-shielding film 3 having a single-layer structure and the light-shielding film 3 having a laminated structure of two or more layers may have a composition having substantially the same composition in the thickness direction of the film or the layers. The composition may be inclined.
- the light shielding film 3 is preferably formed of a material containing chromium.
- the material containing chromium forming the light-shielding film 3 include a material containing one or more elements selected from oxygen, nitrogen, carbon, boron, and fluorine in addition to chromium metal.
- a chromium-based material is etched with a mixed gas of a chlorine-based gas and an oxygen gas, but chromium metal does not have a very high etching rate with respect to this etching gas.
- the material for forming the light shielding film 3 is one or more selected from chromium, oxygen, nitrogen, carbon, boron and fluorine. It is preferable to use a material containing an element.
- you may make the material containing chromium which forms the light shielding film 3 contain 1 or more elements among indium, molybdenum, and tin. By including one or more elements of indium, molybdenum, and tin, the etching rate with respect to the mixed gas of chlorine gas and oxygen gas can be further increased.
- the other film is made of the material containing chromium.
- the light-shielding film 3 be formed of a material containing silicon.
- a material containing chromium is etched by a mixed gas of a chlorine-based gas and an oxygen gas, but a resist film formed of an organic material is easily etched by this mixed gas.
- a material containing silicon is generally etched with a fluorine-based gas or a chlorine-based gas.
- etching gases basically do not contain oxygen, the amount of reduction in the resist film formed of an organic material can be reduced as compared with the case of etching with a mixed gas of chlorine gas and oxygen gas. For this reason, the film thickness of the resist film can be reduced.
- the material containing silicon forming the light shielding film 3 may contain a transition metal or a metal element other than the transition metal. This is because, when the phase shift mask 200 is manufactured from the mask blank 100, the pattern formed by the light shielding film 3 is basically a pattern including a light shielding band in the outer peripheral region, which is ArF exposure as compared with the transfer pattern forming region. This is because it is rare that the integrated amount irradiated with light is small or the light-shielding film 3 remains in a fine pattern, and even if ArF light resistance is low, a substantial problem hardly occurs.
- the light shielding film 3 contains a transition metal
- the light shielding performance is greatly improved as compared with the case where no transition metal is contained, and the thickness of the light shielding film can be reduced.
- transition metals to be contained in the light shielding film 3 molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), chromium (Cr), hafnium (Hf), nickel (Ni), vanadium (V) , Zirconium (Zr), ruthenium (Ru), rhodium (Rh), niobium (Nb), palladium (Pd), or any one metal or an alloy of these metals.
- a material containing silicon and nitrogen, or a material containing one or more elements selected from a semi-metallic element and a non-metallic element is applied to a material consisting of silicon and nitrogen. May be.
- the mask blank 100 is formed of a material having etching selectivity with respect to an etching gas used when etching the light shielding film 3 on the light shielding film 3. More preferably, the hard mask film 4 is further laminated. Since the light-shielding film 3 has a function of ensuring a predetermined optical density, there is a limit to reducing its thickness. It is sufficient for the hard mask film 4 to have a film thickness that can function as an etching mask until dry etching for forming a pattern on the light shielding film 3 immediately below the hard mask film 4 is completed. Not subject to any restrictions.
- the thickness of the hard mask film 4 can be made much thinner than the thickness of the light shielding film 3.
- the resist film made of an organic material is sufficient to have a thickness sufficient to function as an etching mask until dry etching for forming a pattern on the hard mask film 4 is completed.
- the thickness of the resist film can be greatly reduced.
- the hard mask film 4 is preferably formed of the material containing silicon.
- the surface of the hard mask film 4 is subjected to HMDS (Hexamethyldisilazane) treatment to improve surface adhesion. It is preferable.
- the hard mask film 4 is more preferably formed of SiO 2 , SiN, SiON or the like.
- a material containing tantalum is also applicable as the material of the hard mask film 4 when the light shielding film 3 is formed of a material containing chromium.
- the material containing tantalum in this case examples include a material in which tantalum contains one or more elements selected from nitrogen, oxygen, boron, and carbon in addition to tantalum metal.
- the material include Ta, TaN, TaON, TaBN, TaBON, TaCN, TaCON, TaBCN, TaBOCN, and the like.
- the hard mask film 4 is preferably formed of the above-described material containing chromium.
- a material having etching selectivity for both the light-transmitting substrate 1 and the phase shift film 2 between the light-transmitting substrate 1 and the phase shift film 2 (a material containing chromium, for example, Cr, An etching stopper film made of CrN, CrC, CrO, CrON, CrC, etc.) may be formed.
- the etching stopper film may be formed of a material containing aluminum.
- a resist film made of an organic material is formed with a thickness of 100 nm or less in contact with the surface of the hard mask film 4.
- a transfer pattern (phase shift pattern) to be formed on the hard mask film 4 may be provided with SRAF (Sub-Resolution Assist Feature) having a line width of 40 nm.
- SRAF Sub-Resolution Assist Feature
- the resist film preferably has a film thickness of 80 nm or less.
- FIG. 2 shows a schematic cross-sectional view of a process of manufacturing the phase shift mask 200 from the mask blank 100 according to the embodiment of the present invention.
- the phase shift mask 200 of the present invention is a phase shift mask provided with a phase shift film 2 (phase shift pattern 2a) having a transfer pattern on a translucent substrate 1, and the phase shift film 2 includes ArF exposure light.
- the phase shift film 2 has a set of laminated structures including a low transmission layer 21 and a high transmission layer 22 arranged in this order from the translucent substrate 1 side. Including a structure having two or more sets, the low-permeability layer 21 contains silicon and nitrogen, and the high-permeability layer 22 contains silicon and oxygen. It is formed of a material having an oxygen content of 50 atomic% or more, and the thickness of the highly transmissive layer 22 provided on the top is thicker than the thickness of the highly transmissive layer 22 provided on the other than the top, and the low transmissive property. Layer 21 has a thickness other than the top. Wherein the larger than the thickness of the highly transparent layer 22 are.
- the phase shift mask 200 of the present invention is a phase shift mask provided with a phase shift film 2 (phase shift pattern 2a) having a transfer pattern on a translucent substrate 1, and the phase shift film 2 is composed of ArF.
- the phase shift film 2 has a function of transmitting exposure light with a transmittance of 20% or more, and the phase shift film 2 is a set of laminated layers composed of a low transmission layer 21 and a high transmission layer 22 arranged in this order from the translucent substrate 1 side.
- the low transmission layer 21 is formed of a material containing silicon and nitrogen
- the high transmission layer 22 is formed of a material containing silicon and oxygen
- the low transmission layer 21 is Nitrogen content is higher than that of the high transmission layer 22, and the high transmission layer 22 has a higher oxygen content than the low transmission layer 21, and the thickness of the high transmission layer 22 provided on the uppermost layer is other than the uppermost layer.
- the thickness of the high transmission layer 22 provided Ku the thickness of the low-permeability layer 21 is characterized by greater than the thickness of the highly transparent layer 22 provided in addition to the top.
- This phase shift mask 200 has the same technical features as the mask blank 100. Matters relating to the translucent substrate 1, the low transmission layer 21 and the high transmission layer 22 of the phase shift film 2, and the light shielding film 3 in the phase shift mask 200 are the same as in the mask blank 100.
- the method of manufacturing the phase shift mask 200 of the present invention uses the mask blank 100 described above, and includes a step of forming a transfer pattern on the light shielding film 3 by dry etching, and a light shielding film 3 (light shielding) having the transfer pattern.
- resist pattern 6b resist film having a pattern including a light shielding band as a mask.
- phase shift mask 200 when the transfer pattern is exposed and transferred onto the resist film on the semiconductor substrate, the phase shift effect at the boundary of the transfer pattern becomes remarkable, and the contrast of the transferred image can be increased.
- the phase shift mask 200 when the phase shift mask 200 is set on a mask stage of an exposure apparatus using an ArF excimer laser as an exposure light source, and the phase shift pattern 2a is exposed and transferred to the resist film on the semiconductor substrate, the resist film on the semiconductor substrate is also used.
- the pattern can be transferred with sufficient accuracy to meet the design specifications. For example, a fine pattern such as a contact hole can be easily transferred to a resist film on a semiconductor substrate by NTD (Negative Tone Development).
- phase shift mask 200 an example of a method of manufacturing the phase shift mask 200 will be described according to the manufacturing process shown in FIG.
- a material containing chromium is applied to the light shielding film 3
- a material containing silicon is applied to the hard mask film 4.
- a resist film is formed by spin coating in contact with the hard mask film 4 in the mask blank 100.
- a first pattern which is a transfer pattern (phase shift pattern) to be formed on the phase shift film 2
- a predetermined process such as a development process is further performed.
- a first resist pattern 5a is formed (see FIG. 2A).
- dry etching using a fluorine-based gas is performed using the first resist pattern 5a as a mask to form a first pattern (hard mask pattern 4a) on the hard mask film 4 (see FIG. 2B). .
- a resist film is formed on the mask blank 100 by a spin coating method.
- a second pattern which is a pattern including a light shielding band to be formed on the light shielding film 3 (light shielding pattern)
- a predetermined process such as a development process is further performed to form a light shielding pattern.
- a second resist pattern 6b is formed.
- dry etching using a mixed gas of chlorine-based gas and oxygen gas is performed using the second resist pattern 6b as a mask to form a second pattern (light-shielding pattern 3b) on the light-shielding film 3 (FIG. 2). (See (e)).
- the second resist pattern 6b is removed, and a predetermined process such as cleaning is performed to obtain the phase shift mask 200 (see FIG. 2F).
- the obtained phase shift mask 200 is a good one with few steps on the pattern side wall of the phase shift pattern 2a.
- the chlorine-based gas used in the dry etching is not particularly limited as long as it contains Cl.
- a chlorine-based gas Cl 2, SiCl 2, CHCl 3, CH 2 Cl 2, CCl 4, BCl 3 and the like.
- the fluorine gas used in the dry etching is not particularly limited as long as F is contained.
- a fluorine-based gas CHF 3, CF 4, C 2 F 6, C 4 F 8, SF 6 , and the like.
- the fluorine-based gas not containing C has a relatively low etching rate of the glass material with respect to the light-transmitting substrate 1, damage to the light-transmitting substrate 1 can be further reduced.
- the semiconductor device manufacturing method of the present invention uses the phase shift mask 200 manufactured using the phase shift mask 200 or the mask blank 100 to expose and transfer a pattern onto a resist film on a semiconductor substrate. It is characterized by.
- the phase shift mask 200 is set on a mask stage of an exposure apparatus that uses an ArF excimer laser as an exposure light source, and a resist on a semiconductor substrate is obtained. Even when the phase shift pattern 2a is transferred by exposure to the film, the pattern can be transferred to the resist film on the semiconductor substrate with sufficient accuracy to satisfy the design specifications. For example, a fine pattern such as a contact hole can be easily transferred to a resist film on a semiconductor substrate by NTD. For this reason, when the circuit pattern is formed by dry etching the lower layer film using this resist film pattern as a mask, a highly accurate circuit pattern free from wiring short-circuiting or disconnection due to insufficient accuracy can be formed.
- phase shift film having a two-layer structure including a low transmission layer made of a silicon nitride-based material and a high transmission layer made of a silicon oxide-based material, which are sequentially arranged from the light-transmitting substrate side.
- the optimum thickness of each highly permeable layer was determined.
- the target phase difference was set to a range of 177 ⁇ 0.5 degrees.
- the target transmittance was set to 22 ⁇ 2%, 30 ⁇ 2%, and 36 ⁇ 2%, respectively.
- the refractive index n of the low transmission layer is 2.58, the extinction coefficient k is 0.36, the refractive index n of the high transmission layer is 1.59, and the extinction coefficient k is 0.00. Performed under conditions. The simulation was performed under the condition that ArF exposure light is perpendicularly incident on the phase shift film.
- the transmittance in the actual simulation was 21.8% and the phase difference was 177.0 degrees.
- the thickness of the low transmission layer determined by simulation was 58.5 nm, and the thickness of the high transmission layer was 11.0 nm.
- the transmittance in the actual simulation was 29.1% and the phase difference was 177.1 degrees.
- the thickness of the low transmission layer obtained by simulation was 52.0 nm, and the thickness of the high transmission layer was 25.5 nm.
- the transmittance in the actual simulation was 36.0% and the phase difference was 176.9 degrees.
- the thickness of the low transmission layer obtained by simulation was 38.0 nm, and the thickness of the high transmission layer was 61.0 nm.
- Example 1 describes a case where the phase shift film 2 has a structure including two sets of laminated structures composed of a low transmission layer 21 and a high transmission layer 22 and the target transmittance is 22 ⁇ 2%.
- a translucent substrate 1 made of synthetic quartz glass having a main surface dimension of about 152 mm ⁇ about 152 mm and a thickness of about 6.25 mm was prepared.
- the translucent substrate 1 had an end face and a main surface polished to a predetermined surface roughness, and then subjected to a predetermined cleaning process and a drying process.
- the translucent substrate 1 is installed in a single wafer RF sputtering apparatus, and a mixed gas (flow rate ratio Kr) of krypton (Kr), helium (He) and nitrogen (N 2 ) using a silicon (Si) target.
- a mixed gas flow rate ratio Kr
- Kr krypton
- He helium
- N 2 nitrogen
- Si silicon
- pressure 0.09 Pa
- the power of the RF power source is 2.8 kW
- the reactive sputtering (RF sputtering) is performed on the light-transmitting substrate 1.
- the low transmission layer 21 is formed under the same conditions on the main surface of another translucent substrate, and the optical characteristics of the low transmission layer 21 are measured using a spectroscopic ellipsometer (M-2000D manufactured by JA Woollam). When the characteristics were measured, the refractive index n at a wavelength of 193 nm was 2.58, and the extinction coefficient k was 0.36.
- the thickness of the low-transmitting layer 21 after film formation can be confirmed by, for example, a measuring device using an X-ray reflectivity method (XRR) (for example, GXR-300 manufactured by Rigaku Corporation). Other film thicknesses can be confirmed in the same manner.
- XRR X-ray reflectivity method
- the conditions used in forming the low-permeability layer 21, in advance at the single-wafer RF sputtering apparatus used, N 2 of Kr gas, a mixed gas of He gas and N 2 gas in the sputtering gas The relationship between the gas flow rate and the film formation rate is verified, and film formation conditions such as a flow rate ratio capable of stably forming a film in the poison mode (reaction mode) region are selected.
- the composition of the low transmission layer 21 is a result obtained by measurement by X-ray photoelectron spectroscopy (XPS). The same applies to other films.
- Ar argon
- the power of the RF power source is 1.5 kW
- the highly transmissive layer 22 is formed under the same conditions on the main surface of another translucent substrate, and the optical property of the highly transmissive layer 22 is measured using a spectroscopic ellipsometer (M-2000D manufactured by JA Woollam). When the characteristics were measured, the refractive index n at a wavelength of 193 nm was 1.59, and the extinction coefficient k was 0.00.
- the translucent substrate 1 in which the low transmission layer 21 and the high transmission layer 22 are laminated in this order is installed in a single wafer RF sputtering apparatus, and under the same conditions as the film formation of the low transmission layer 21, On the high transmission layer 22, the low transmission layer 21 was formed with a thickness of 29.3 nm.
- the composition and optical characteristics of the formed low transmission layer 21 are the same as those of the low transmission layer 21 described above.
- the translucent substrate 1 in which the low transmission layer 21, the high transmission layer 22, and the low transmission layer 21 are laminated in this order is installed in a single wafer RF sputtering apparatus, and the high transmission layer 22 is formed.
- the high transmission layer 22 was formed with a thickness of 9.5 nm on the low transmission layer 21 under the same conditions as above.
- the composition and optical characteristics of the formed high transmission layer 22 are the same as those of the high transmission layer 22 described above.
- the translucent substrate 1 two sets of a laminated structure in which the low transmissive layer 21 and the high transmissive layer 22 are laminated in this order are provided, and the thickness of the high transmissive layer 22 provided at the top is provided.
- the phase shift film 2 is thicker than the thickness of the high transmission layer 22 provided on the area other than the uppermost layer, and the thickness of the low transmission layer 21 is greater than the thickness of the high transmission layer 22 provided on the other area. And a total film thickness of 69.6 nm.
- the translucent substrate 1 on which the phase shift film 2 was formed was subjected to a heat treatment in the atmosphere under the conditions of a heating temperature of 500 ° C. and a treatment time of 1 hour.
- the transmittance and phase difference of the ArF excimer laser at the wavelength of light (about 193 nm) were measured on the phase shift film 2 after the heat treatment using a phase shift amount measuring device (MPM-193, manufactured by Lasertec Corporation).
- the phase difference was 26.8% and the phase difference was 176.8 degrees.
- the translucent substrate 1 on which the phase shift film 2 after the heat treatment is formed is installed in a single-wafer DC sputtering apparatus, and using a chromium (Cr) target, argon (Ar), carbon dioxide (CO 2 ). ) And helium (He) mixed gas as sputtering gas, DC power is 1.8 kW, and reactive sputtering (DC sputtering) is in contact with the surface of the phase shift film 2 to form a light shielding film 3 made of CrOC. (Cr: 71 atomic%, O: 15 atomic%, C: 14 atomic%) was formed with a thickness of 56 nm.
- a spectrophotometer (Cary 4000 manufactured by Agilent Technologies) is used for the translucent substrate 1 on which the phase shift film 2 and the light shielding film 3 are laminated, and an ArF excimer laser having a laminated structure of the phase shift film 2 and the light shielding film 3 is used.
- an ArF excimer laser having a laminated structure of the phase shift film 2 and the light shielding film 3 is used.
- the mask blank 100 of Example 1 having a structure in which the phase shift film 2, the light shielding film 3, and the hard mask film 4 having a four-layer structure were laminated on the light transmitting substrate 1 was manufactured.
- phase shift mask 200 of Example 1 was produced according to the following procedure.
- the surface of the hard mask film 4 was subjected to HMDS treatment. Subsequently, a resist film made of a chemically amplified resist for electron beam drawing with a film thickness of 80 nm was formed in contact with the surface of the hard mask film 4 by spin coating. Next, a first pattern which is a phase shift pattern to be formed on the phase shift film 2 is drawn on the resist film by electron beam, a predetermined development process and a cleaning process are performed, and a first pattern having the first pattern is formed. 1 resist pattern 5a was formed (see FIG. 2A).
- a resist film made of a chemically amplified resist for electron beam lithography was formed on the light-shielding pattern 3a with a film thickness of 150 nm by spin coating.
- a second pattern which is a pattern including a light shielding band to be formed on the light shielding film 3 (light shielding pattern)
- a predetermined process such as a development process is further performed to form a light shielding pattern.
- a second resist pattern 6b was formed.
- phase shift mask 200 (Light shielding pattern 3b) was formed (see FIG. 2E). Further, the second resist pattern 6b was removed, and a predetermined process such as cleaning was performed to obtain a phase shift mask 200 (see FIG. 2F). The obtained phase shift mask 200 was good with few steps on the pattern side wall of the phase shift pattern 2a.
- phase shift mask 200 of Example 1 a transfer image was simulated when AIMS 193 (manufactured by Carl Zeiss) was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Comparative Example 1 Comparative Example 1 will be described in which the phase shift film has a structure including two sets of laminated structures composed of a low transmission layer and a high transmission layer, and the target transmittance is 22 ⁇ 2%.
- the mask blank of Comparative Example 1 was manufactured in the same procedure as the mask blank 100 of Example 1 except that the phase shift film was changed. Specifically, in the phase shift film of Comparative Example 1, the thickness of the low transmission layer is 29.3 nm, the thickness of the high transmission layer provided at the top and the thickness of the high transmission layer provided other than the top. Both thicknesses were set to 5.5 nm.
- a phase shift film having the same thickness in each group was formed with a total film thickness of 69.6 nm.
- the light-transmitting substrate on which the phase shift film was formed was subjected to heat treatment.
- the transmittance and phase difference of the ArF excimer laser at the wavelength of light were measured on the phase shift film after the heat treatment in the same manner as in Example 1, the transmittance was 19.0%.
- the phase difference was 176.5 degrees.
- the transmittance of the phase shift film of Comparative Example 1 was greatly reduced from the target transmittance range.
- phase shift mask of Comparative Example 1 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- the transmittance of the phase shift film of Comparative Example 1 was greatly reduced from the range of the target transmittance. There was a case where was insufficient. From this result, when the phase shift mask of Comparative Example 1 is set on the mask stage of the exposure apparatus and exposed and transferred to the resist film on the semiconductor substrate, the circuit pattern finally formed on the semiconductor device is a circuit pattern. It is expected that disconnection or short circuit may occur.
- Example 2 describes a case where the phase shift film 2 has a structure having two sets of laminated structures including a low transmission layer 21 and a high transmission layer 22, and the target transmittance is 30 ⁇ 2%.
- the mask blank 100 of Example 2 was manufactured in the same procedure as the mask blank 100 of Example 1 except that the phase shift film 2 and the light shielding film 3 were changed. Specifically, in the phase shift film 2 of Example 2, the thickness of the low transmission layer 21 is set to 26.0 nm, the thickness of the high transmission layer 22 provided at the top is set to 24.0 nm, and other than the top. The thickness of the high transmission layer 22 provided was 1.5 nm.
- the thickness of the high transmission layer 22 provided at the top is The total thickness of the phase shift film 2 is greater than the thickness of the high transmission layer 22 provided except for the uppermost layer, and the thickness of the low transmission layer 21 is greater than the thickness of the high transmission layer 22 provided other than the uppermost layer.
- the film was formed with a thickness of 77.5 nm.
- Example 2 As in Example 1, the light-transmitting substrate 1 on which the phase shift film 2 was formed was subjected to heat treatment. As in Example 1, the transmittance and phase difference of the ArF excimer laser light at the wavelength (about 193 nm) were measured on the phase shift film 2 after the heat treatment. The transmittance was 28.1%. The phase difference was 176.5 degrees.
- Example 2 the thickness of the light shielding film 3 was changed to 58 nm.
- a spectrophotometer (Cary 4000 manufactured by Agilent Technologies) is used for the translucent substrate 1 on which the phase shift film 2 and the light shielding film 3 of Example 2 are laminated, and the laminated structure of the phase shift film 2 and the light shielding film 3 is used.
- the optical density at the wavelength of light (about 193 nm) of the ArF excimer laser was measured, it was confirmed that it was 3.0 or more.
- the mask blank 100 of Example 2 having a structure in which the phase shift film 2, the light shielding film 3, and the hard mask film 4 having a four-layer structure were laminated on the light transmitting substrate 1 was manufactured.
- phase shift mask 200 of Example 2 was manufactured in the same procedure as in Example 1.
- phase shift mask 200 of Example 2 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Comparative Example 2 is a case where the phase shift film is a structure having two sets of laminated structures composed of a low transmission layer and a high transmission layer, and the target transmittance is 30 ⁇ 2%.
- the mask blank of Comparative Example 2 was manufactured in the same procedure as the mask blank 100 of Example 2 except that the phase shift film was changed. Specifically, in the phase shift film of Comparative Example 2, the thickness of the low transmission layer is set to 26.0 nm, the thickness of the high transmission layer provided on the top and the thickness of the high transmission layer provided on the top other than the top. Both thicknesses were 12.8 nm.
- a phase shift film having the same thickness in each group was formed with a total film thickness of 77.6 nm.
- phase shift mask of Comparative Example 2 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Example 3 describes a case where the phase shift film 2 has a structure including four sets of laminated structures composed of the low transmission layer 21 and the high transmission layer 22 and the target transmittance is 30 ⁇ 2%.
- the mask blank 100 of Example 3 was manufactured in the same procedure as the mask blank 100 of Example 2, except that the phase shift film 2 was changed. Specifically, in the phase shift film 2 of Example 3, the laminated structure composed of the low transmission layer 21 and the high transmission layer 22 is made into four sets, and the thickness of the low transmission layer 21 is set to 13.0 nm at the top. The thickness of the high transmissive layer 22 is 22.5 nm, and the thickness of the high transmissive layer 22 other than the uppermost layer is 1.0 nm.
- the total thickness of the phase shift film 2 is greater than the thickness of the high transmission layer 22 provided except for the uppermost layer, and the thickness of the low transmission layer 21 is greater than the thickness of the high transmission layer 22 provided other than the uppermost layer.
- the film was formed with a thickness of 77.5 nm.
- Example 3 the light-transmitting substrate 1 on which the phase shift film 2 was formed was subjected to heat treatment.
- the transmittance and phase difference at the wavelength of light (about 193 nm) of the ArF excimer laser were measured in the same manner as in Example 1.
- the transmittance was 28.0%, The phase difference was 177.0 degrees.
- the mask blank 100 of Example 3 having a structure in which the phase shift film 2, the light shielding film 3, and the hard mask film 4 having an eight-layer structure were laminated on the light transmitting substrate 1 was manufactured.
- phase shift mask 200 of Example 3 was manufactured in the same procedure as in Example 1.
- phase shift mask 200 of Example 3 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Comparative Example 3 describes a case where the phase shift film has a structure including four sets of laminated structures including a low transmission layer and a high transmission layer, and the target transmittance is 30 ⁇ 2%.
- the mask blank of Comparative Example 3 was manufactured in the same procedure as the mask blank 100 of Example 2 except that the phase shift film was changed. Specifically, in the phase shift film of Comparative Example 3, the stacked structure composed of the low transmission layer and the high transmission layer is made into four sets, and the thickness of the low transmission layer is set to 13.0 nm, and the highest thickness is provided. Both the thickness of the transmissive layer and the thickness of the highly transmissive layer other than the uppermost layer were 6.4 nm.
- a phase shift film having the same thickness in each group was formed with a total film thickness of 77.6 nm.
- the light-transmitting substrate on which the phase shift film was formed was subjected to heat treatment.
- the transmittance and phase difference of the ArF excimer laser at the wavelength of light (about 193 nm) were measured on the phase shift film after the heat treatment in the same manner as in Example 1.
- the transmittance was 22.0%.
- the phase difference was 183.6 degrees.
- the transmittance of the phase shift film of Comparative Example 3 greatly decreased from the target transmittance range, and the phase difference deviated from the target phase difference range.
- phase shift mask of Comparative Example 3 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Example 4 describes a case where the phase shift film 2 is a structure having two sets of laminated structures including a low transmission layer 21 and a high transmission layer 22 and the target transmittance is 36 ⁇ 2%.
- the mask blank 100 of Example 4 was manufactured in the same procedure as the mask blank 100 of Example 1 except that the phase shift film 2 and the light shielding film 3 were changed. Specifically, in the phase shift film 2 of Example 4, the thickness of the low transmission layer 21 is 19.0 nm, the thickness of the high transmission layer 22 provided at the top is 59.0 nm, and other than the top. The thickness of the high transmission layer 22 provided was set to 1.0 nm.
- the thickness of the high transmission layer 22 provided at the top is The total thickness of the phase shift film 2 is greater than the thickness of the high transmission layer 22 provided except for the uppermost layer, and the thickness of the low transmission layer 21 is greater than the thickness of the high transmission layer 22 provided other than the uppermost layer.
- the film was formed with a thickness of 98.0 nm.
- the light-transmitting substrate 1 on which the phase shift film 2 was formed was subjected to heat treatment.
- the transmittance and the phase difference at the wavelength of the ArF excimer laser light were measured in the same manner as in Example 1.
- the transmittance was 35.0%, The phase difference was 177.4 degrees.
- Example 4 the thickness of the light shielding film 3 was changed to 60 nm.
- a spectrophotometer Cary 4000 manufactured by Agilent Technologies
- the optical density at the wavelength of light (about 193 nm) of the ArF excimer laser was measured, it was confirmed that it was 3.0 or more.
- the mask blank 100 of Example 4 having a structure in which the phase shift film 2, the light shielding film 3, and the hard mask film 4 having a four-layer structure were laminated on the light transmitting substrate 1 was manufactured.
- phase shift mask 200 of Example 4 was manufactured in the same procedure as in Example 1.
- phase shift mask 200 of Example 4 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Comparative Example 4 is a case where the phase shift film has a structure including two sets of laminated structures including a low transmission layer and a high transmission layer, and the target transmittance is 36 ⁇ 2%.
- the mask blank of Comparative Example 4 was manufactured in the same procedure as the mask blank 100 of Example 4 except that the phase shift film was changed.
- the thickness of the low transmission layer is 19.0 nm
- the thickness of the high transmission layer provided on the top is the thickness of the high transmission layer provided on the other than the top. Both thicknesses were 30.5 nm.
- a phase shift film having the same thickness in each group was formed with a total film thickness of 99.0 nm.
- the light-transmitting substrate on which the phase shift film was formed was subjected to heat treatment.
- the transmittance and the phase difference at the wavelength of the ArF excimer laser light (about 193 nm) were measured on the phase-shifted film after the heat treatment, and the transmittance was 28.9%.
- the phase difference was 170.0 degrees.
- the transmittance of the phase shift film of Comparative Example 4 greatly decreased from the target transmittance range, and the phase difference deviated significantly from the target phase difference range.
- phase shift mask a phase shift mask of Comparative Example 4 was manufactured by using the mask blank of Comparative Example 4 in the same procedure as in Example 1.
- phase shift mask of Comparative Example 4 similarly to the case of Example 1, a transfer image was simulated when exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Example 5 describes a case where the phase shift film 2 has a structure including four sets of laminated structures composed of the low transmission layer 21 and the high transmission layer 22 and the target transmittance is 36 ⁇ 2%.
- the mask blank 100 of Example 5 was manufactured in the same procedure as the mask blank 100 of Example 4 except that the phase shift film 2 was changed. Specifically, in the phase shift film 2 of Example 5, the laminated structure composed of the low transmission layer 21 and the high transmission layer 22 is made into four sets, and the thickness of the low transmission layer 21 is 9.4 nm and provided at the top. The thickness of the highly transmissive layer 22 is set to 57.0 nm, and the thickness of the highly transmissive layer 22 provided other than the uppermost layer is set to 1.0 nm.
- the thickness of the high transmission layer 22 provided at the top is The total thickness of the phase shift film 2 is greater than the thickness of the high transmission layer 22 provided except for the uppermost layer, and the thickness of the low transmission layer 21 is greater than the thickness of the high transmission layer 22 provided other than the uppermost layer.
- the film was formed with a thickness of 97.6 nm.
- Example 4 similarly to the case of Example 1, the light-transmitting substrate 1 on which the phase shift film 2 was formed was subjected to heat treatment. As in Example 1, the transmittance and phase difference of the ArF excimer laser light at the wavelength (about 193 nm) were measured on the phase shift film 2 after the heat treatment, and the transmittance was 35.2%. The phase difference was 177.3 degrees.
- the mask blank 100 of Example 5 having a structure in which the phase shift film 2, the light shielding film 3, and the hard mask film 4 having an eight-layer structure were laminated on the light transmitting substrate 1 was manufactured.
- phase shift mask 200 of Example 5 was manufactured in the same procedure as in Example 1.
- phase shift mask 200 of Example 5 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
- Comparative Example 5 describes a case where the phase shift film is a structure having four sets of laminated structures composed of a low transmission layer and a high transmission layer, and the target transmittance is 36 ⁇ 2%.
- the mask blank of Comparative Example 5 was manufactured in the same procedure as the mask blank 100 of Example 4 except that the phase shift film was changed. Specifically, in the phase shift film of Comparative Example 5, the laminated structure composed of the low transmission layer and the high transmission layer is made into four sets, and the thickness of the low transmission layer is set to 9.5 nm, and the highest thickness is provided. Both the thickness of the transmissive layer and the thickness of the highly transmissive layer other than the uppermost layer were set to 15.2 nm.
- a phase shift film having the same thickness in each group was formed with a total film thickness of 98.8 nm.
- the light-transmitting substrate on which the phase shift film was formed was subjected to heat treatment.
- the transmittance and phase difference of the ArF excimer laser light at the wavelength (about 193 nm) were measured on the phase shift film after the heat treatment in the same manner as in Example 1, the transmittance was 27.1%.
- the phase difference was 188.2 degrees.
- the transmittance of the phase shift film of Comparative Example 5 greatly decreased from the target transmittance range, and the phase difference deviated from the target phase difference range.
- phase shift mask of Comparative Example 5 similarly to the case of Example 1, a transfer image was simulated when it was exposed and transferred to a resist film on a semiconductor substrate with exposure light having a wavelength of 193 nm.
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Abstract
Description
(構成1)
透光性基板上に、位相シフト膜を備えたマスクブランクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有し、窒素の含有量が50原子%以上である材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有し、酸素の含有量が50原子%以上である材料で形成されており、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とするマスクブランク。
透光性基板上に、位相シフト膜を備えたマスクブランクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有する材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有する材料で形成されており、
前記低透過層は、前記高透過層よりも窒素の含有量が多く、
前記高透過層は、前記低透過層よりも酸素の含有量が多く、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とするマスクブランク。
前記低透過層は、ケイ素及び窒素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と窒素とからなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と酸素とからなる材料で形成されている
ことを特徴とする構成1または2に記載のマスクブランク。
前記低透過層は、ケイ素及び窒素からなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料で形成されている
ことを特徴とする構成1または2に記載のマスクブランク。
前記低透過層は、前記露光光の波長における屈折率nが2.0以上であり、かつ前記露光光の波長における消衰係数kが0.2以上であり、
前記高透過層は、前記露光光の波長における屈折率nが2.0未満であり、かつ前記露光光の波長における消衰係数kが0.1以下である
ことを特徴とする構成1から4のいずれかに記載のマスクブランク。
前記低透過層の厚さは、30nm以下であることを特徴とする構成1から5のいずれかに記載のマスクブランク。
前記位相シフト膜上に、遮光膜を備えることを特徴とする構成1から6のいずれかに記載のマスクブランク。
透光性基板上に、転写パターンを有する位相シフト膜を備えた位相シフトマスクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有し、窒素の含有量が50原子%以上である材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有し、酸素の含有量が50原子%以上である材料で形成されており、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とする位相シフトマスク。
透光性基板上に、転写パターンを有する位相シフト膜を備えた位相シフトマスクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有する材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有する材料で形成されており、
前記低透過層は、前記高透過層よりも窒素の含有量が多く、
前記高透過層は、前記低透過層よりも酸素の含有量が多く、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とする位相シフトマスク。
前記低透過層は、ケイ素及び窒素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と窒素とからなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と酸素とからなる材料で形成されている
ことを特徴とする構成8または9に記載の位相シフトマスク。
前記低透過層は、ケイ素及び窒素からなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料で形成されている
ことを特徴とする構成8または9に記載の位相シフトマスク。
前記低透過層は、前記露光光の波長における屈折率nが2.0以上であり、かつ前記露光光の波長における消衰係数kが0.2以上であり、
前記高透過層は、前記露光光の波長における屈折率nが2.0未満であり、かつ前記露光光の波長における消衰係数kが0.1以下である
ことを特徴とする構成8から11のいずれかに記載の位相シフトマスク。
前記低透過層の厚さは、30nm以下であることを特徴とする構成8から12のいずれかに記載の位相シフトマスク。
前記位相シフト膜上に、遮光帯を含むパターンを有する遮光膜を備えることを特徴とする構成8から13のいずれかに記載の位相シフトマスク。
構成7記載のマスクブランクを用いた位相シフトマスクの製造方法であって、
ドライエッチングにより前記遮光膜に転写パターンを形成する工程と、
前記転写パターンを有する遮光膜をマスクとするドライエッチングにより前記位相シフト膜に転写パターンを形成する工程と、
遮光帯を含むパターンを有するレジスト膜をマスクとするドライエッチングにより前記遮光膜に遮光帯を含むパターンを形成する工程と
を備えることを特徴とする位相シフトマスクの製造方法。
構成14記載の位相シフトマスクを用い、半導体基板上のレジスト膜に転写パターンを露光転写する工程を備えることを特徴とする半導体デバイスの製造方法。
構成15記載の位相シフトマスクの製造方法により製造された位相シフトマスクを用い、半導体基板上のレジスト膜に転写パターンを露光転写する工程を備えることを特徴とする半導体デバイスの製造方法。
本発明者らは、窒化ケイ素材料からなる単層の位相シフト膜では実現が困難な20%以上の透過率を実現するために、窒化ケイ素系材料からなる低透過層を、ArFエキシマレーザーの露光光に対して透過率の高い酸化ケイ素系材料からなる高透過層と組み合わせて位相シフト膜を構成することを試みた。
このような高透過層の厚さが各組に均等に配分されている位相シフト膜(以下、均等配分型の位相シフト膜という。)の光学特性を測定したところ、位相シフト膜の透過率が、シミュレーション時の目標透過率である30±2%の範囲から大きく低下することが判明した。また、位相シフト膜の位相差が、シミュレーション時の目標屈折率である177±0.5度の範囲外になることが判明した。
その結果、最上に設けられている高透過層の厚さが、最上以外に設けられている高透過層の厚さよりも厚く、低透過層の厚さが、最上以外に設けられている高透過層の厚さよりも厚い位相シフト膜(以下、最上層厚膜型の位相シフト膜という。)の場合、位相シフト膜の透過率を、シミュレーション時の目標透過率である30±2%の範囲とし、位相シフト膜の位相差を、シミュレーション時の目標位相差である177±0.5度の範囲とすることができることが判明した。
その結果、4層構造の位相シフト膜の場合と同様に、均等配分型の位相シフト膜の透過率が、シミュレーション時の目標透過率である30±2%の範囲から大きく低下し、均等配分型の位相シフト膜の位相差が、シミュレーション時の目標位相差である177±0.5度の範囲外になることが判明した。また、4層構造の位相シフト膜の場合と同様に、最上層厚膜型の位相シフト膜の透過率を、シミュレーション時の目標透過率である30±2%の範囲とし、最上層厚膜型の位相シフト膜の位相差をシミュレーション時の目標位相差である177±0.5度の範囲とすることができることが判明した。
その結果、いずれの目標透過率の場合でも、4層構造及び8層構造のそれぞれの場合について、均等配分型の位相シフト膜の透過率が、シミュレーション時の目標透過率の範囲から大きく低下することが判明した。また、均等配分型の位相シフト膜の位相差については、ほとんどの目標透過率の場合において、4層構造及び8層構造のそれぞれの場合について、目標位相差である177±0.5度の範囲外になることが判明した。また、最上層厚膜型の位相シフト膜の透過率を、シミュレーション時の目標透過率の範囲とし、最上層厚膜型の位相シフト膜の位相差をシミュレーション時の目標位相差である177±0.5度の範囲とすることができることが判明した。
図1は、本発明の実施形態に係るマスクブランク100の構成を示す断面図である。
低透過層21は、ArF露光光に対する耐光性が低下する要因となり得る遷移金属を含有しない。また、低透過層21は、遷移金属を除く金属元素も、ArF露光光に対する耐光性が低下する要因となり得る可能性を否定できないため、含有しないことが望ましい。
低透過層21は、ケイ素に加え、いずれの半金属元素を含有してもよい。この半金属元素の中でも、ホウ素、ゲルマニウム、アンチモン及びテルルから選ばれる1以上の元素を低透過層21に含有させる場合、スパッタリングターゲットとして用いるケイ素の導電性を高めることが期待できるため、好ましい。
高透過層22は、ArF露光光に対する透過率が低下する要因となり、かつArF露光光に対する耐光性が低下する要因となり得る遷移金属を含有しない。また、高透過層22は、遷移金属を除く金属元素も、ArF露光光に対する透過率が低下する要因となり、かつArF露光光に対する耐光性が低下する要因となり得る可能性を否定できないため、含有しないことが望ましい。
高透過層22は、酸素に加え、いずれの非金属元素を含有してもよい。ここで、非金属元素とは、狭義の非金属元素(窒素、炭素、リン、硫黄、セレン、水素)、ハロゲン(フッ素、塩素、臭素、ヨウ素等)及び貴ガスを含むものをいう。この非金属元素の中でも、炭素、フッ素及び水素から選ばれる1以上の元素を含有することが好ましい。
透光性基板1は、合成石英ガラス等の酸化ケイ素を主成分とする材料で形成されていることが一般的である。本発明の位相シフト膜2では、透光性基板側から低透過層21と高透過層22とをこの順に配置しているため、位相シフト膜2と透光性基板1との間での終点検出では、修正の進行に伴う窒素の検出強度の低下から酸素の検出強度の上昇への変化を見て判定することができる。
低透過層形成工程及び高透過層形成工程で用いられる貴ガスは、いずれの貴ガスも適用可能である。この貴ガスとして好ましいものとしては、アルゴン、クリプトン、キセノンが挙げられる。また、薄膜の応力を緩和するために、原子量の小さいヘリウム、ネオンを薄膜に積極的に取りこませることができる。
(シミュレーション)
先ず、透光性基板側から順に配置された窒化ケイ素系材料からなる低透過層と酸化ケイ素系材料からなる高透過層とからなる2層構造の位相シフト膜について、シミュレーションによって、低透過層及び高透過層のそれぞれの最適な厚さを求めた。シミュレーションにおいて、目標位相差を177±0.5度の範囲とした。また、シミュレーションにおいて、目標透過率を22±2%、30±2%、及び36±2%のそれぞれの範囲とした。また、シミュレーションは、低透過層の屈折率nが2.58、消衰係数kが0.36であり、高透過層の屈折率nが1.59、消衰係数kが0.00である条件で行った。また、シミュレーションは、ArF露光光が位相シフト膜に垂直入射する条件で行った。
目標透過率を30±2%の範囲としてシミュレーションを行ったとき、実際のシミュレーションでの透過率は29.1%であり、位相差は177.1度であった。シミュレーションで求められた低透過層の厚さは52.0nmであり、高透過層の厚さは25.5nmであった。
目標透過率を36±2%の範囲としてシミュレーションを行ったとき、実際のシミュレーションでの透過率は36.0%であり、位相差は176.9度であった。シミュレーションで求められた低透過層の厚さは38.0nmであり、高透過層の厚さは61.0nmであった。
実施例1は、位相シフト膜2が低透過層21と高透過層22とからなる積層構造を2組有する構造であり、目標透過率が22±2%である場合について説明する。
主表面の寸法が約152mm×約152mmで、厚さが約6.25mmの合成石英ガラスからなる透光性基板1を準備した。この透光性基板1は、端面及び主表面が所定の表面粗さに研磨され、その後、所定の洗浄処理及び乾燥処理を施されたものであった。
次に、この実施例1のマスクブランク100を用い、以下の手順で実施例1の位相シフトマスク200を作製した。
比較例1は、位相シフト膜が低透過層と高透過層とからなる積層構造を2組有する構造であり、目標透過率が22±2%である場合について説明する。
[マスクブランクの製造]
比較例1のマスクブランクは、位相シフト膜を変更した以外は、実施例1のマスクブランク100と同様の手順で製造された。具体的には、比較例1の位相シフト膜では、低透過層の厚さを29.3nmに、最上に設けられている高透過層の厚さと最上以外に設けられている高透過層の厚さを共に5.5nmにした。すなわち、透光性基板上に、低透過層と高透過層とがこの順に積層された1組の積層構造を2組備え、低透過層の厚さが各組で同じであり、高透過層の厚さも各組で同じである位相シフト膜を、合計膜厚69.6nmで形成した。
次に、この比較例1のマスクブランクを用い、実施例1と同様の手順で、比較例1の位相シフトマスクを製造した。
実施例2は、位相シフト膜2が低透過層21と高透過層22とからなる積層構造を2組有する構造であり、目標透過率が30±2%である場合について説明する。
実施例2のマスクブランク100は、位相シフト膜2と遮光膜3を変更した以外は、実施例1のマスクブランク100と同様の手順で製造された。具体的には、実施例2の位相シフト膜2では、低透過層21の厚さを26.0nmに、最上に設けられている高透過層22の厚さを24.0nmに、最上以外に設けられている高透過層22の厚さを1.5nmにした。すなわち、透光性基板1上に、低透過層21と高透過層22がこの順に積層された1組の積層構造を2組備え、最上に設けられている高透過層22の厚さが、最上以外に設けられている高透過層22の厚さよりも厚く、低透過層21の厚さが、最上以外に設けられている高透過層22の厚さよりも厚い位相シフト膜2を、合計膜厚77.5nmで形成した。
次に、この実施例2のマスクブランク100を用い、実施例1と同様の手順で、実施例2の位相シフトマスク200を製造した。
比較例2は、位相シフト膜が低透過層と高透過層とからなる積層構造を2組有する構造であり、目標透過率が30±2%である場合について説明する。
[マスクブランクの製造]
比較例2のマスクブランクは、位相シフト膜を変更した以外は、実施例2のマスクブランク100と同様の手順で製造された。具体的には、比較例2の位相シフト膜では、低透過層の厚さを26.0nmに、最上に設けられている高透過層の厚さと最上以外に設けられている高透過層の厚さを共に12.8nmにした。すなわち、透光性基板上に、低透過層と高透過層がこの順に積層された1組の積層構造を2組備え、低透過層の厚さが各組で同じであり、高透過層の厚さも各組で同じである位相シフト膜を、合計膜厚77.6nmで形成した。
次に、この比較例2のマスクブランクを用い、実施例1と同様の手順で、比較例2の位相シフトマスクを製造した。
実施例3は、位相シフト膜2が低透過層21と高透過層22とからなる積層構造を4組有する構造であり、目標透過率が30±2%である場合について説明する。
実施例3のマスクブランク100は、位相シフト膜2を変更した以外は、実施例2のマスクブランク100と同様の手順で製造された。具体的には、実施例3の位相シフト膜2では、低透過層21と高透過層22とからなる積層構造を4組にし、低透過層21の厚さを13.0nmに、最上に設けられている高透過層22の厚さを22.5nmに、最上以外に設けられている高透過層22の厚さを1.0nmにした。すなわち、透光性基板1上に、低透過層21と高透過層22がこの順に積層された1組の積層構造を4組備え、最上に設けられている高透過層22の厚さが、最上以外に設けられている高透過層22の厚さよりも厚く、低透過層21の厚さが、最上以外に設けられている高透過層22の厚さよりも厚い位相シフト膜2を、合計膜厚77.5nmで形成した。
次に、この実施例3のマスクブランク100を用い、実施例1と同様の手順で、実施例3の位相シフトマスク200を製造した。
比較例3は、位相シフト膜が低透過層と高透過層とからなる積層構造を4組有する構造であり、目標透過率が30±2%である場合について説明する。
[マスクブランクの製造]
比較例3のマスクブランクは、位相シフト膜を変更した以外は、実施例2のマスクブランク100と同様の手順で製造された。具体的には、比較例3の位相シフト膜では、低透過層と高透過層とからなる積層構造を4組にし、低透過層の厚さを13.0nmに、最上に設けられている高透過層の厚さと最上以外に設けられている高透過層の厚さを共に6.4nmにした。すなわち、透光性基板上に、低透過層と高透過層がこの順に積層された1組の積層構造を4組備え、低透過層の厚さが各組で同じであり、高透過層の厚さも各組で同じである位相シフト膜を、合計膜厚77.6nmで形成した。
次に、この比較例3のマスクブランクを用い、実施例1と同様の手順で、比較例3の位相シフトマスクを製造した。
実施例4は、位相シフト膜2が低透過層21と高透過層22とからなる積層構造を2組有する構造であり、目標透過率が36±2%である場合について説明する。
実施例4のマスクブランク100は、位相シフト膜2と遮光膜3を変更した以外は、実施例1のマスクブランク100と同様の手順で製造された。具体的には、実施例4の位相シフト膜2では、低透過層21の厚さを19.0nmに、最上に設けられている高透過層22の厚さを59.0nmに、最上以外に設けられている高透過層22の厚さを1.0nmにした。すなわち、透光性基板1上に、低透過層21と高透過層22がこの順に積層された1組の積層構造を2組備え、最上に設けられている高透過層22の厚さが、最上以外に設けられている高透過層22の厚さよりも厚く、低透過層21の厚さが、最上以外に設けられている高透過層22の厚さよりも厚い位相シフト膜2を、合計膜厚98.0nmで形成した。
次に、この実施例4のマスクブランク100を用い、実施例1と同様の手順で、実施例4の位相シフトマスク200を製造した。
比較例4は、位相シフト膜が低透過層と高透過層とからなる積層構造を2組有する構造であり、目標透過率が36±2%である場合について説明する。
[マスクブランクの製造]
比較例4のマスクブランクは、位相シフト膜を変更した以外は、実施例4のマスクブランク100と同様の手順で製造された。具体的には、比較例4の位相シフト膜では、低透過層の厚さを19.0nmに、最上に設けられている高透過層の厚さと最上以外に設けられている高透過層の厚さを共に30.5nmにした。すなわち、透光性基板上に、低透過層と高透過層がこの順に積層された1組の積層構造を2組備え、低透過層の厚さが各組で同じであり、高透過層の厚さも各組で同じである位相シフト膜を、合計膜厚99.0nmで形成した。
次に、この比較例4のマスクブランクを用い、実施例1と同様の手順で、比較例4の位相シフトマスクを製造した。
実施例5は、位相シフト膜2が低透過層21と高透過層22とからなる積層構造を4組有する構造であり、目標透過率が36±2%である場合について説明する。
実施例5のマスクブランク100は、位相シフト膜2を変更した以外は、実施例4のマスクブランク100と同様の手順で製造された。具体的には、実施例5の位相シフト膜2では、低透過層21と高透過層22とからなる積層構造を4組にし、低透過層21の厚さを9.4nmに、最上に設けられている高透過層22の厚さを57.0nmに、最上以外に設けられている高透過層22の厚さを1.0nmにした。すなわち、透光性基板1上に、低透過層21と高透過層22がこの順に積層された1組の積層構造を2組備え、最上に設けられている高透過層22の厚さが、最上以外に設けられている高透過層22の厚さよりも厚く、低透過層21の厚さが、最上以外に設けられている高透過層22の厚さよりも厚い位相シフト膜2を、合計膜厚97.6nmで形成した。
次に、この実施例5のマスクブランク100を用い、実施例1と同様の手順で、実施例5の位相シフトマスク200を製造した。
比較例5は、位相シフト膜が低透過層と高透過層とからなる積層構造を4組有する構造であり、目標透過率が36±2%である場合について説明する。
[マスクブランクの製造]
比較例5のマスクブランクは、位相シフト膜を変更した以外は、実施例4のマスクブランク100と同様の手順で製造された。具体的には、比較例5の位相シフト膜では、低透過層と高透過層とからなる積層構造を4組にし、低透過層の厚さを9.5nmに、最上に設けられている高透過層の厚さと最上以外に設けられている高透過層の厚さを共に15.2nmにした。すなわち、透光性基板上に、低透過層と高透過層がこの順に積層された1組の積層構造を4組備え、低透過層の厚さが各組で同じであり、高透過層の厚さも各組で同じである位相シフト膜を、合計膜厚98.8nmで形成した。
次に、この比較例5のマスクブランクを用い、実施例1と同様の手順で、比較例5の位相シフトマスクを製造した。
2 位相シフト膜
2a 位相シフトパターン
21 低透過層
22 高透過層
3 遮光膜
3a,3b 遮光パターン
4 ハードマスク膜
4a ハードマスクパターン
5a 第1のレジストパターン
6b 第2のレジストパターン
100 マスクブランク
200 位相シフトマスク
Claims (17)
- 透光性基板上に、位相シフト膜を備えたマスクブランクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有し、窒素の含有量が50原子%以上である材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有し、酸素の含有量が50原子%以上である材料で形成されており、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とするマスクブランク。 - 透光性基板上に、位相シフト膜を備えたマスクブランクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有する材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有する材料で形成されており、
前記低透過層は、前記高透過層よりも窒素の含有量が多く、
前記高透過層は、前記低透過層よりも酸素の含有量が多く、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とするマスクブランク。 - 前記低透過層は、ケイ素及び窒素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と窒素とからなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と酸素とからなる材料で形成されている
ことを特徴とする請求項1または2に記載のマスクブランク。 - 前記低透過層は、ケイ素及び窒素からなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料で形成されている
ことを特徴とする請求項1または2に記載のマスクブランク。 - 前記低透過層は、前記露光光の波長における屈折率nが2.0以上であり、かつ前記露光光の波長における消衰係数kが0.2以上であり、
前記高透過層は、前記露光光の波長における屈折率nが2.0未満であり、かつ前記露光光の波長における消衰係数kが0.1以下である
ことを特徴とする請求項1から4のいずれかに記載のマスクブランク。 - 前記低透過層の厚さは、30nm以下であることを特徴とする請求項1から5のいずれかに記載のマスクブランク。
- 前記位相シフト膜上に、遮光膜を備えることを特徴とする請求項1から6のいずれかに記載のマスクブランク。
- 透光性基板上に、転写パターンを有する位相シフト膜を備えた位相シフトマスクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有し、窒素の含有量が50原子%以上である材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有し、酸素の含有量が50原子%以上である材料で形成されており、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とする位相シフトマスク。 - 透光性基板上に、転写パターンを有する位相シフト膜を備えた位相シフトマスクであって、
前記位相シフト膜は、ArFエキシマレーザーの露光光を20%以上の透過率で透過させる機能を有し、
前記位相シフト膜は、前記透光性基板側から順に配置された低透過層と高透過層とからなる1組の積層構造を2組以上有する構造を含み、
前記低透過層は、ケイ素及び窒素を含有する材料で形成されており、
前記高透過層は、ケイ素及び酸素を含有する材料で形成されており、
前記低透過層は、前記高透過層よりも窒素の含有量が多く、
前記高透過層は、前記低透過層よりも酸素の含有量が多く、
最上に設けられている前記高透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚く、
前記低透過層の厚さは、最上以外に設けられている前記高透過層の厚さよりも厚い
ことを特徴とする位相シフトマスク。 - 前記低透過層は、ケイ素及び窒素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と窒素とからなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料、または半金属元素及び非金属元素から選ばれる1以上の元素とケイ素と酸素とからなる材料で形成されている
ことを特徴とする請求項8または9に記載の位相シフトマスク。 - 前記低透過層は、ケイ素及び窒素からなる材料で形成されており、
前記高透過層は、ケイ素及び酸素からなる材料で形成されている
ことを特徴とする請求項8または9に記載の位相シフトマスク。 - 前記低透過層は、前記露光光の波長における屈折率nが2.0以上であり、かつ前記露光光の波長における消衰係数kが0.2以上であり、
前記高透過層は、前記露光光の波長における屈折率nが2.0未満であり、かつ前記露光光の波長における消衰係数kが0.1以下である
ことを特徴とする請求項8から11のいずれかに記載の位相シフトマスク。 - 前記低透過層の厚さは、30nm以下であることを特徴とする請求項8から12のいずれかに記載の位相シフトマスク。
- 前記位相シフト膜上に、遮光帯を含むパターンを有する遮光膜を備えることを特徴とする請求項8から13のいずれかに記載の位相シフトマスク。
- 請求項7記載のマスクブランクを用いた位相シフトマスクの製造方法であって、
ドライエッチングにより前記遮光膜に転写パターンを形成する工程と、
前記転写パターンを有する遮光膜をマスクとするドライエッチングにより前記位相シフト膜に転写パターンを形成する工程と、
遮光帯を含むパターンを有するレジスト膜をマスクとするドライエッチングにより前記遮光膜に遮光帯を含むパターンを形成する工程と
を備えることを特徴とする位相シフトマスクの製造方法。 - 請求項14記載の位相シフトマスクを用い、半導体基板上のレジスト膜に転写パターンを露光転写する工程を備えることを特徴とする半導体デバイスの製造方法。
- 請求項15記載の位相シフトマスクの製造方法により製造された位相シフトマスクを用い、半導体基板上のレジスト膜に転写パターンを露光転写する工程を備えることを特徴とする半導体デバイスの製造方法。
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