JP6323652B2 - 発熱体、振動デバイス、電子機器及び移動体 - Google Patents

発熱体、振動デバイス、電子機器及び移動体 Download PDF

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Publication number
JP6323652B2
JP6323652B2 JP2013265873A JP2013265873A JP6323652B2 JP 6323652 B2 JP6323652 B2 JP 6323652B2 JP 2013265873 A JP2013265873 A JP 2013265873A JP 2013265873 A JP2013265873 A JP 2013265873A JP 6323652 B2 JP6323652 B2 JP 6323652B2
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JP
Japan
Prior art keywords
electrode
pad
heating element
plan
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013265873A
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English (en)
Japanese (ja)
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JP2015122219A5 (enExample
JP2015122219A (ja
Inventor
謙司 林
謙司 林
晃弘 福澤
晃弘 福澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2013265873A priority Critical patent/JP6323652B2/ja
Priority to US14/571,338 priority patent/US10084429B2/en
Priority to CN201410791057.8A priority patent/CN104734659B/zh
Priority to TW103144619A priority patent/TWI660470B/zh
Publication of JP2015122219A publication Critical patent/JP2015122219A/ja
Publication of JP2015122219A5 publication Critical patent/JP2015122219A5/ja
Application granted granted Critical
Publication of JP6323652B2 publication Critical patent/JP6323652B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/08—Holders with means for regulating temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2013265873A 2013-12-24 2013-12-24 発熱体、振動デバイス、電子機器及び移動体 Active JP6323652B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013265873A JP6323652B2 (ja) 2013-12-24 2013-12-24 発熱体、振動デバイス、電子機器及び移動体
US14/571,338 US10084429B2 (en) 2013-12-24 2014-12-16 Heating body, resonation device, electronic apparatus, and moving object
CN201410791057.8A CN104734659B (zh) 2013-12-24 2014-12-18 发热体、振动器件、电子设备以及移动体
TW103144619A TWI660470B (zh) 2013-12-24 2014-12-19 發熱體、振動裝置、電子機器及移動體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013265873A JP6323652B2 (ja) 2013-12-24 2013-12-24 発熱体、振動デバイス、電子機器及び移動体

Publications (3)

Publication Number Publication Date
JP2015122219A JP2015122219A (ja) 2015-07-02
JP2015122219A5 JP2015122219A5 (enExample) 2017-02-09
JP6323652B2 true JP6323652B2 (ja) 2018-05-16

Family

ID=53401231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013265873A Active JP6323652B2 (ja) 2013-12-24 2013-12-24 発熱体、振動デバイス、電子機器及び移動体

Country Status (4)

Country Link
US (1) US10084429B2 (enExample)
JP (1) JP6323652B2 (enExample)
CN (1) CN104734659B (enExample)
TW (1) TWI660470B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105024667A (zh) * 2015-07-27 2015-11-04 广东大普通信技术有限公司 一种直接加热式恒温晶体振荡器
CN108141178A (zh) 2015-10-20 2018-06-08 株式会社村田制作所 压电振子、压电振子的温度控制方法以及压电振荡器
JP6665487B2 (ja) * 2015-11-02 2020-03-13 セイコーエプソン株式会社 集積回路装置、電子デバイス、電子機器、および基地局
CN108807513B (zh) * 2017-07-04 2019-08-20 苏州能讯高能半导体有限公司 半导体器件及其制造方法
DE102018105220A1 (de) * 2018-03-07 2019-09-12 Hauni Maschinenbau Gmbh Verfahren zur Fertigung eines elektrisch betreibbaren Heizkörpers für einen Inhalator
JP7694069B2 (ja) 2021-03-11 2025-06-18 セイコーエプソン株式会社 集積回路装置及び発振器
KR20230018953A (ko) * 2021-07-30 2023-02-07 엘지디스플레이 주식회사 진동 장치와 이를 포함하는 장치
CN114204907B (zh) * 2021-12-31 2025-06-27 广东大普通信技术股份有限公司 一种ocxo

Family Cites Families (19)

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JPH09196682A (ja) * 1996-01-19 1997-07-31 Matsushita Electric Ind Co Ltd 角速度センサと加速度センサ
JPH1141032A (ja) 1997-07-23 1999-02-12 Chuniti Denki Kogyo Kk 水晶発振子の温度制御装置
JP3248882B2 (ja) 1998-12-28 2002-01-21 東洋通信機株式会社 高安定圧電発振器の構造
JP3793555B2 (ja) 1999-05-31 2006-07-05 京セラ株式会社 円盤状ヒータ
JP2002016065A (ja) 2000-06-29 2002-01-18 Toshiba Corp 半導体装置
JP4483138B2 (ja) 2001-02-09 2010-06-16 エプソントヨコム株式会社 高安定圧電発振器の構造
GB0315526D0 (en) * 2003-07-03 2003-08-06 Qinetiq Ltd Thermal detector
JP2005310494A (ja) 2004-04-20 2005-11-04 Harison Toshiba Lighting Corp ヒータ、加熱装置、画像形成装置
JP4354347B2 (ja) 2004-06-29 2009-10-28 日本電波工業株式会社 水晶発振器
JP4804813B2 (ja) 2005-06-24 2011-11-02 日本電波工業株式会社 圧電発振器
JP2007242445A (ja) * 2006-03-09 2007-09-20 Alps Electric Co Ltd マイクロヒータ及びそれを用いたフローセンサ
TW200744314A (en) 2006-05-18 2007-12-01 Taitien Electronics Co Ltd Oscillator device capable of keeping constant temperature
JP4641294B2 (ja) 2006-08-29 2011-03-02 日本電波工業株式会社 恒温槽型水晶発振器
US20090051447A1 (en) * 2007-08-24 2009-02-26 Mccracken Jeffrey A Ovenized oscillator
JP5194726B2 (ja) 2007-11-12 2013-05-08 パナソニック株式会社 面状発熱体
ATE534191T1 (de) * 2009-03-09 2011-12-15 Micro Crystal Ag Oszillatorvorrichtung, die einen wärmegesteuerten piezoeletrischen quarz umfasst
WO2010150787A1 (ja) * 2009-06-25 2010-12-29 パナソニック電工株式会社 赤外線式ガス検知器および赤外線式ガス計測装置
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Also Published As

Publication number Publication date
TWI660470B (zh) 2019-05-21
TW201535634A (zh) 2015-09-16
CN104734659B (zh) 2019-04-26
JP2015122219A (ja) 2015-07-02
US10084429B2 (en) 2018-09-25
CN104734659A (zh) 2015-06-24
US20150180443A1 (en) 2015-06-25

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