JP6312379B2 - リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、プログラム、物品の製造方法 - Google Patents

リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、プログラム、物品の製造方法 Download PDF

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Publication number
JP6312379B2
JP6312379B2 JP2013150054A JP2013150054A JP6312379B2 JP 6312379 B2 JP6312379 B2 JP 6312379B2 JP 2013150054 A JP2013150054 A JP 2013150054A JP 2013150054 A JP2013150054 A JP 2013150054A JP 6312379 B2 JP6312379 B2 JP 6312379B2
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Japan
Prior art keywords
substrate
processing
processing unit
information
pattern formation
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JP2013150054A
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English (en)
Japanese (ja)
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JP2015023146A5 (enExample
JP2015023146A (ja
Inventor
慎一郎 古賀
慎一郎 古賀
伸 高倉
伸 高倉
亮彦 川村
亮彦 川村
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013150054A priority Critical patent/JP6312379B2/ja
Priority to KR1020140087391A priority patent/KR101758429B1/ko
Priority to US14/334,794 priority patent/US9423700B2/en
Publication of JP2015023146A publication Critical patent/JP2015023146A/ja
Priority to US15/221,985 priority patent/US9880475B2/en
Publication of JP2015023146A5 publication Critical patent/JP2015023146A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706831—Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2013150054A 2013-07-19 2013-07-19 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、プログラム、物品の製造方法 Active JP6312379B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013150054A JP6312379B2 (ja) 2013-07-19 2013-07-19 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、プログラム、物品の製造方法
KR1020140087391A KR101758429B1 (ko) 2013-07-19 2014-07-11 리소그래피 장치, 리소그래피 방법, 리소그래피 시스템, 저장 매체 및 물품 제조 방법
US14/334,794 US9423700B2 (en) 2013-07-19 2014-07-18 Lithography apparatus, lithography method, lithography system, storage medium, and article manufacturing method
US15/221,985 US9880475B2 (en) 2013-07-19 2016-07-28 Lithography apparatus, lithography method, lithography system, storage medium, and article manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013150054A JP6312379B2 (ja) 2013-07-19 2013-07-19 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、プログラム、物品の製造方法

Publications (3)

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JP2015023146A JP2015023146A (ja) 2015-02-02
JP2015023146A5 JP2015023146A5 (enExample) 2016-09-08
JP6312379B2 true JP6312379B2 (ja) 2018-04-18

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US (2) US9423700B2 (enExample)
JP (1) JP6312379B2 (enExample)
KR (1) KR101758429B1 (enExample)

Families Citing this family (14)

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JP6297001B2 (ja) * 2014-03-19 2018-03-20 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、プログラム、および物品の製造方法
JP6324246B2 (ja) * 2014-07-11 2018-05-16 キヤノン株式会社 リソグラフィ装置、および物品製造方法
JP6399839B2 (ja) * 2014-07-15 2018-10-03 キヤノン株式会社 インプリント装置、および物品の製造方法
US9927725B2 (en) 2015-02-16 2018-03-27 Canon Kabushiki Kaisha Lithography apparatus, lithography method, program, lithography system, and article manufacturing method
JP6198805B2 (ja) * 2015-02-16 2017-09-20 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、プログラム、リソグラフィシステムおよび物品製造方法
JP6438332B2 (ja) * 2015-03-18 2018-12-12 キヤノン株式会社 インプリントシステム、および物品の製造方法
JP2016207755A (ja) * 2015-04-17 2016-12-08 株式会社ニコン 露光システム及び交換方法
TW201643561A (zh) * 2015-04-17 2016-12-16 尼康股份有限公司 曝光系統
JP6562707B2 (ja) * 2015-05-13 2019-08-21 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
JP6320457B2 (ja) * 2016-05-31 2018-05-09 キヤノン株式会社 基板処理装置、基板処理方法、プログラム、及び物品製造方法
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template
JP6860365B2 (ja) * 2017-01-31 2021-04-14 キヤノン株式会社 基板処理装置、基板処理システム、基板処理方法、物品製造方法、およびプログラム
JP6853704B2 (ja) * 2017-03-22 2021-03-31 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
JP7112220B2 (ja) * 2017-05-12 2022-08-03 キヤノン株式会社 方法、装置、システム、および物品の製造方法

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Also Published As

Publication number Publication date
KR20150010601A (ko) 2015-01-28
US20150022793A1 (en) 2015-01-22
US20160334714A1 (en) 2016-11-17
JP2015023146A (ja) 2015-02-02
KR101758429B1 (ko) 2017-07-14
US9423700B2 (en) 2016-08-23
US9880475B2 (en) 2018-01-30

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