JP6301600B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6301600B2
JP6301600B2 JP2013145786A JP2013145786A JP6301600B2 JP 6301600 B2 JP6301600 B2 JP 6301600B2 JP 2013145786 A JP2013145786 A JP 2013145786A JP 2013145786 A JP2013145786 A JP 2013145786A JP 6301600 B2 JP6301600 B2 JP 6301600B2
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Japan
Prior art keywords
oxide semiconductor
layer
semiconductor layer
film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2013145786A
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English (en)
Japanese (ja)
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JP2014033194A (ja
JP2014033194A5 (enExample
Inventor
山崎　舜平
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013145786A priority Critical patent/JP6301600B2/ja
Publication of JP2014033194A publication Critical patent/JP2014033194A/ja
Publication of JP2014033194A5 publication Critical patent/JP2014033194A5/ja
Application granted granted Critical
Publication of JP6301600B2 publication Critical patent/JP6301600B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013145786A 2012-07-13 2013-07-11 半導体装置 Expired - Fee Related JP6301600B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013145786A JP6301600B2 (ja) 2012-07-13 2013-07-11 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012157653 2012-07-13
JP2012157653 2012-07-13
JP2013145786A JP6301600B2 (ja) 2012-07-13 2013-07-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2014033194A JP2014033194A (ja) 2014-02-20
JP2014033194A5 JP2014033194A5 (enExample) 2016-08-25
JP6301600B2 true JP6301600B2 (ja) 2018-03-28

Family

ID=49913207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013145786A Expired - Fee Related JP6301600B2 (ja) 2012-07-13 2013-07-11 半導体装置

Country Status (3)

Country Link
US (1) US20140014947A1 (enExample)
JP (1) JP6301600B2 (enExample)
KR (1) KR20140009023A (enExample)

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US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
WO2014021442A1 (en) 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
CN104584229B (zh) 2012-08-10 2018-05-15 株式会社半导体能源研究所 半导体装置及其制造方法
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI671910B (zh) 2012-09-24 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
CN118588742A (zh) * 2014-02-21 2024-09-03 株式会社半导体能源研究所 半导体膜、晶体管、半导体装置、显示装置以及电子设备
JP2015180994A (ja) * 2014-03-06 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
US9324747B2 (en) * 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
CN104167448B (zh) * 2014-08-05 2017-06-30 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
KR102518392B1 (ko) * 2014-12-16 2023-04-06 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104916703B (zh) * 2015-05-07 2018-07-31 京东方科技集团股份有限公司 一种氧化物薄膜晶体管、阵列基板和显示装置
US10297694B2 (en) 2015-10-14 2019-05-21 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN110024135B (zh) * 2016-12-02 2023-10-17 株式会社半导体能源研究所 半导体装置
KR102752953B1 (ko) 2017-06-05 2025-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2019067791A (ja) * 2017-09-28 2019-04-25 シャープ株式会社 半導体装置
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
KR102584244B1 (ko) * 2018-09-21 2023-10-05 주성엔지니어링(주) 박막 트랜지스터 및 이의 제조 방법
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
WO2020089733A1 (ja) 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
WO2020240332A1 (ja) * 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20220230878A1 (en) * 2019-09-05 2022-07-21 Hewlett-Packard Development Company, L.P. Semiconductor composite layers
CN113838801B (zh) * 2020-06-24 2024-10-22 京东方科技集团股份有限公司 半导体基板的制造方法和半导体基板
KR20230063231A (ko) 2021-11-01 2023-05-09 삼성전자주식회사 반도체 장치
CN114695394A (zh) * 2022-03-29 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板和显示面板

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Publication number Publication date
US20140014947A1 (en) 2014-01-16
JP2014033194A (ja) 2014-02-20
KR20140009023A (ko) 2014-01-22

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