KR20140009023A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20140009023A
KR20140009023A KR1020130071457A KR20130071457A KR20140009023A KR 20140009023 A KR20140009023 A KR 20140009023A KR 1020130071457 A KR1020130071457 A KR 1020130071457A KR 20130071457 A KR20130071457 A KR 20130071457A KR 20140009023 A KR20140009023 A KR 20140009023A
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KR
South Korea
Prior art keywords
oxide semiconductor
layer
semiconductor layer
film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020130071457A
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English (en)
Korean (ko)
Inventor
？페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20140009023A publication Critical patent/KR20140009023A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020130071457A 2012-07-13 2013-06-21 반도체 장치 Withdrawn KR20140009023A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-157653 2012-07-13
JP2012157653 2012-07-13

Publications (1)

Publication Number Publication Date
KR20140009023A true KR20140009023A (ko) 2014-01-22

Family

ID=49913207

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130071457A Withdrawn KR20140009023A (ko) 2012-07-13 2013-06-21 반도체 장치

Country Status (3)

Country Link
US (1) US20140014947A1 (enExample)
JP (1) JP6301600B2 (enExample)
KR (1) KR20140009023A (enExample)

Cited By (1)

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KR20200034457A (ko) * 2018-09-21 2020-03-31 주성엔지니어링(주) 박막 트랜지스터 및 이의 제조 방법

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JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
WO2014021442A1 (en) 2012-08-03 2014-02-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
CN104584229B (zh) 2012-08-10 2018-05-15 株式会社半导体能源研究所 半导体装置及其制造方法
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI671910B (zh) 2012-09-24 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
CN118588742A (zh) * 2014-02-21 2024-09-03 株式会社半导体能源研究所 半导体膜、晶体管、半导体装置、显示装置以及电子设备
JP2015180994A (ja) * 2014-03-06 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
US9324747B2 (en) * 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
CN104167448B (zh) * 2014-08-05 2017-06-30 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
KR102518392B1 (ko) * 2014-12-16 2023-04-06 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104916703B (zh) * 2015-05-07 2018-07-31 京东方科技集团股份有限公司 一种氧化物薄膜晶体管、阵列基板和显示装置
US10297694B2 (en) 2015-10-14 2019-05-21 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN110024135B (zh) * 2016-12-02 2023-10-17 株式会社半导体能源研究所 半导体装置
KR102752953B1 (ko) 2017-06-05 2025-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2019067791A (ja) * 2017-09-28 2019-04-25 シャープ株式会社 半導体装置
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
WO2020089733A1 (ja) 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
WO2020240332A1 (ja) * 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20220230878A1 (en) * 2019-09-05 2022-07-21 Hewlett-Packard Development Company, L.P. Semiconductor composite layers
CN113838801B (zh) * 2020-06-24 2024-10-22 京东方科技集团股份有限公司 半导体基板的制造方法和半导体基板
KR20230063231A (ko) 2021-11-01 2023-05-09 삼성전자주식회사 반도체 장치
CN114695394A (zh) * 2022-03-29 2022-07-01 广州华星光电半导体显示技术有限公司 阵列基板和显示面板

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JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200034457A (ko) * 2018-09-21 2020-03-31 주성엔지니어링(주) 박막 트랜지스터 및 이의 제조 방법
KR20220137863A (ko) * 2018-09-21 2022-10-12 주성엔지니어링(주) 박막 트랜지스터 및 이의 제조 방법

Also Published As

Publication number Publication date
US20140014947A1 (en) 2014-01-16
JP6301600B2 (ja) 2018-03-28
JP2014033194A (ja) 2014-02-20

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20130621

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid