JP6301578B2 - エッチング装置及び方法 - Google Patents

エッチング装置及び方法 Download PDF

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Publication number
JP6301578B2
JP6301578B2 JP2012250063A JP2012250063A JP6301578B2 JP 6301578 B2 JP6301578 B2 JP 6301578B2 JP 2012250063 A JP2012250063 A JP 2012250063A JP 2012250063 A JP2012250063 A JP 2012250063A JP 6301578 B2 JP6301578 B2 JP 6301578B2
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Japan
Prior art keywords
etching
substrate
camera
scattered
detection
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JP2012250063A
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English (en)
Japanese (ja)
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JP2013106050A5 (enExample
JP2013106050A (ja
Inventor
ジェイ アンセル オリバー
ジェイ アンセル オリバー
Original Assignee
エスピーティーエス テクノロジーズ リミティド
エスピーティーエス テクノロジーズ リミティド
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Publication of JP2013106050A publication Critical patent/JP2013106050A/ja
Publication of JP2013106050A5 publication Critical patent/JP2013106050A5/ja
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP2012250063A 2011-11-14 2012-11-14 エッチング装置及び方法 Active JP6301578B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods
GB1119598.9 2011-11-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017203582A Division JP2018014538A (ja) 2011-11-14 2017-10-20 エッチング装置及び方法

Publications (3)

Publication Number Publication Date
JP2013106050A JP2013106050A (ja) 2013-05-30
JP2013106050A5 JP2013106050A5 (enExample) 2016-01-07
JP6301578B2 true JP6301578B2 (ja) 2018-03-28

Family

ID=45444084

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012250063A Active JP6301578B2 (ja) 2011-11-14 2012-11-14 エッチング装置及び方法
JP2017203582A Pending JP2018014538A (ja) 2011-11-14 2017-10-20 エッチング装置及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017203582A Pending JP2018014538A (ja) 2011-11-14 2017-10-20 エッチング装置及び方法

Country Status (6)

Country Link
EP (1) EP2592646B1 (enExample)
JP (2) JP6301578B2 (enExample)
KR (3) KR101986845B1 (enExample)
CN (1) CN103107113B (enExample)
GB (1) GB201119598D0 (enExample)
TW (1) TWI575551B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134618B (zh) * 2014-06-12 2017-12-08 京东方科技集团股份有限公司 一种关键图形的尺寸检测装置及尺寸检测方法
JP6896771B2 (ja) * 2016-06-13 2021-06-30 エーエスエムエル ネザーランズ ビー.ブイ. 基板上のターゲット構造の位置を決定するための方法及び装置、並びに、基板の位置を決定するための方法及び装置
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
GB201916079D0 (en) 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028233A (ja) * 1983-07-27 1985-02-13 Hitachi Ltd エツチングのモニタ装置
JPS60124823A (ja) * 1983-12-09 1985-07-03 Hitachi Ltd エツチング・モニタ方法
JPS62171127A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd エツチングの終点検出方法
JP3044728B2 (ja) * 1989-12-26 2000-05-22 ソニー株式会社 埋め込みプラグの製造方法
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP4567828B2 (ja) * 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
JP2001319922A (ja) * 2000-05-10 2001-11-16 Nec Corp 異常放電検出装置および検出方法
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法,エッチング方法,およびエッチング装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP4278497B2 (ja) * 2003-11-26 2009-06-17 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
US8492178B2 (en) * 2007-02-23 2013-07-23 Rudolph Technologies, Inc. Method of monitoring fabrication processing including edge bead removal processing
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
CN103107113B (zh) 2017-03-01
KR102287783B1 (ko) 2021-08-06
JP2013106050A (ja) 2013-05-30
CN103107113A (zh) 2013-05-15
KR20130054187A (ko) 2013-05-24
JP2018014538A (ja) 2018-01-25
KR101986845B1 (ko) 2019-06-07
TW201331977A (zh) 2013-08-01
EP2592646A2 (en) 2013-05-15
EP2592646B1 (en) 2020-09-23
GB201119598D0 (en) 2011-12-28
TWI575551B (zh) 2017-03-21
EP2592646A3 (en) 2017-05-24
KR20190044046A (ko) 2019-04-29
KR20200001587A (ko) 2020-01-06

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