GB201119598D0 - Etching apparatus and methods - Google Patents

Etching apparatus and methods

Info

Publication number
GB201119598D0
GB201119598D0 GBGB1119598.9A GB201119598A GB201119598D0 GB 201119598 D0 GB201119598 D0 GB 201119598D0 GB 201119598 A GB201119598 A GB 201119598A GB 201119598 D0 GB201119598 D0 GB 201119598D0
Authority
GB
United Kingdom
Prior art keywords
methods
etching apparatus
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1119598.9A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Priority to GBGB1119598.9A priority Critical patent/GB201119598D0/en
Publication of GB201119598D0 publication Critical patent/GB201119598D0/en
Priority to EP12192364.3A priority patent/EP2592646B1/en
Priority to TW101142192A priority patent/TWI575551B/zh
Priority to KR1020120128864A priority patent/KR101986845B1/ko
Priority to JP2012250063A priority patent/JP6301578B2/ja
Priority to CN201210459115.8A priority patent/CN103107113B/zh
Priority to JP2017203582A priority patent/JP2018014538A/ja
Priority to KR1020190046075A priority patent/KR20190044046A/ko
Priority to KR1020190176393A priority patent/KR102287783B1/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
GBGB1119598.9A 2011-11-14 2011-11-14 Etching apparatus and methods Ceased GB201119598D0 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods
EP12192364.3A EP2592646B1 (en) 2011-11-14 2012-11-13 Etching Apparatus and Methods
TW101142192A TWI575551B (zh) 2011-11-14 2012-11-13 蝕刻裝置及方法
KR1020120128864A KR101986845B1 (ko) 2011-11-14 2012-11-14 에칭 장치 및 방법
JP2012250063A JP6301578B2 (ja) 2011-11-14 2012-11-14 エッチング装置及び方法
CN201210459115.8A CN103107113B (zh) 2011-11-14 2012-11-14 刻蚀装置和方法
JP2017203582A JP2018014538A (ja) 2011-11-14 2017-10-20 エッチング装置及び方法
KR1020190046075A KR20190044046A (ko) 2011-11-14 2019-04-19 에칭 장치 및 방법
KR1020190176393A KR102287783B1 (ko) 2011-11-14 2019-12-27 에칭 장치 및 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods

Publications (1)

Publication Number Publication Date
GB201119598D0 true GB201119598D0 (en) 2011-12-28

Family

ID=45444084

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1119598.9A Ceased GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods

Country Status (6)

Country Link
EP (1) EP2592646B1 (enExample)
JP (2) JP6301578B2 (enExample)
KR (3) KR101986845B1 (enExample)
CN (1) CN103107113B (enExample)
GB (1) GB201119598D0 (enExample)
TW (1) TWI575551B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134618B (zh) * 2014-06-12 2017-12-08 京东方科技集团股份有限公司 一种关键图形的尺寸检测装置及尺寸检测方法
WO2017215924A1 (en) * 2016-06-13 2017-12-21 Asml Netherlands B.V. Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
GB201916079D0 (en) * 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028233A (ja) * 1983-07-27 1985-02-13 Hitachi Ltd エツチングのモニタ装置
JPS60124823A (ja) * 1983-12-09 1985-07-03 Hitachi Ltd エツチング・モニタ方法
JPS62171127A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd エツチングの終点検出方法
JP3044728B2 (ja) * 1989-12-26 2000-05-22 ソニー株式会社 埋め込みプラグの製造方法
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP4567828B2 (ja) * 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
JP2001319922A (ja) * 2000-05-10 2001-11-16 Nec Corp 異常放電検出装置および検出方法
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP4278497B2 (ja) * 2003-11-26 2009-06-17 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
TW201331977A (zh) 2013-08-01
TWI575551B (zh) 2017-03-21
JP2018014538A (ja) 2018-01-25
EP2592646A3 (en) 2017-05-24
EP2592646B1 (en) 2020-09-23
KR101986845B1 (ko) 2019-06-07
CN103107113B (zh) 2017-03-01
JP2013106050A (ja) 2013-05-30
KR20130054187A (ko) 2013-05-24
CN103107113A (zh) 2013-05-15
JP6301578B2 (ja) 2018-03-28
KR20200001587A (ko) 2020-01-06
KR20190044046A (ko) 2019-04-29
EP2592646A2 (en) 2013-05-15
KR102287783B1 (ko) 2021-08-06

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)