CN103107113B - 刻蚀装置和方法 - Google Patents

刻蚀装置和方法 Download PDF

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Publication number
CN103107113B
CN103107113B CN201210459115.8A CN201210459115A CN103107113B CN 103107113 B CN103107113 B CN 103107113B CN 201210459115 A CN201210459115 A CN 201210459115A CN 103107113 B CN103107113 B CN 103107113B
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CN
China
Prior art keywords
etching
substrate
face
light
edge
Prior art date
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Active
Application number
CN201210459115.8A
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English (en)
Chinese (zh)
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CN103107113A (zh
Inventor
奥立佛·J·安塞尔
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SPTS Technologies Ltd
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SPTS Technologies Ltd
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Publication date
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Publication of CN103107113A publication Critical patent/CN103107113A/zh
Application granted granted Critical
Publication of CN103107113B publication Critical patent/CN103107113B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
CN201210459115.8A 2011-11-14 2012-11-14 刻蚀装置和方法 Active CN103107113B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1119598.9 2011-11-14
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods

Publications (2)

Publication Number Publication Date
CN103107113A CN103107113A (zh) 2013-05-15
CN103107113B true CN103107113B (zh) 2017-03-01

Family

ID=45444084

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210459115.8A Active CN103107113B (zh) 2011-11-14 2012-11-14 刻蚀装置和方法

Country Status (6)

Country Link
EP (1) EP2592646B1 (enExample)
JP (2) JP6301578B2 (enExample)
KR (3) KR101986845B1 (enExample)
CN (1) CN103107113B (enExample)
GB (1) GB201119598D0 (enExample)
TW (1) TWI575551B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134618B (zh) * 2014-06-12 2017-12-08 京东方科技集团股份有限公司 一种关键图形的尺寸检测装置及尺寸检测方法
WO2017215924A1 (en) * 2016-06-13 2017-12-21 Asml Netherlands B.V. Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
GB201916079D0 (en) * 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541388B1 (en) * 1999-09-14 2003-04-01 Tokyo Electron Limited Plasma etching termination detecting method
US6670200B2 (en) * 1998-05-21 2003-12-30 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
CN1574243A (zh) * 2003-06-05 2005-02-02 东京毅力科创株式会社 蚀刻量检测方法、蚀刻方法和蚀刻装置
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028233A (ja) * 1983-07-27 1985-02-13 Hitachi Ltd エツチングのモニタ装置
JPS60124823A (ja) * 1983-12-09 1985-07-03 Hitachi Ltd エツチング・モニタ方法
JPS62171127A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd エツチングの終点検出方法
JP3044728B2 (ja) * 1989-12-26 2000-05-22 ソニー株式会社 埋め込みプラグの製造方法
JP2001319922A (ja) * 2000-05-10 2001-11-16 Nec Corp 異常放電検出装置および検出方法
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP4278497B2 (ja) * 2003-11-26 2009-06-17 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670200B2 (en) * 1998-05-21 2003-12-30 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6541388B1 (en) * 1999-09-14 2003-04-01 Tokyo Electron Limited Plasma etching termination detecting method
CN1574243A (zh) * 2003-06-05 2005-02-02 东京毅力科创株式会社 蚀刻量检测方法、蚀刻方法和蚀刻装置
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Also Published As

Publication number Publication date
TW201331977A (zh) 2013-08-01
TWI575551B (zh) 2017-03-21
GB201119598D0 (en) 2011-12-28
JP2018014538A (ja) 2018-01-25
EP2592646A3 (en) 2017-05-24
EP2592646B1 (en) 2020-09-23
KR101986845B1 (ko) 2019-06-07
JP2013106050A (ja) 2013-05-30
KR20130054187A (ko) 2013-05-24
CN103107113A (zh) 2013-05-15
JP6301578B2 (ja) 2018-03-28
KR20200001587A (ko) 2020-01-06
KR20190044046A (ko) 2019-04-29
EP2592646A2 (en) 2013-05-15
KR102287783B1 (ko) 2021-08-06

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