KR101986845B1 - 에칭 장치 및 방법 - Google Patents

에칭 장치 및 방법 Download PDF

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Publication number
KR101986845B1
KR101986845B1 KR1020120128864A KR20120128864A KR101986845B1 KR 101986845 B1 KR101986845 B1 KR 101986845B1 KR 1020120128864 A KR1020120128864 A KR 1020120128864A KR 20120128864 A KR20120128864 A KR 20120128864A KR 101986845 B1 KR101986845 B1 KR 101986845B1
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South Korea
Prior art keywords
etching
substrate
light
camera
scattered
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KR1020120128864A
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English (en)
Korean (ko)
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KR20130054187A (ko
Inventor
올리버 제이 안셀
Original Assignee
에스피티에스 테크놀러지스 리미티드
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Publication of KR20130054187A publication Critical patent/KR20130054187A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
KR1020120128864A 2011-11-14 2012-11-14 에칭 장치 및 방법 Active KR101986845B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1119598.9 2011-11-14
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190046075A Division KR20190044046A (ko) 2011-11-14 2019-04-19 에칭 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20130054187A KR20130054187A (ko) 2013-05-24
KR101986845B1 true KR101986845B1 (ko) 2019-06-07

Family

ID=45444084

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020120128864A Active KR101986845B1 (ko) 2011-11-14 2012-11-14 에칭 장치 및 방법
KR1020190046075A Ceased KR20190044046A (ko) 2011-11-14 2019-04-19 에칭 장치 및 방법
KR1020190176393A Active KR102287783B1 (ko) 2011-11-14 2019-12-27 에칭 장치 및 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020190046075A Ceased KR20190044046A (ko) 2011-11-14 2019-04-19 에칭 장치 및 방법
KR1020190176393A Active KR102287783B1 (ko) 2011-11-14 2019-12-27 에칭 장치 및 방법

Country Status (6)

Country Link
EP (1) EP2592646B1 (enExample)
JP (2) JP6301578B2 (enExample)
KR (3) KR101986845B1 (enExample)
CN (1) CN103107113B (enExample)
GB (1) GB201119598D0 (enExample)
TW (1) TWI575551B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134618B (zh) * 2014-06-12 2017-12-08 京东方科技集团股份有限公司 一种关键图形的尺寸检测装置及尺寸检测方法
WO2017215924A1 (en) * 2016-06-13 2017-12-21 Asml Netherlands B.V. Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
GB201916079D0 (en) * 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
US20110054659A1 (en) * 2007-02-23 2011-03-03 Rudolph Technologies, Inc. Wafer fabrication monitoring systems and methods, including edge bead removal processing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028233A (ja) * 1983-07-27 1985-02-13 Hitachi Ltd エツチングのモニタ装置
JPS60124823A (ja) * 1983-12-09 1985-07-03 Hitachi Ltd エツチング・モニタ方法
JPS62171127A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd エツチングの終点検出方法
JP3044728B2 (ja) * 1989-12-26 2000-05-22 ソニー株式会社 埋め込みプラグの製造方法
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP4567828B2 (ja) * 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
JP2001319922A (ja) * 2000-05-10 2001-11-16 Nec Corp 異常放電検出装置および検出方法
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
JP4278497B2 (ja) * 2003-11-26 2009-06-17 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
US20110054659A1 (en) * 2007-02-23 2011-03-03 Rudolph Technologies, Inc. Wafer fabrication monitoring systems and methods, including edge bead removal processing
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
TW201331977A (zh) 2013-08-01
TWI575551B (zh) 2017-03-21
GB201119598D0 (en) 2011-12-28
JP2018014538A (ja) 2018-01-25
EP2592646A3 (en) 2017-05-24
EP2592646B1 (en) 2020-09-23
CN103107113B (zh) 2017-03-01
JP2013106050A (ja) 2013-05-30
KR20130054187A (ko) 2013-05-24
CN103107113A (zh) 2013-05-15
JP6301578B2 (ja) 2018-03-28
KR20200001587A (ko) 2020-01-06
KR20190044046A (ko) 2019-04-29
EP2592646A2 (en) 2013-05-15
KR102287783B1 (ko) 2021-08-06

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