JP6299869B2 - 絶縁ゲート型パワー半導体素子のゲート駆動回路 - Google Patents
絶縁ゲート型パワー半導体素子のゲート駆動回路 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 89
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/081—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters wherein the phase of the control voltage is adjustable with reference to the AC source
- H02M1/082—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters wherein the phase of the control voltage is adjustable with reference to the AC source with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/084—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
- H02M1/0845—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system digitally controlled (or with digital control)
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/162—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
- H02M7/1623—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration with control circuit
- H02M7/1626—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration with control circuit with automatic control of the output voltage or current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Description
図1はこの発明の実施の形態1における絶縁ゲート型パワー半導体素子のゲート駆動回路の図である。
図2はこの発明の実施の形態1における絶縁ゲート型パワー半導体素子の特性を説明する図である。
図3はこの発明の実施の形態2における絶縁ゲート型パワー半導体素子のゲート駆動回路の図である。なお、実施の形態1の部分と同一又は相当部分には同一符号が付される。当該部分の説明は省略される。
図4はこの発明の実施の形態3における絶縁ゲート型パワー半導体素子のゲート駆動回路の図である。なお、実施の形態2の部分と同一又は相当部分には同一符号が付される。当該部分の説明は省略される。
第2負側電源、 10 正側ツェナーダイオード、 11 負側ツェナーダイオード
Claims (7)
- ソース電極とドレイン電極とゲート電極とを有し、ソース電極が絶縁ゲート型パワー半導体素子のゲート電極に接続され、正電圧がドレイン電極に印加された状態で正電圧がゲート電極に印加された際にオンとなることで前記絶縁ゲート型パワー半導体素子をオンにするNchMOSFETと、
ソース電極とドレイン電極とゲート電極とを有し、ソース電極が前記絶縁ゲート型パワー半導体素子のゲート電極に接続され、負電圧がドレイン電極に印加された状態で負電圧がゲート電極に印加された際にオンとなることで前記絶縁ゲート型パワー半導体素子をオフにするPchMOSFETと、
制御電極と正側電極と負側電極とを有し、制御電極が前記NchMOSFETのゲート電極と前記PchMOSFETのゲート電極とに接続され、正電圧が正側電極に印加された状態の際に当該正電圧を前記NchMOSFETのゲート電極に印加することで前記NchMOSFETをオンにし、負電圧が負側電極に印加された状態の際に当該負電圧を前記PchMOSFETのゲート電極に印加することで前記PchMOSFETをオンにする制御回路と、
負電圧を前記PchMOSFETのドレイン電極と前記制御回路の負側電極とに印加し、正電圧を前記NchMOSFETのドレイン電極に印加し、前記NchMOSFETのドレイン電極に印加する正電圧の絶対値よりも大きい絶対値の正電圧を前記制御回路の正側電極に印加する電源体と、
を備えた絶縁ゲート型パワー半導体素子のゲート駆動回路。 - 前記電源体は、
前記NchMOSFETのドレイン電極に接続された正側電極と前記絶縁ゲート型パワー半導体素子のソース電極に接続された負側電極とを有し、正電圧を前記NchMOSFETのドレイン電極に印加する第1正側電源と、
前記制御回路の正側電極に接続された正側電極と前記絶縁ゲート型パワー半導体素子のソース電極に接続された負側電極とを有し、前記第1正側電源が前記NchMOSFETのドレイン電極に印加する正電圧の絶対値よりも大きい絶対値の正電圧を前記制御回路の正側電極に印加する第2正側電源と、
を備えた請求項1に記載の絶縁ゲート型パワー半導体素子のゲート駆動回路。 - 前記NchMOSFETのゲート電極とソース電極との間に接続された正側ツェナーダイオード、
を備えた請求項1または請求項2に記載の絶縁ゲート型パワー半導体素子のゲート駆動回路。 - 前記電源体は、前記PchMOSFETのドレイン電極に印加する負電圧の絶対値よりも大きい絶対値の負電圧を前記制御回路の負側電極に印加する請求項1から請求項3のいずれか一項に記載の絶縁ゲート型パワー半導体素子のゲート駆動回路。
- 前記電源体は、
前記絶縁ゲート型パワー半導体素子のソース電極に接続された正側電極と前記PchMOSFETのドレイン電極に接続された負側電極とを有し、負電圧を前記PchMOSFETのドレイン電極に印加する第1負側電源と、
前記絶縁ゲート型パワー半導体素子のソース電極に接続された正側電極と前記制御回路の負側電極に接続された負側電極とを有し、前記第1負側電源が前記PchMOSFETのドレイン電極に印加する負電圧の絶対値よりも大きい絶対値の負電圧を前記制御回路の負側電極に印加する第2負側電源と、
を備えた請求項4に記載の絶縁ゲート型パワー半導体素子のゲート駆動回路。 - 前記PchMOSFETのゲート電極とソース電極との間に接続された負側ツェナーダイオード、
を備えた請求項1から請求項5のいずれか一項に記載の絶縁ゲート型パワー半導体素子のゲート駆動回路。 - 前記絶縁ゲート型パワー半導体素子は、ワイドバンドギャップ半導体により形成された請求項1から請求項6のいずれか一項に記載の絶縁ゲート型パワー半導体素子のゲート駆動回路。
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JP2795027B2 (ja) | 1992-02-17 | 1998-09-10 | 三菱電機株式会社 | Igbtのゲート駆動回路 |
JPH06244698A (ja) * | 1993-02-19 | 1994-09-02 | Pfu Ltd | ゲート・ドライブ回路 |
US5399920A (en) * | 1993-11-09 | 1995-03-21 | Texas Instruments Incorporated | CMOS driver which uses a higher voltage to compensate for threshold loss of the pull-up NFET |
DE19806311A1 (de) * | 1998-02-16 | 1999-08-26 | Siemens Ag | Vorrichtung zum Schalten induktiver Verbraucher |
US6593622B2 (en) * | 2001-05-02 | 2003-07-15 | International Rectifier Corporation | Power mosfet with integrated drivers in a common package |
JP3636140B2 (ja) * | 2002-02-04 | 2005-04-06 | サンケン電気株式会社 | ゲート駆動回路 |
JP2005108980A (ja) * | 2003-09-29 | 2005-04-21 | Rohm Co Ltd | 半導体装置 |
CN101816128B (zh) * | 2007-10-05 | 2015-09-02 | 爱立信电话股份有限公司 | 用于动力开关元件的驱动电路 |
CN103620930B (zh) * | 2011-06-09 | 2016-04-06 | 三菱电机株式会社 | 栅极驱动电路 |
TWI513190B (zh) * | 2011-07-22 | 2015-12-11 | Hon Hai Prec Ind Co Ltd | 使金氧半導體場效電晶體輸出線性電流的閘極驅動電路 |
JP5545308B2 (ja) * | 2012-02-28 | 2014-07-09 | 株式会社豊田中央研究所 | 駆動回路 |
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US8742803B2 (en) * | 2012-09-26 | 2014-06-03 | Broadcom Corporation | Output driver using low voltage transistors |
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