JP6299581B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6299581B2
JP6299581B2 JP2014255382A JP2014255382A JP6299581B2 JP 6299581 B2 JP6299581 B2 JP 6299581B2 JP 2014255382 A JP2014255382 A JP 2014255382A JP 2014255382 A JP2014255382 A JP 2014255382A JP 6299581 B2 JP6299581 B2 JP 6299581B2
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Japan
Prior art keywords
drift layer
well region
insulating film
semiconductor device
field plate
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JP2014255382A
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English (en)
Japanese (ja)
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JP2016115886A5 (enExample
JP2016115886A (ja
Inventor
藤田　光一
光一 藤田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014255382A priority Critical patent/JP6299581B2/ja
Priority to US14/879,564 priority patent/US10256336B2/en
Publication of JP2016115886A publication Critical patent/JP2016115886A/ja
Publication of JP2016115886A5 publication Critical patent/JP2016115886A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0287—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2014255382A 2014-12-17 2014-12-17 半導体装置 Active JP6299581B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014255382A JP6299581B2 (ja) 2014-12-17 2014-12-17 半導体装置
US14/879,564 US10256336B2 (en) 2014-12-17 2015-10-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014255382A JP6299581B2 (ja) 2014-12-17 2014-12-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2016115886A JP2016115886A (ja) 2016-06-23
JP2016115886A5 JP2016115886A5 (enExample) 2017-02-09
JP6299581B2 true JP6299581B2 (ja) 2018-03-28

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Family Applications (1)

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JP2014255382A Active JP6299581B2 (ja) 2014-12-17 2014-12-17 半導体装置

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US (1) US10256336B2 (enExample)
JP (1) JP6299581B2 (enExample)

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DE102016107714B4 (de) 2015-08-14 2019-07-18 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit einer Transistorzelle, die einen Sourcekontakt in einem Graben umfasst, Verfahren zum Herstellen der Halbleitervorrichtung und integrierte Schaltung
US10381274B2 (en) * 2016-02-09 2019-08-13 Fuji Electric Co., Ltd. Assessment method, and semiconductor device manufacturing method
JP6347308B2 (ja) 2016-02-26 2018-06-27 富士電機株式会社 半導体装置および半導体装置の製造方法
US11127822B2 (en) * 2016-02-26 2021-09-21 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
WO2018060918A1 (en) * 2016-09-28 2018-04-05 Ecole Polytechnique Federale De Lausanne (Epfl) Semiconductor device comprising a three-dimensional field plate
CN109326642B (zh) * 2017-08-01 2020-12-29 无锡华润华晶微电子有限公司 Vdmos晶体管及制作vdmos晶体管的方法
DE102017120943B4 (de) * 2017-09-11 2019-05-09 Infineon Technologies Austria Ag Verfahren zur Herstellung eines MOSFETs
CN107611089B (zh) * 2017-09-19 2024-03-26 宁波宝芯源功率半导体有限公司 用于锂电保护的开关器件及其制作方法
JP7031238B2 (ja) * 2017-11-09 2022-03-08 株式会社豊田中央研究所 窒化物半導体装置とその製造方法
CN108565289A (zh) * 2018-06-26 2018-09-21 南京方旭智芯微电子科技有限公司 超结场效应管及超结场效应管的制造方法
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法
CN109065629B (zh) * 2018-08-24 2021-02-23 电子科技大学 一种槽栅超结器件
CN112823414B (zh) 2019-04-16 2024-07-30 富士电机株式会社 半导体装置及制造方法
JP7476485B2 (ja) * 2019-05-17 2024-05-01 富士電機株式会社 窒化物半導体装置
GB2585696B (en) * 2019-07-12 2021-12-15 Mqsemi Ag Semiconductor device and method for producing same
CN110828497B (zh) * 2019-11-19 2022-03-18 上海华力微电子有限公司 一种垂直栅cmos图像传感器及制造方法
GB2590716B (en) * 2019-12-30 2023-12-20 Mqsemi Ag Fortified trench planar MOS power transistor
WO2022006731A1 (en) * 2020-07-07 2022-01-13 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and fabrication method thereof
JP2022046240A (ja) * 2020-09-10 2022-03-23 株式会社東芝 半導体装置
TW202410448A (zh) * 2022-08-29 2024-03-01 聯華電子股份有限公司 半導體裝置以及其製作方法
CN119603999B (zh) * 2025-02-08 2025-05-02 杭州谱析光晶半导体科技有限公司 一种浅沟道超结mos半导体器件及其制备工艺

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JPS63266882A (ja) * 1987-04-24 1988-11-02 Hitachi Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
JPH02231771A (ja) * 1989-03-03 1990-09-13 Nec Corp 縦型電界効果トランジスタ
DE19611045C1 (de) * 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
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US10256336B2 (en) 2019-04-09
JP2016115886A (ja) 2016-06-23
US20160181413A1 (en) 2016-06-23

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