JP6292499B2 - 波長可変レーザの制御方法 - Google Patents

波長可変レーザの制御方法 Download PDF

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Publication number
JP6292499B2
JP6292499B2 JP2013180166A JP2013180166A JP6292499B2 JP 6292499 B2 JP6292499 B2 JP 6292499B2 JP 2013180166 A JP2013180166 A JP 2013180166A JP 2013180166 A JP2013180166 A JP 2013180166A JP 6292499 B2 JP6292499 B2 JP 6292499B2
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Prior art keywords
wavelength
temperature
tunable laser
etalon
wavelength tunable
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JP2013180166A
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Japanese (ja)
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JP2015050283A5 (enExample
JP2015050283A (ja
Inventor
田中　宏和
宏和 田中
雅央 柴田
雅央 柴田
充宜 宮田
充宜 宮田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2013180166A priority Critical patent/JP6292499B2/ja
Priority to US14/473,725 priority patent/US9819148B2/en
Publication of JP2015050283A publication Critical patent/JP2015050283A/ja
Publication of JP2015050283A5 publication Critical patent/JP2015050283A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2013180166A 2013-08-30 2013-08-30 波長可変レーザの制御方法 Active JP6292499B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013180166A JP6292499B2 (ja) 2013-08-30 2013-08-30 波長可変レーザの制御方法
US14/473,725 US9819148B2 (en) 2013-08-30 2014-08-29 Method for controlling tunable wavelength laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013180166A JP6292499B2 (ja) 2013-08-30 2013-08-30 波長可変レーザの制御方法

Publications (3)

Publication Number Publication Date
JP2015050283A JP2015050283A (ja) 2015-03-16
JP2015050283A5 JP2015050283A5 (enExample) 2016-10-06
JP6292499B2 true JP6292499B2 (ja) 2018-03-14

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US (1) US9819148B2 (enExample)
JP (1) JP6292499B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153939B1 (en) * 2013-03-15 2015-10-06 Insight Photonic Solutions, Inc. System and method for generating and utilizing sample trigger blanking to obviate spurious data and increase sweep rate in an akinetic path-based swept laser
JP7019283B2 (ja) * 2016-02-15 2022-02-15 古河電気工業株式会社 波長可変型レーザモジュールおよびその波長制御方法
JP6821901B2 (ja) 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
JP7207651B2 (ja) * 2018-12-27 2023-01-18 住友電工デバイス・イノベーション株式会社 波長可変レーザ装置の制御方法
CN112397996B (zh) * 2019-08-16 2022-04-15 中国移动通信有限公司研究院 波长调整方法、装置及光模块
JP7488053B2 (ja) * 2020-02-06 2024-05-21 古河電気工業株式会社 レーザ装置およびその制御方法
GB202004167D0 (en) * 2020-03-23 2020-05-06 Fraunhofer Uk Res Ltd Single-frequency laser apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080235A (ja) * 2004-09-08 2006-03-23 Nippon Telegr & Teleph Corp <Ntt> 光通信用光源部
JP4943255B2 (ja) 2007-07-20 2012-05-30 住友電工デバイス・イノベーション株式会社 半導体レーザの制御方法
US7929581B2 (en) * 2007-12-28 2011-04-19 Eudyna Devices Inc. Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device
JP5229163B2 (ja) * 2009-09-01 2013-07-03 富士通オプティカルコンポーネンツ株式会社 波長制御方法および光送信装置
JP2011108910A (ja) * 2009-11-19 2011-06-02 Sumitomo Electric Ind Ltd 光半導体装置
JP5457873B2 (ja) * 2010-02-18 2014-04-02 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6253082B2 (ja) * 2012-07-31 2017-12-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6308456B2 (ja) * 2013-07-31 2018-04-11 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP2015050284A (ja) * 2013-08-30 2015-03-16 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6304582B2 (ja) * 2013-10-30 2018-04-04 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
US9231369B2 (en) * 2013-10-31 2016-01-05 Sumitomo Electric Device Innovations, Inc. Method for controlling wavelength tunable laser
JP6319718B2 (ja) * 2013-11-29 2018-05-09 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP2015126195A (ja) * 2013-12-27 2015-07-06 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP2015144191A (ja) * 2014-01-31 2015-08-06 住友電工デバイス・イノベーション株式会社 波長可変レーザの波長切り替え方法
JP6319721B2 (ja) * 2014-01-31 2018-05-09 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法

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JP2015050283A (ja) 2015-03-16
US9819148B2 (en) 2017-11-14
US20150063383A1 (en) 2015-03-05

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