JP6319718B2 - 波長可変レーザの制御方法 - Google Patents
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 123
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- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
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- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
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- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H01S5/00—Semiconductor lasers
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Description
最初に本願発明の実施形態の内容を列記して説明する。
(2)前記第3ステップの前に、前記第2制御値に基づいて前記エタロンの波長特性を定めるとともに、前記第1目標値を前記波長検知部によって得られた波長検知結果の制御目標値と定めて前記波長可変レーザの波長を制御する第5ステップを含んでいてもよい。
(3)前記エタロンの波長特性の制御値は、エタロンの温度であり、前記エタロンの温度は、ペルチェ素子を含む温度制御装置によって制御されてもよい。
(4)前記第3ステップで入力されるシフト量の符号に応じて、前記第3ステップの選択を行ってもよい。
(5)前記第3ステップにおいて、前記温度制御装置の消費電力が小さい方を選択してもよい。
(6)前記エタロンの温度と、前記エタロンの周囲温度との関係に応じて、前記第3ステップの選択を行ってもよい。
本発明の実施形態に係る波長可変レーザの具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
Tetln_A=Tetln_B+ΔF1/C1 (1)
第2温度制御装置53の温度を設定温度Tetln_Aに制御することによって、比Im2/Im1をそのまま利用して、グリッドレス制御の要求波長を得ることが可能となる。
Tetln_C=Tetln_A+ΔF2/C2 (2)
第2温度制御装置53の温度を設定温度Tetln_Cに制御することによって、比Im2/Im1をそのまま利用して、要求波長を得ることが可能となる。なお、温度補正係数C2は、図6に示すように、メモリ60に格納されている。温度補正係数C2は、温度補正係数C1と同じ値であってもよいが、ファインチューニング用に温度補正係数C1と異なる値に設定されていてもよい。
Target_A=Target_B+ΔF2/B1 (3)
フィードバック制御目標値の比Im2/Im1は、第1受光素子42が受光する光強度をP1とし、第2受光素子54が受光する光強度をP2とすると、P2/P1と表すことができる。典型的には、これら光強度を第1受光素子42および第2受光素子54において電流に変換して検出用の抵抗に流し、発生する電圧として光強度を検出している。第1受光素子42の出力電流に対する検出抵抗をR1とし、第2受光素子54の出力電流に対する検出抵抗をR2とすると、下記式(4)の関係が得られる。なお、Im2×R2はV2、Im1×R1はV1と表すこともできる。
P2/P1=(Im2×R2)/(Im1×R1) (4)
2 下クラッド層
3 活性層
4 光導波層
6 上クラッド層
7 コンタクト層
8 電極
9 絶縁膜
10 ヒータ
11 電源電極
12 グランド電極
15 裏面電極
16,17 端面膜
18 回折格子
19 光増幅層
20 コンタクト層
21 電極
30 半導体レーザ
31 第1温度制御装置
32 第1サーミスタ
41 ビームスプリッタ
42 第1受光素子
50 検知部
51 ビームスプリッタ
52 エタロン
53 第2温度制御装置
55 第2サーミスタ
60 メモリ
70 コントローラ
80 筐体
81 温度検知部
100 波長可変レーザ
Claims (6)
- 第1波長で発振するための駆動条件を格納したメモリを有し、エタロンを有する波長検知部による波長の検知結果と目標値との差に基づいて発振波長を制御する波長可変レーザの制御方法であって、
前記第1波長に対応した前記駆動条件のうちエタロンの波長特性を定める第1目標値および第1制御値を取得する第1ステップと、
前記第1波長と第2波長との波長のシフト量および前記第1制御値に基づいて、前記第2波長に対応した、前記エタロンの波長特性を定める第2制御値を演算する第2ステップと、
前記波長可変レーザの波長が前記シフト量に相当する分だけシフトした際に前記波長検知部において得られる波長検知結果を第2目標値として算出するか、あるいは前記波長可変レーザの波長が前記シフト量に相当する分だけシフトした際の波長で前記波長可変レーザをレーザ発振させるための前記エタロンの波長特性の第3制御値を算出するかを選択して実行する第3ステップと、
前記第3ステップで前記第2目標値を算出することが選択された場合に、前記第2制御値に基づいて前記エタロンの波長特性を定めるとともに、前記第2目標値を前記波長検知部によって得られる波長検知結果の制御目標値に定めて前記波長可変レーザの波長を制御し、前記第3ステップで前記第3制御値を算出することが選択された場合に、前記第3制御値に基づいて前記エタロンの波長特性を定めるとともに、前記第1目標値を前記波長検知部によって得られる波長検知結果の制御目標値に定めて前記波長可変レーザの波長を制御する第4ステップと、を含み、
前記エタロンの波長特性の目標値は、前記エタロンへの入力値と前記エタロンからの出力値との比であり、
前記エタロンの波長特性の制御値は、前記エタロンの温度である、波長可変レーザの制御方法。 - 前記第3ステップの前に、前記第2制御値に基づいて前記エタロンの波長特性を定めるとともに、前記第1目標値を前記波長検知部によって得られた波長検知結果の制御目標値と定めて前記波長可変レーザの波長を制御する第5ステップを含む、請求項1記載の波長可変レーザの制御方法。
- 前記エタロンの温度は、ペルチェ素子を含む温度制御装置によって制御される、請求項1または2記載の波長可変レーザの制御方法。
- 前記第3ステップで入力されるシフト量の符号に応じて、前記第4ステップの選択を行う、請求項3記載の波長可変レーザの制御方法。
- 前記第4ステップにおいて、前記温度制御装置の消費電力が小さい方を選択する、請求項3記載の波長可変レーザの制御方法。
- 前記エタロンの温度と、前記エタロンの周囲温度との関係に応じて、前記第4ステップの選択を行う、請求項5記載の波長可変レーザの制御方法。
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JP6292499B2 (ja) * | 2013-08-30 | 2018-03-14 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザの制御方法 |
JP2015050284A (ja) * | 2013-08-30 | 2015-03-16 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザの制御方法 |
CN107024744A (zh) * | 2016-01-29 | 2017-08-08 | 青岛海信宽带多媒体技术有限公司 | 一种光模块及波长监控方法 |
JP7019283B2 (ja) | 2016-02-15 | 2022-02-15 | 古河電気工業株式会社 | 波長可変型レーザモジュールおよびその波長制御方法 |
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