JP6319721B2 - 波長可変レーザの制御方法 - Google Patents
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 140
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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Description
最初に本願発明の実施形態の内容を列記して説明する。
(2)前記第1波長から前記第2波長への波長差分の符号に応じて、前記第2ステップの選択を行ってもよい。
(3)前記エタロンの波長特性を定める制御値は、前記エタロンの温度であり、前記エタロンの温度は、ペルチェ素子を含む温度制御装置によって制御され、前記第2ステップにおいて、前記温度制御装置の消費電力が小さい方を選択してもよい。
(4)前記第2ステップの前記第2目標設定値および前記第2制御値の両方を算出する方法において、前記第2目標設定値は、前記温度制御装置の消費電力が小さくなる方にシフトさせてもよい。
(5)前記第2ステップの前記第2目標設定値および前記第2制御値の両方を算出する方法において、前記第2目標設定値の変更できる波長差分を超えた場合に前記第2制御値を算出してもよい。
(6) 前記エタロンの温度と、前記エタロンの周囲温度との関係に応じて、前記第2ステップの選択を行ってもよい。
本発明の実施形態に係る波長可変レーザの制御方法の具体例を、以下に図面を参照しつつ説明する。なお、本発明はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。
Tetln_A=Tetln_B+ΔF1/C1 (1)
第2温度制御装置53の温度を設定温度Tetln_Aに制御することによって、目標値Im2/Im1をそのまま利用して、グリッドレス制御の要求波長を得ることが可能となる。
Target_A=Target_B+ΔF2/B1 (3)
2 下クラッド層
3 活性層
4 光導波層
6 上クラッド層
7 コンタクト層
8 電極
9 絶縁膜
10 ヒータ
11 電源電極
12 グランド電極
15 裏面電極
16,17 端面膜
18 回折格子
19 光増幅層
20 コンタクト層
21 電極
30 半導体レーザ
31 第1温度制御装置
32 第1サーミスタ
41 ビームスプリッタ
42 第1受光素子
50 検知部
51 ビームスプリッタ
52 エタロン
53 第2温度制御装置
55 第2サーミスタ
60 メモリ
70 コントローラ
80 筐体
81 温度検知部
100 波長可変レーザ
Claims (5)
- 第1波長で発振するための駆動条件を格納したメモリを有し、エタロンを有する波長検知部による波長の検知結果と目標設定値との比較結果に基づいて発振波長を制御する波長可変レーザの制御方法であって、
前記第1波長から前記第1波長と異なる第2波長までの波長差分を示す情報と、前記第1波長に対応した前記目標設定値を第1目標設定値として取得するとともに、前記エタロンの波長特性を定める第1制御値を取得する第1ステップと、
前記波長差分と、前記第1目標設定値と、前記第1制御値とに基づいて、前記第2波長に対応した、前記波長検知部の出力と比較するための第2目標設定値を算出するか、あるいは前記第2波長に対応した前記エタロンの波長特性を定める第2制御値を算出するかを選択して実行する第2ステップと、
前記第2ステップの選択結果に基づき、前記エタロンの波長特性を前記第1制御値によって制御しつつ、前記波長検知部による波長の検知結果と前記第2目標設定値との比較結果に基づいて発振波長を制御するか、あるいは前記エタロンの波長特性を前記第2制御値によって制御しつつ、前記波長検知部による波長の検知結果と前記第1目標設定値との比較結果に基づいて発振波長を制御するか何れかの制御を実施する第3ステップと、を含む波長可変レーザの制御方法。 - 第1波長で発振するための駆動条件を格納したメモリを有し、エタロンを有する波長検知部による波長の検知結果と目標設定値との比較結果に基づいて発振波長を制御する波長可変レーザの制御方法であって、
前記第1波長から前記第1波長と異なる第2波長までの波長差分を示す情報と、前記第1波長に対応した前記目標設定値を第1目標設定値として取得するとともに、前記エタロンの波長特性を定める第1制御値を取得する第1ステップと、
前記波長差分と、前記第1目標設定値と、前記第1制御値とに基づいて、前記第2波長に対応した、前記波長検知部の出力と比較するための第2目標設定値を算出するとともに、前記第2目標設定値において、前記第2波長が実現されるための前記エタロンの波長特性を定める第2制御値を算出する第2ステップと、
前記エタロンの波長特性を前記第2制御値によって制御しつつ、前記波長検知部による波長の検知結果と前記第2目標設定値との比較結果に基づいて発振波長を制御する第3ステップと、を含む波長可変レーザの制御方法。 - 前記エタロンの波長特性を定める制御値は、前記エタロンの温度であり、
前記エタロンの温度は、ペルチェ素子を含む温度制御装置によって制御され、
前記第2ステップにおいて、前記温度制御装置の消費電力が小さい方を選択する、請求項1記載の波長可変レーザの制御方法。 - 前記第2制御値は、前記第1制御値よりも前記温度制御装置の消費電力が小さくなる値である、請求項3記載の波長可変レーザの制御方法。
- 前記第1制御値による前記エタロンの波長特性において、前記第2目標設定値の変更のみで前記第2波長が実現できる場合は、前記第2ステップでは前記第2制御値の算出は行わず、前記第2目標設定値の変更のみで前記第2波長が実現できない場合には、前記第2目標設定値の算出とともに、前記第2制御値の算出を実施する、請求項2記載の波長可変レーザの制御方法。
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US14/610,823 US20150222077A1 (en) | 2014-01-31 | 2015-01-30 | Method for controlling variable wavelength laser, and variable wavelength laser device |
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JP2015050284A (ja) * | 2013-08-30 | 2015-03-16 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザの制御方法 |
JP6328332B2 (ja) * | 2015-08-20 | 2018-05-23 | 三菱電機株式会社 | ビーム走査装置、光無線通信システムおよびビーム走査方法 |
CA3020254A1 (en) * | 2016-06-08 | 2017-12-14 | Mitsubishi Electric Corporation | Laser light source device |
JP6821901B2 (ja) | 2016-07-11 | 2021-01-27 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム |
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US5960259A (en) * | 1995-11-16 | 1999-09-28 | Matsushita Electric Industrial Co., Ltd. | Optical apparatus and method for producing the same |
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