JP6279504B2 - ハニカム構造体の製造方法 - Google Patents
ハニカム構造体の製造方法 Download PDFInfo
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- JP6279504B2 JP6279504B2 JP2015063428A JP2015063428A JP6279504B2 JP 6279504 B2 JP6279504 B2 JP 6279504B2 JP 2015063428 A JP2015063428 A JP 2015063428A JP 2015063428 A JP2015063428 A JP 2015063428A JP 6279504 B2 JP6279504 B2 JP 6279504B2
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- thermal expansion
- honeycomb structure
- honeycomb
- expansion coefficient
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- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000010304 firing Methods 0.000 claims description 48
- 229910052878 cordierite Inorganic materials 0.000 claims description 45
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 24
- 238000005192 partition Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000012778 molding material Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 241000264877 Hippospongia communis Species 0.000 description 129
- 239000003054 catalyst Substances 0.000 description 44
- 230000000052 comparative effect Effects 0.000 description 22
- 239000007789 gas Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 229910052720 vanadium Inorganic materials 0.000 description 11
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 11
- 239000011148 porous material Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 239000005995 Aluminium silicate Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 235000012211 aluminium silicate Nutrition 0.000 description 4
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 4
- 238000010531 catalytic reduction reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000454 talc Substances 0.000 description 3
- 229910052623 talc Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical group O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011949 solid catalyst Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
本発明のハニカム構造体において規定されたコージェライト成分の比率となるように、タルク、カオリン(カオリン・仮焼カオリン)、アルミナ(酸化アルミニウム・水酸化アルミニウム)、及びシリカのうちから複数を組み合わせて配合し、水と成形助剤を加えて混練した成形材料を、押出成形用口金を通じて押出成形し(成形工程)、得られたハニカム成形体を乾燥・仕上げ後、最高温度が1250℃から1370℃の間の焼成温度でそれぞれ焼成を行うことにより、ハニカム構造体を得た(実施例1〜4)。原料の配合率は表1に示すように、実施例1,2(材料1)、実施例3(材料3)、及び実施例4(材料4)でそれぞれ異なっている。更に、実施例1,2とそれぞれ同じ配合比率で押出成形されたハニカム成形体に対し、焼成温度を異にして焼成を行い、ハニカム構造体を得た(比較例1,2)。また、本発明のハニカム構造体において規定されたコージェライト成分の比率から外れた配合比率で調製された成形材料(材料25,6)を用いて押出成形されたハニカム成形体からハニカム構造体を得た(比較例3〜10)。なお、実施例1,2及び比較例1,2において、成形材料には、酸化アルミニウム、水酸化アルミニウム、及び酸化珪素が含まれていない。各材料の原料配合率、及びコージェライト成分の比率をまとめたものを下記表1に示す。
気孔率[%]とは、ハニカム構造体の隔壁を構成する多孔体の気孔率を示す。ここで、隔壁の気孔率[%]が10%未満の場合、担持できる触媒量が制限され、一方、70%超の場合、ハニカム構造体の隔壁が脆くなり欠落し易くなる。本実施例においては、気孔率[%]がおおむね10%以上、40%以下の範囲となるように調製を行った。ハニカム構造体の隔壁の気孔率[%]は、JIS R1655に準拠し水銀圧入法により測定を行った。
気孔径[μm]とは、ハニカム構造体の隔壁を構成する多孔体の中央細孔径(メジアン径)を示す。気孔径が小さすぎると、気孔内に触媒を担持することが難しくなる。一方、気孔径が大きすぎると、ハニカム構造体の隔壁が脆くなり欠落し易くなる。ハニカム構造体の気孔径[μm]は、JIS R1655に準拠し水銀圧入法により測定を行った。
ハニカム構造体の中心軸方向の圧縮強度[MPa]は、社団法人自動車技術会発行の自動車規格であるJASO規格M505−87に規定されている“A軸圧縮強度”のことであり、一般に5MPa以上であることが好ましく、10MPa以上であることが更に好ましく、15MPa以上であることが特に好ましい。中心軸方向Aの圧縮強度[MPa]が上記数値を超えることにより、ハニカム構造体の耐強度性を向上させることができる。ここで、中心軸方向Aの圧縮強度(A軸圧縮強度)は、上記規格に基づき、ハニカム構造体から直径25.4mm(1インチ)、高さ25.4mm(1インチ)の円柱状の試料を切り出し、当該試料の流路方向に圧縮荷重を徐々に加える。圧縮荷重を増大させ、試料が破壊されたときの圧力の値を中心軸方向Aの圧縮強度[MPa]とする。
熱膨張係数[ppm/K]は、示差検出型の熱膨張計を用い、ハニカム構造体の隔壁を構成する多孔体の40℃から800℃、及び200℃から600℃のそれぞれの温度範囲における平均熱膨張係数を測定することにより求めた。更に具体的に説明すると、始めにハニカム構造体のハニカム構造部から、縦5mm×横5mm×長さ50mmの測定試料を作製する。この測定試料の長さ方向が、中心軸方向Aのハニカム構造部のセルの延びる方向となり、長さ方向に直交する方向が断面方向Bとなる。
上記(5)によって測定された中心軸方向Aにおける40℃から800℃の熱膨張係数XA、200℃から600℃の熱膨張係数YA、断面方向Bにおける40℃から800℃の熱膨張係数XB、及び200℃から600℃の熱膨張係数YBに基づいて、40℃から800℃の熱膨張係数XA,XBに対する200℃から600℃の熱膨張係数YA,YBの比率を算出した。ここで、比率の算出は、下記式(A)及び(B)に基づく。
(A)中心軸方向の比率[%]
=(熱膨張係数YA−熱膨張係数XA)/熱膨張係数XA×100
(B)断面方向の比率[%]
=(熱膨張係数YB−熱膨張係数XB)/熱膨張係数XB×100
Claims (4)
- 成形材料から、流体の流路となる一方の端面から他方の端面まで延びる複数のセルを区画形成する隔壁を有するハニカム成形体を形成する成形工程と、前記ハニカム成形体を焼成する焼成工程とを有し、前記隔壁がコージェライト成分を含むハニカム構造体の製造方法であって、
前記ハニカム構造体の中心軸方向の熱膨張係数が40℃から800℃の温度変化において、2.1ppm/K以上、3.5ppm/K以下であり、
前記中心軸方向に直交する断面方向の熱膨張係数が40℃から800℃の温度変化において、1.0ppm/K以上、2.5ppm/K以下であり、
前記中心軸方向に直交する断面方向の熱膨張係数が前記中心軸方向の熱膨張係数より低く、
かつ、前記ハニカム構造体の構成元素として珪素、アルミニウム、及びマグネシウムの三成分を含み、
前記三成分の酸化物合計比率を100%とした場合、
酸化珪素が57%以上、62%以下、
酸化アルミニウムが18%以上、35%以下、
酸化マグネシウムが5%以上、20%以下であり、
前記焼成工程における最高温度が1250℃以上、1275℃以下であるハニカム構造体の製造方法。 - 前記中心軸方向及び前記断面方向の熱膨張曲線が、40℃から800℃の温度範囲の平均熱膨張係数をXppm/K、200℃から600℃の温度範囲の平均熱膨張係数をYppm/Kとしたとき、Yが0.5Xから1.5Xの範囲にある請求項1に記載のハニカム構造体の製造方法。
- 成形材料に酸化アルミニウム、水酸化アルミニウム、酸化珪素を含まない請求項1または2に記載のハニカム構造体の製造方法。
- 前記ハニカム構造体の前記中心軸方向の圧縮強度が15MPa以上である請求項1〜3のいずれか一項に記載のハニカム構造体の製造方法。
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