JP6277004B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法 Download PDF

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Publication number
JP6277004B2
JP6277004B2 JP2014016335A JP2014016335A JP6277004B2 JP 6277004 B2 JP6277004 B2 JP 6277004B2 JP 2014016335 A JP2014016335 A JP 2014016335A JP 2014016335 A JP2014016335 A JP 2014016335A JP 6277004 B2 JP6277004 B2 JP 6277004B2
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Japan
Prior art keywords
gas
film
ratio
dry etching
etching method
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JP2014016335A
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English (en)
Japanese (ja)
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JP2015144158A5 (https=
JP2015144158A (ja
Inventor
聡志 寺倉
聡志 寺倉
森　政士
政士 森
荒瀬　高男
高男 荒瀬
竜太 町田
竜太 町田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2014016335A priority Critical patent/JP6277004B2/ja
Priority to TW103121224A priority patent/TWI555080B/zh
Priority to KR1020140094956A priority patent/KR101679371B1/ko
Priority to US14/448,709 priority patent/US9905431B2/en
Publication of JP2015144158A publication Critical patent/JP2015144158A/ja
Publication of JP2015144158A5 publication Critical patent/JP2015144158A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2014016335A 2014-01-31 2014-01-31 ドライエッチング方法 Active JP6277004B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014016335A JP6277004B2 (ja) 2014-01-31 2014-01-31 ドライエッチング方法
TW103121224A TWI555080B (zh) 2014-01-31 2014-06-19 Dry etching method
KR1020140094956A KR101679371B1 (ko) 2014-01-31 2014-07-25 드라이 에칭 방법
US14/448,709 US9905431B2 (en) 2014-01-31 2014-07-31 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014016335A JP6277004B2 (ja) 2014-01-31 2014-01-31 ドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2015144158A JP2015144158A (ja) 2015-08-06
JP2015144158A5 JP2015144158A5 (https=) 2016-12-15
JP6277004B2 true JP6277004B2 (ja) 2018-02-07

Family

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Family Applications (1)

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JP2014016335A Active JP6277004B2 (ja) 2014-01-31 2014-01-31 ドライエッチング方法

Country Status (4)

Country Link
US (1) US9905431B2 (https=)
JP (1) JP6277004B2 (https=)
KR (1) KR101679371B1 (https=)
TW (1) TWI555080B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6604833B2 (ja) 2015-12-03 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法
JP6498152B2 (ja) * 2015-12-18 2019-04-10 東京エレクトロン株式会社 エッチング方法
US9997374B2 (en) 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6458156B2 (ja) 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6763750B2 (ja) * 2016-11-07 2020-09-30 東京エレクトロン株式会社 被処理体を処理する方法
KR20190009020A (ko) 2017-07-17 2019-01-28 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
US11532484B2 (en) 2018-10-26 2022-12-20 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263415A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 半導体装置の製造方法
JP2001358118A (ja) * 2000-06-15 2001-12-26 Seiko Epson Corp プラズマエッチング方法
KR100905999B1 (ko) * 2007-06-12 2009-07-06 주식회사 하이닉스반도체 반도체 소자의 제조방법
TWI368275B (en) * 2007-10-02 2012-07-11 Nanya Technology Corp Dry etching process
US8323521B2 (en) * 2009-08-12 2012-12-04 Tokyo Electron Limited Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques
US8158967B2 (en) 2009-11-23 2012-04-17 Micron Technology, Inc. Integrated memory arrays
JP2011176292A (ja) * 2010-02-01 2011-09-08 Central Glass Co Ltd ドライエッチング剤
EP2511948A4 (en) 2010-02-01 2014-07-02 Central Glass Co Ltd DRYING AGENT AND DRYING PROCESS WITH THIS
TWI450308B (zh) 2011-07-27 2014-08-21 日立全球先端科技股份有限公司 Plasma processing method
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
TWI555080B (zh) 2016-10-21
JP2015144158A (ja) 2015-08-06
KR20150091208A (ko) 2015-08-10
US9905431B2 (en) 2018-02-27
TW201530648A (zh) 2015-08-01
KR101679371B1 (ko) 2016-11-24
US20150221518A1 (en) 2015-08-06

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