TWI555080B - Dry etching method - Google Patents

Dry etching method Download PDF

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Publication number
TWI555080B
TWI555080B TW103121224A TW103121224A TWI555080B TW I555080 B TWI555080 B TW I555080B TW 103121224 A TW103121224 A TW 103121224A TW 103121224 A TW103121224 A TW 103121224A TW I555080 B TWI555080 B TW I555080B
Authority
TW
Taiwan
Prior art keywords
gas
film
ratio
mask
dry etching
Prior art date
Application number
TW103121224A
Other languages
English (en)
Chinese (zh)
Other versions
TW201530648A (zh
Inventor
寺倉聡志
森政士
荒瀬高男
町田竜太
Original Assignee
日立全球先端科技股份有限公司
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Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201530648A publication Critical patent/TW201530648A/zh
Application granted granted Critical
Publication of TWI555080B publication Critical patent/TWI555080B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW103121224A 2014-01-31 2014-06-19 Dry etching method TWI555080B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014016335A JP6277004B2 (ja) 2014-01-31 2014-01-31 ドライエッチング方法

Publications (2)

Publication Number Publication Date
TW201530648A TW201530648A (zh) 2015-08-01
TWI555080B true TWI555080B (zh) 2016-10-21

Family

ID=53755443

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103121224A TWI555080B (zh) 2014-01-31 2014-06-19 Dry etching method

Country Status (4)

Country Link
US (1) US9905431B2 (https=)
JP (1) JP6277004B2 (https=)
KR (1) KR101679371B1 (https=)
TW (1) TWI555080B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6604833B2 (ja) 2015-12-03 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法
JP6498152B2 (ja) * 2015-12-18 2019-04-10 東京エレクトロン株式会社 エッチング方法
US9997374B2 (en) 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6458156B2 (ja) 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6763750B2 (ja) * 2016-11-07 2020-09-30 東京エレクトロン株式会社 被処理体を処理する方法
KR20190009020A (ko) 2017-07-17 2019-01-28 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
US11532484B2 (en) 2018-10-26 2022-12-20 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830807A (en) * 1994-03-18 1998-11-03 Fujitsu Limited Successive dry etching of alternating laminate
TW200917357A (en) * 2007-10-02 2009-04-16 Nanya Technology Corp Dry etching process
US20120298911A1 (en) * 2010-02-01 2012-11-29 Central Glass Company, Limited Dry Etching Agent and Dry Etching Method Using the Same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358118A (ja) * 2000-06-15 2001-12-26 Seiko Epson Corp プラズマエッチング方法
KR100905999B1 (ko) * 2007-06-12 2009-07-06 주식회사 하이닉스반도체 반도체 소자의 제조방법
US8323521B2 (en) * 2009-08-12 2012-12-04 Tokyo Electron Limited Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques
US8158967B2 (en) 2009-11-23 2012-04-17 Micron Technology, Inc. Integrated memory arrays
JP2011176292A (ja) * 2010-02-01 2011-09-08 Central Glass Co Ltd ドライエッチング剤
TWI450308B (zh) 2011-07-27 2014-08-21 日立全球先端科技股份有限公司 Plasma processing method
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830807A (en) * 1994-03-18 1998-11-03 Fujitsu Limited Successive dry etching of alternating laminate
TW200917357A (en) * 2007-10-02 2009-04-16 Nanya Technology Corp Dry etching process
US20120298911A1 (en) * 2010-02-01 2012-11-29 Central Glass Company, Limited Dry Etching Agent and Dry Etching Method Using the Same

Also Published As

Publication number Publication date
JP2015144158A (ja) 2015-08-06
KR20150091208A (ko) 2015-08-10
US9905431B2 (en) 2018-02-27
TW201530648A (zh) 2015-08-01
JP6277004B2 (ja) 2018-02-07
KR101679371B1 (ko) 2016-11-24
US20150221518A1 (en) 2015-08-06

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