JP6268091B2 - 流量コントローラのインシトゥ較正の方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 141
- 238000011065 in-situ storage Methods 0.000 title claims description 11
- 230000008569 process Effects 0.000 claims description 69
- 238000012545 processing Methods 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 33
- 238000012937 correction Methods 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 230000001276 controlling effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 108
- 238000012544 monitoring process Methods 0.000 description 39
- 230000001186 cumulative effect Effects 0.000 description 17
- 230000036541 health Effects 0.000 description 12
- 238000012423 maintenance Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 230000006399 behavior Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002405 diagnostic procedure Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000006903 response to temperature Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
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- G05D7/00—Control of flow
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- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86485—Line condition change responsive release of valve
Description
Claims (13)
- プロセスチャンバに結合された流量コントローラのインシトゥ較正の方法であって、
第1のガスと異なる標準ガスを使用することによって決定された、計算された第1の関係に基づいて設定点の第1の値に設定されるときに、流量の第1の値で前記第1のガスを供給するように構成された流量コントローラを供給することと、
前記第1のガスに対する前記流量と前記設定点との間の実際の第1の関係を、前記流量コントローラの前記設定点の対応する複数の値で決定された前記第1のガスの前記流量の複数の値から決定することであり、前記流量の前記複数の値の各々が、前記設定点に対する前記複数の値の対応する値で前記第1のガスを前記流量コントローラを通して流すことから決定される、実際の第1の関係を決定することと、
前記実際の第1の関係に基づいて前記流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことと、を含み、
前記第1のガスの前記流量に対する前記複数の値が、前記流量コントローラと前記プロセスチャンバの間に配置された較正デバイスにより決定される、方法。 - 前記第1のガスの前記流量に対する前記複数の値を、前記較正デバイスを使用して決定することが、
前記設定点の前記複数の値の対応する値ごとに前記第1のガスに対する圧力上昇率を測定することと、
前記設定点の前記複数の値の対応する値ごとに前記圧力上昇率から前記第1のガスに対する前記流量の前記複数の値の各値を決定することと、をさらに含む、請求項1に記載の方法。 - 前記計算された第1の関係を決定することが、
前記標準ガスに対する流量と設定点との間の実際の第2の関係を、前記標準ガスの前記流量に対する複数の値および前記流量コントローラの前記設定点の対応する複数の値から決定することと、
前記第1のガスで使用するためにガス補正係数を適用して前記実際の第2の関係を調節し、前記計算された第1の関係を形成することと、をさらに含む、請求項1に記載の方法。 - 前記実際の第1の関係に基づいて前記流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことが、
前記実際の第1の関係に基づいて、前記第1のガスに対する前記流量の前記第1の値を生成する前記設定点の前記第1の値と異なる前記設定点の第2の値を決定することと、
入力値として前記設定点の前記第2の値を前記計算された第1の関係に適用して、前記流量コントローラから前記第1のガスに対する前記流量の前記第1の値に等しい出力値を供給することと、をさらに含む、請求項3に記載の方法。 - 前記実際の第1の関係に基づいて前記流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことが、
前記計算された第1の関係を前記流量コントローラの前記実際の第1の関係と取り替えることと、
前記実際の第1の関係に基づいて前記流量コントローラを前記設定点の前記第1の値に設定して、前記流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことと、をさらに含む、請求項3に記載の方法。 - 流量コントローラをインシトゥ較正し、基板を処理するための装置であって、
処理容積部を有するプロセスチャンバと、
前記処理容積部に第1のガスを供給するために前記プロセスチャンバに結合された第1の流量コントローラであり、前記第1のガスと異なる標準ガスを使用することによって決定された、計算された第1の関係に基づいて設定点の第1の値に設定されるときに、流量の第1の値で前記第1のガスを供給するように構成される、第1の流量コントローラと、
前記第1の流量コントローラと前記プロセスチャンバの間に配置された較正デバイスと、
前記プロセスチャンバに結合されたコントローラであり、前記コントローラによって実行されるときガスを前記処理容積部に流す第1の方法が行われるようにする命令を記憶しているコンピュータ可読媒体を含むコントローラと、を備え、前記第1の方法が、
前記第1のガスに対する前記流量と前記設定点との間の実際の第1の関係を、前記第1の流量コントローラの前記設定点の対応する複数の値で決定された前記第1のガスの前記流量の複数の値から決定することであり、前記流量の前記複数の値の各々が、前記設定点に対する前記複数の値の対応する値で前記第1のガスを前記第1の流量コントローラを通して流すことから決定される、実際の第1の関係を決定することと、
前記実際の第1の関係に基づいて前記第1の流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことと、を含み、
前記較正デバイスが、前記第1のガスの前記流量に対する前記複数の値を決定する、装置。 - 前記第1の流量コントローラは、コンピュータ可読媒体を有する第1の位置コントローラを含み、前記コンピュータ可読媒体は、前記第1の位置コントローラによって実行されると前記第1の位置コントローラにガスを前記処理容積部に流す第2の方法を行わせる命令を記憶しており、前記第2の方法が、
前記計算された第1の関係を前記設定点の入力値に適用して、前記流量の対応する出力値で前記第1のガスを前記処理容積部に流すことであり、前記設定点が、前記第1の流量コントローラの調節バルブの位置を制御する、前記第1のガスを前記処理容積部に流すこと、を含む、請求項6に記載の装置。 - 前記コントローラが、前記第1の方法の前記実際の第1の関係に基づいて前記流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことに関連する追加の命令を含み、前記追加の命令が、
前記計算された第1の関係を前記第1の流量コントローラの前記実際の第1の関係と取り替えることと、
前記実際の第1の関係に基づいて前記第1の流量コントローラを前記設定点の前記第1の値に設定して、前記第1の流量コントローラから前記流量の前記第1の値で前記第1のガスを流すことと、をさらに含む、請求項6に記載の装置。 - 前記処理容積部に第2のガスを供給するために前記プロセスチャンバに結合された第2の流量コントローラであり、前記第2のガスと異なる標準ガスを使用することによって決定された、計算された第2の関係に基づいて設定点の第2の値に設定されるときに、流量の第2の値で前記第2のガスを供給するように構成される第2の流量コントローラをさらに備える、請求項6に記載の装置。
- 前記コントローラの前記コンピュータ可読媒体に記憶された、ガスを前記処理容積部に流す前記第1の方法が、
前記第2のガスに対する前記流量と前記設定点との間の実際の第2の関係を、前記第2の流量コントローラの前記設定点の対応する複数の値で決定された前記第2のガスの前記流量の複数の値から決定することであり、前記流量の前記複数の値の各々が、前記設定点に対する前記複数の値の対応する値で前記第2のガスを前記第2の流量コントローラを通して流すことから決定される、実際の第2の関係を決定することと、
前記実際の第2の関係に基づいて前記第2の流量コントローラから前記流量の前記第2の値で前記第2のガスを流すことと、をさらに含む、請求項9に記載の装置。 - 前記第2の流量コントローラは、コンピュータ可読媒体を有する第2の位置コントローラを含み、前記コンピュータ可読媒体は、第2の位置コントローラによって実行されると前記第2の位置コントローラにガスを前記処理容積部に流す第2の方法を行わせる命令を記憶しており、前記第2の方法が、
前記計算された第2の関係を前記設定点の入力値に適用して、前記流量の対応する出力値で前記第2のガスを前記処理容積部に流すこと、を含む、請求項10に記載の装置。 - 前記コントローラが、前記計算された第2の関係を決定することに関連する追加の命令を含み、前記追加の命令が、
前記標準ガスに対する流量と設定点との間の実際の標準の関係を、前記標準ガスの前記流量に対する複数の値および前記流量コントローラの前記設定点の対応する複数の値から決定することと、
前記第2のガスで使用するために第2のガス補正係数を適用して前記実際の標準の関係を調節し、前記計算された第2の関係を形成することと、をさらに含む、請求項10に記載の装置。 - 前記第1の方法の前記実際の第2の関係に基づいて前記第2の流量コントローラから前記流量の前記第2の値で前記第2のガスを流すことが、
前記計算された第2の関係を前記第2の流量コントローラの前記実際の第2の関係と取り替えることと、
前記実際の第2の関係に基づいて前記第2の流量コントローラを前記設定点の前記第2の値に設定して、前記第2の流量コントローラから前記流量の前記第2の値で前記第2のガスを流すことと、をさらに含む、請求項12に記載の装置。
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US201161540817P | 2011-09-29 | 2011-09-29 | |
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US13/627,547 US9644796B2 (en) | 2011-09-29 | 2012-09-26 | Methods for in-situ calibration of a flow controller |
US13/627,547 | 2012-09-26 | ||
PCT/US2012/057829 WO2013049511A2 (en) | 2011-09-29 | 2012-09-28 | Methods for in-situ calibration of a flow controller |
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