JP6261207B2 - 露光装置、露光方法、それらを用いたデバイスの製造方法 - Google Patents

露光装置、露光方法、それらを用いたデバイスの製造方法 Download PDF

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JP6261207B2
JP6261207B2 JP2013138760A JP2013138760A JP6261207B2 JP 6261207 B2 JP6261207 B2 JP 6261207B2 JP 2013138760 A JP2013138760 A JP 2013138760A JP 2013138760 A JP2013138760 A JP 2013138760A JP 6261207 B2 JP6261207 B2 JP 6261207B2
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pattern
image
region
area
exposure
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JP2015012258A5 (enExample
JP2015012258A (ja
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賢 土井
賢 土井
慎哉 小此木
慎哉 小此木
規行 八木
規行 八木
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Canon Inc
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Canon Inc
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013138760A 2013-07-02 2013-07-02 露光装置、露光方法、それらを用いたデバイスの製造方法 Expired - Fee Related JP6261207B2 (ja)

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JP2015012258A JP2015012258A (ja) 2015-01-19
JP2015012258A5 JP2015012258A5 (enExample) 2016-08-18
JP6261207B2 true JP6261207B2 (ja) 2018-01-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110471259A (zh) * 2019-06-19 2019-11-19 上海华力微电子有限公司 芯片拼接方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6501680B2 (ja) * 2015-08-31 2019-04-17 キヤノン株式会社 露光方法、露光装置及び物品の製造方法
CN109073986B (zh) * 2016-07-19 2020-10-30 应用材料公司 分段对准建模方法
JP2019079029A (ja) * 2017-10-24 2019-05-23 キヤノン株式会社 露光装置および物品の製造方法
JP2019079030A (ja) * 2017-10-24 2019-05-23 キヤノン株式会社 露光装置および物品の製造方法
CN110109325A (zh) * 2018-02-01 2019-08-09 李冰 一种拼接光波导结构及其制备方法
JP7520785B2 (ja) * 2021-09-08 2024-07-23 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法
CN114326336B (zh) * 2021-11-19 2024-03-22 无锡中微晶园电子有限公司 一种大尺寸芯片曝光方法
JP2023106908A (ja) * 2022-01-21 2023-08-02 キヤノン株式会社 露光方法、露光装置、及び物品の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09306819A (ja) * 1996-05-17 1997-11-28 Nikon Corp 露光装置
JP2000340482A (ja) * 1999-05-26 2000-12-08 Sony Corp 露光方法及びこの方法を用いた露光装置
JP2001297975A (ja) * 2000-04-17 2001-10-26 Nikon Corp 露光装置及び露光方法
JP4362999B2 (ja) * 2001-11-12 2009-11-11 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP5792431B2 (ja) * 2010-04-28 2015-10-14 日本電気株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110471259A (zh) * 2019-06-19 2019-11-19 上海华力微电子有限公司 芯片拼接方法

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