JP6249892B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP6249892B2
JP6249892B2 JP2014132430A JP2014132430A JP6249892B2 JP 6249892 B2 JP6249892 B2 JP 6249892B2 JP 2014132430 A JP2014132430 A JP 2014132430A JP 2014132430 A JP2014132430 A JP 2014132430A JP 6249892 B2 JP6249892 B2 JP 6249892B2
Authority
JP
Japan
Prior art keywords
cylindrical electrode
substrate
cavity
mold
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014132430A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016012604A5 (enExample
JP2016012604A (ja
Inventor
吉松　直樹
直樹 吉松
清宏 内田
清宏 内田
武敏 鹿野
武敏 鹿野
雅芳 新飼
雅芳 新飼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2014132430A priority Critical patent/JP6249892B2/ja
Priority to US14/665,577 priority patent/US9437460B2/en
Priority to DE102015210603.9A priority patent/DE102015210603B4/de
Priority to CN201510363009.3A priority patent/CN105225971B/zh
Publication of JP2016012604A publication Critical patent/JP2016012604A/ja
Publication of JP2016012604A5 publication Critical patent/JP2016012604A5/ja
Application granted granted Critical
Publication of JP6249892B2 publication Critical patent/JP6249892B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2014132430A 2014-06-27 2014-06-27 半導体装置の製造方法 Active JP6249892B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014132430A JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法
US14/665,577 US9437460B2 (en) 2014-06-27 2015-03-23 Method for manufacturing semiconductor device
DE102015210603.9A DE102015210603B4 (de) 2014-06-27 2015-06-10 Verfahren zur Herstellung einer Halbleitervorrichtung
CN201510363009.3A CN105225971B (zh) 2014-06-27 2015-06-26 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014132430A JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2016012604A JP2016012604A (ja) 2016-01-21
JP2016012604A5 JP2016012604A5 (enExample) 2016-06-23
JP6249892B2 true JP6249892B2 (ja) 2017-12-20

Family

ID=54839996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014132430A Active JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US9437460B2 (enExample)
JP (1) JP6249892B2 (enExample)
CN (1) CN105225971B (enExample)
DE (1) DE102015210603B4 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017000083T5 (de) * 2016-03-18 2018-04-26 Fuji Electric Co., Ltd. Halbleitervorrichtung, metallelektrodenelement und verfahren zum herstellen der halbleitervorrichtung
US10347549B2 (en) * 2016-04-30 2019-07-09 Littelfuse, Inc. Power semiconductor device module having mechanical corner press-fit anchors
US10062621B2 (en) * 2016-04-30 2018-08-28 Ixys, Llc Power semiconductor device module having mechanical corner press-fit anchors
CN109417068B (zh) * 2017-01-17 2022-05-06 富士电机株式会社 半导体装置
CN110753997A (zh) * 2017-06-21 2020-02-04 三菱电机株式会社 半导体装置、电力转换装置及半导体装置的制造方法
CN107946273A (zh) * 2017-12-22 2018-04-20 江苏宏微科技股份有限公司 一种插接功率模块封装装置
JP7107120B2 (ja) * 2018-09-14 2022-07-27 富士電機株式会社 半導体装置、半導体装置の製造方法
JP7279354B2 (ja) * 2018-12-17 2023-05-23 富士電機株式会社 半導体素子及び半導体素子の識別方法
JP7293936B2 (ja) 2019-07-19 2023-06-20 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7404834B2 (ja) * 2019-12-06 2023-12-26 富士電機株式会社 半導体装置及び半導体装置の製造方法
CN111769090A (zh) * 2020-07-21 2020-10-13 无锡利普思半导体有限公司 塑封功率模块、塑封模具及塑封方法
JP7666045B2 (ja) * 2021-03-19 2025-04-22 富士電機株式会社 半導体装置
JP7692720B2 (ja) * 2021-04-06 2025-06-16 三菱重工業株式会社 パワーモジュール、及びパワーモジュールの製造方法
JP7484800B2 (ja) * 2021-04-08 2024-05-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
US12494418B2 (en) * 2021-07-26 2025-12-09 Infineon Technologies Ag Power module with press-fit contacts
US11901273B2 (en) * 2021-07-26 2024-02-13 Infineon Technologies Ag Power module with press-fit contacts
DE102021121797A1 (de) * 2021-08-23 2023-02-23 Infineon Technologies Ag Leistungshalbleitermodul mit buchse oder einpresspin und verfahren zu seiner herstellung
US12438068B2 (en) 2022-01-18 2025-10-07 Infineon Technologies Austria Ag Stacked module arrangement
US12660722B2 (en) 2022-11-17 2026-06-16 Semiconductor Components Industries, Llc Power module package with molded via and dual side press-fit pin
WO2024110052A1 (en) * 2022-11-25 2024-05-30 Huawei Digital Power Technologies Co., Ltd. Molded power module
DE102024202665A1 (de) * 2024-03-20 2025-09-25 Volkswagen Aktiengesellschaft Verfahren zur Herstellung einer leistungselektronischen Einrichtung, leistungselektronische Einrichtung und Kraftfahrzeug
DE102025112577B3 (de) 2025-03-31 2026-06-25 Volkswagen Aktiengesellschaft Leistungselektronisches Bauteil

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118027A (en) * 1991-04-24 1992-06-02 International Business Machines Corporation Method of aligning and mounting solder balls to a substrate
JP4626098B2 (ja) * 2001-06-15 2011-02-02 イビデン株式会社 プリント配線板の製造方法
JP5358077B2 (ja) * 2007-09-28 2013-12-04 スパンション エルエルシー 半導体装置及びその製造方法
DE102008005547B4 (de) * 2008-01-23 2013-08-29 Infineon Technologies Ag Leistungshalbleitermodul und Schaltungsanordnung mit einem Leistungshalbleitermodul
DE102008029829B4 (de) * 2008-06-25 2012-10-11 Danfoss Silicon Power Gmbh Vertikal nach oben kontaktierender Halbleiter und Verfahren zu dessen Herstellung
JP5101467B2 (ja) * 2008-11-26 2012-12-19 三菱電機株式会社 電力用半導体モジュール
JP5012772B2 (ja) 2008-11-28 2012-08-29 三菱電機株式会社 半導体装置の製造方法および半導体装置
JP5245880B2 (ja) * 2009-02-04 2013-07-24 三菱電機株式会社 電力用半導体モジュールとその製造方法
JP5262793B2 (ja) 2009-02-13 2013-08-14 三菱電機株式会社 電力用半導体装置とその製造方法
JP5268786B2 (ja) * 2009-06-04 2013-08-21 三菱電機株式会社 半導体モジュール
JP2011187819A (ja) 2010-03-10 2011-09-22 Mitsubishi Electric Corp 樹脂封止型パワーモジュールおよびその製造方法
US20120261689A1 (en) * 2011-04-13 2012-10-18 Bernd Karl Appelt Semiconductor device packages and related methods
CN103824821B (zh) * 2014-03-11 2016-04-06 湖南进芯电子科技有限公司 一种塑料密闭封装的开关电源模块及其制备方法

Also Published As

Publication number Publication date
US9437460B2 (en) 2016-09-06
CN105225971B (zh) 2018-12-04
DE102015210603B4 (de) 2019-05-23
JP2016012604A (ja) 2016-01-21
DE102015210603A1 (de) 2015-12-31
CN105225971A (zh) 2016-01-06
US20150380274A1 (en) 2015-12-31

Similar Documents

Publication Publication Date Title
JP2016012604A (ja) 半導体装置の製造方法
JP6619356B2 (ja) 電力用半導体装置およびその製造方法
CN107086183B (zh) 半导体模块的制造方法及半导体模块
TWI404177B (zh) 功率半導體電路裝置及其製造方法
JP5339800B2 (ja) 半導体装置の製造方法
JP2018170348A (ja) 半導体装置とその製造方法
JP2009200416A (ja) 半導体装置および半導体装置の製造方法
US20170141022A1 (en) Semiconductor device and method of manufacturing semiconductor device
JP4894783B2 (ja) 半導体装置および半導体装置の製造方法
JP2011187819A (ja) 樹脂封止型パワーモジュールおよびその製造方法
JP4334335B2 (ja) 混成集積回路装置の製造方法
CN108538728B (zh) 制造半导体器件的方法
JP2005191147A (ja) 混成集積回路装置の製造方法
CN101937850B (zh) 封装制造方法和半导体装置
JP4784945B2 (ja) 半導体装置の製造方法
JP6237919B2 (ja) リードフレーム、半導体装置の製造方法
JP2012174747A (ja) パワー半導体モジュールの構造およびその製造方法
JP2007311518A (ja) 半導体装置の製造方法及び半導体装置
JP4887346B2 (ja) 半導体装置
CN104517925B (zh) 半导体器件引线框架
JP2012174748A (ja) 半導体モジュールの構造およびその製造方法
JP4293232B2 (ja) 半導体装置の製造方法
KR102617704B1 (ko) 파워 모듈 및 그의 패키징 방법
CN117316887A (zh) 一种Mosfet芯片的封装结构及制作方法
JP5254374B2 (ja) 電子部品およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160428

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160428

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170323

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170411

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170609

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171024

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171121

R150 Certificate of patent or registration of utility model

Ref document number: 6249892

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250