JP6249892B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6249892B2
JP6249892B2 JP2014132430A JP2014132430A JP6249892B2 JP 6249892 B2 JP6249892 B2 JP 6249892B2 JP 2014132430 A JP2014132430 A JP 2014132430A JP 2014132430 A JP2014132430 A JP 2014132430A JP 6249892 B2 JP6249892 B2 JP 6249892B2
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cylindrical electrode
substrate
cavity
mold
semiconductor device
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Japanese (ja)
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JP2016012604A (ja
JP2016012604A5 (enExample
Inventor
吉松 直樹
直樹 吉松
清宏 内田
清宏 内田
武敏 鹿野
武敏 鹿野
雅芳 新飼
雅芳 新飼
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014132430A priority Critical patent/JP6249892B2/ja
Priority to US14/665,577 priority patent/US9437460B2/en
Priority to DE102015210603.9A priority patent/DE102015210603B4/de
Priority to CN201510363009.3A priority patent/CN105225971B/zh
Publication of JP2016012604A publication Critical patent/JP2016012604A/ja
Publication of JP2016012604A5 publication Critical patent/JP2016012604A5/ja
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    • H10W70/093
    • H10W70/658
    • H10W74/01
    • H10W74/114
    • H10W90/701
    • H10W95/00
    • H10W40/255
    • H10W70/479
    • H10W72/073
    • H10W72/07336
    • H10W72/075
    • H10W72/352
    • H10W72/5363
    • H10W72/5445
    • H10W72/884
    • H10W74/00
    • H10W90/734
    • H10W90/754

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
JP2014132430A 2014-06-27 2014-06-27 半導体装置の製造方法 Active JP6249892B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014132430A JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法
US14/665,577 US9437460B2 (en) 2014-06-27 2015-03-23 Method for manufacturing semiconductor device
DE102015210603.9A DE102015210603B4 (de) 2014-06-27 2015-06-10 Verfahren zur Herstellung einer Halbleitervorrichtung
CN201510363009.3A CN105225971B (zh) 2014-06-27 2015-06-26 半导体装置的制造方法

Applications Claiming Priority (1)

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JP2014132430A JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法

Publications (3)

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JP2016012604A JP2016012604A (ja) 2016-01-21
JP2016012604A5 JP2016012604A5 (enExample) 2016-06-23
JP6249892B2 true JP6249892B2 (ja) 2017-12-20

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JP2014132430A Active JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法

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US (1) US9437460B2 (enExample)
JP (1) JP6249892B2 (enExample)
CN (1) CN105225971B (enExample)
DE (1) DE102015210603B4 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017159505A1 (ja) 2016-03-18 2017-09-21 富士電機株式会社 半導体装置、金属電極部材および半導体装置の製造方法
US10062621B2 (en) * 2016-04-30 2018-08-28 Ixys, Llc Power semiconductor device module having mechanical corner press-fit anchors
US10347549B2 (en) * 2016-04-30 2019-07-09 Littelfuse, Inc. Power semiconductor device module having mechanical corner press-fit anchors
WO2018135176A1 (ja) * 2017-01-17 2018-07-26 富士電機株式会社 半導体装置
US11244836B2 (en) * 2017-06-21 2022-02-08 Mitsubishi Electric Corporation Semiconductor apparatus, power conversion device, and method for manufacturing semiconductor apparatus
CN107946273A (zh) * 2017-12-22 2018-04-20 江苏宏微科技股份有限公司 一种插接功率模块封装装置
JP7107120B2 (ja) * 2018-09-14 2022-07-27 富士電機株式会社 半導体装置、半導体装置の製造方法
JP7279354B2 (ja) * 2018-12-17 2023-05-23 富士電機株式会社 半導体素子及び半導体素子の識別方法
JP7293936B2 (ja) 2019-07-19 2023-06-20 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7404834B2 (ja) * 2019-12-06 2023-12-26 富士電機株式会社 半導体装置及び半導体装置の製造方法
CN111769090A (zh) * 2020-07-21 2020-10-13 无锡利普思半导体有限公司 塑封功率模块、塑封模具及塑封方法
JP7666045B2 (ja) * 2021-03-19 2025-04-22 富士電機株式会社 半導体装置
JP7692720B2 (ja) * 2021-04-06 2025-06-16 三菱重工業株式会社 パワーモジュール、及びパワーモジュールの製造方法
JP7484800B2 (ja) * 2021-04-08 2024-05-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
US12494418B2 (en) * 2021-07-26 2025-12-09 Infineon Technologies Ag Power module with press-fit contacts
US11901273B2 (en) * 2021-07-26 2024-02-13 Infineon Technologies Ag Power module with press-fit contacts
DE102021121797A1 (de) * 2021-08-23 2023-02-23 Infineon Technologies Ag Leistungshalbleitermodul mit buchse oder einpresspin und verfahren zu seiner herstellung
US12438068B2 (en) 2022-01-18 2025-10-07 Infineon Technologies Austria Ag Stacked module arrangement
US20240170378A1 (en) * 2022-11-17 2024-05-23 Semiconductor Components Industries, Llc Power module package with molded via and dual side press-fit pin
WO2024110052A1 (en) * 2022-11-25 2024-05-30 Huawei Digital Power Technologies Co., Ltd. Molded power module
DE102024202665A1 (de) * 2024-03-20 2025-09-25 Volkswagen Aktiengesellschaft Verfahren zur Herstellung einer leistungselektronischen Einrichtung, leistungselektronische Einrichtung und Kraftfahrzeug

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US5118027A (en) * 1991-04-24 1992-06-02 International Business Machines Corporation Method of aligning and mounting solder balls to a substrate
JP4626098B2 (ja) * 2001-06-15 2011-02-02 イビデン株式会社 プリント配線板の製造方法
JP5358077B2 (ja) * 2007-09-28 2013-12-04 スパンション エルエルシー 半導体装置及びその製造方法
DE102008005547B4 (de) * 2008-01-23 2013-08-29 Infineon Technologies Ag Leistungshalbleitermodul und Schaltungsanordnung mit einem Leistungshalbleitermodul
DE102008029829B4 (de) * 2008-06-25 2012-10-11 Danfoss Silicon Power Gmbh Vertikal nach oben kontaktierender Halbleiter und Verfahren zu dessen Herstellung
JP5101467B2 (ja) * 2008-11-26 2012-12-19 三菱電機株式会社 電力用半導体モジュール
JP5012772B2 (ja) 2008-11-28 2012-08-29 三菱電機株式会社 半導体装置の製造方法および半導体装置
JP5245880B2 (ja) * 2009-02-04 2013-07-24 三菱電機株式会社 電力用半導体モジュールとその製造方法
JP5262793B2 (ja) 2009-02-13 2013-08-14 三菱電機株式会社 電力用半導体装置とその製造方法
JP5268786B2 (ja) * 2009-06-04 2013-08-21 三菱電機株式会社 半導体モジュール
JP2011187819A (ja) 2010-03-10 2011-09-22 Mitsubishi Electric Corp 樹脂封止型パワーモジュールおよびその製造方法
US20120261689A1 (en) * 2011-04-13 2012-10-18 Bernd Karl Appelt Semiconductor device packages and related methods
CN103824821B (zh) * 2014-03-11 2016-04-06 湖南进芯电子科技有限公司 一种塑料密闭封装的开关电源模块及其制备方法

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Publication number Publication date
US9437460B2 (en) 2016-09-06
CN105225971A (zh) 2016-01-06
JP2016012604A (ja) 2016-01-21
CN105225971B (zh) 2018-12-04
DE102015210603B4 (de) 2019-05-23
DE102015210603A1 (de) 2015-12-31
US20150380274A1 (en) 2015-12-31

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