DE102015210603B4 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
DE102015210603B4
DE102015210603B4 DE102015210603.9A DE102015210603A DE102015210603B4 DE 102015210603 B4 DE102015210603 B4 DE 102015210603B4 DE 102015210603 A DE102015210603 A DE 102015210603A DE 102015210603 B4 DE102015210603 B4 DE 102015210603B4
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cylindrical electrode
cavity
substrate
cylindrical
electrode
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DE102015210603.9A
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German (de)
English (en)
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DE102015210603A1 (de
Inventor
Naoki Yoshimatsu
Kiyohiro Uchida
Taketoshi Shikano
Masayoshi Shinkai
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE102015210603.9A 2014-06-27 2015-06-10 Verfahren zur Herstellung einer Halbleitervorrichtung Active DE102015210603B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-132430 2014-06-27
JP2014132430A JP6249892B2 (ja) 2014-06-27 2014-06-27 半導体装置の製造方法

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Publication Number Publication Date
DE102015210603A1 DE102015210603A1 (de) 2015-12-31
DE102015210603B4 true DE102015210603B4 (de) 2019-05-23

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US (1) US9437460B2 (enExample)
JP (1) JP6249892B2 (enExample)
CN (1) CN105225971B (enExample)
DE (1) DE102015210603B4 (enExample)

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US10347549B2 (en) * 2016-04-30 2019-07-09 Littelfuse, Inc. Power semiconductor device module having mechanical corner press-fit anchors
US10062621B2 (en) * 2016-04-30 2018-08-28 Ixys, Llc Power semiconductor device module having mechanical corner press-fit anchors
CN109417068B (zh) * 2017-01-17 2022-05-06 富士电机株式会社 半导体装置
US11244836B2 (en) * 2017-06-21 2022-02-08 Mitsubishi Electric Corporation Semiconductor apparatus, power conversion device, and method for manufacturing semiconductor apparatus
CN107946273A (zh) * 2017-12-22 2018-04-20 江苏宏微科技股份有限公司 一种插接功率模块封装装置
JP7107120B2 (ja) * 2018-09-14 2022-07-27 富士電機株式会社 半導体装置、半導体装置の製造方法
JP7279354B2 (ja) * 2018-12-17 2023-05-23 富士電機株式会社 半導体素子及び半導体素子の識別方法
JP7293936B2 (ja) 2019-07-19 2023-06-20 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7404834B2 (ja) * 2019-12-06 2023-12-26 富士電機株式会社 半導体装置及び半導体装置の製造方法
CN111769090A (zh) * 2020-07-21 2020-10-13 无锡利普思半导体有限公司 塑封功率模块、塑封模具及塑封方法
JP7666045B2 (ja) * 2021-03-19 2025-04-22 富士電機株式会社 半導体装置
JP7692720B2 (ja) * 2021-04-06 2025-06-16 三菱重工業株式会社 パワーモジュール、及びパワーモジュールの製造方法
JP7484800B2 (ja) * 2021-04-08 2024-05-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
US11901273B2 (en) * 2021-07-26 2024-02-13 Infineon Technologies Ag Power module with press-fit contacts
US12494418B2 (en) * 2021-07-26 2025-12-09 Infineon Technologies Ag Power module with press-fit contacts
DE102021121797A1 (de) * 2021-08-23 2023-02-23 Infineon Technologies Ag Leistungshalbleitermodul mit buchse oder einpresspin und verfahren zu seiner herstellung
US12438068B2 (en) 2022-01-18 2025-10-07 Infineon Technologies Austria Ag Stacked module arrangement
US20240170378A1 (en) * 2022-11-17 2024-05-23 Semiconductor Components Industries, Llc Power module package with molded via and dual side press-fit pin
CN120239903A (zh) * 2022-11-25 2025-07-01 华为数字能源技术有限公司 模具成型功率模块
DE102024202665A1 (de) * 2024-03-20 2025-09-25 Volkswagen Aktiengesellschaft Verfahren zur Herstellung einer leistungselektronischen Einrichtung, leistungselektronische Einrichtung und Kraftfahrzeug

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JP2011187819A (ja) 2010-03-10 2011-09-22 Mitsubishi Electric Corp 樹脂封止型パワーモジュールおよびその製造方法

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