JP7484800B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title description 16
- 229920005989 resin Polymers 0.000 claims description 102
- 239000011347 resin Substances 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000000465 moulding Methods 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
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- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
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Description
本開示に係る半導体装置の製造方法では、電極の切り欠きは金型の樹脂が流し込まれる空間に配置されない。このため、切り欠きに樹脂が入り込むことを抑制できる。従って、樹脂バリを抑制できる。
図1は、実施の形態1に係る半導体装置100の断面図である。半導体装置100はベース板10と、ベース板10の上面に接合材12で接合された絶縁基板14を備える。絶縁基板14は、導電層14aと、導電層14aの上に設けられた絶縁層14bと、絶縁層14bの上に設けられた回路パターン14cを備える。回路パターン14cには、接合材16で半導体チップ18が接合されている。
図22は、実施の形態2に係る電極70と樹脂ケース250の構造を説明する平面図である。図23は、実施の形態2に係る電極70と樹脂ケース250の構造を説明する断面図である。本実施の形態では樹脂ケース250の上面52に形成された溝の構造が実施の形態1と異なる。他の構造は実施の形態1の構造と同様である。
図24は、実施の形態3に係る電極70と樹脂ケース50の構造を説明する平面図である。本実施の形態では、電極70の幅方向で、屈曲部76のうち樹脂ケース50に覆われた部分の長さW3は、屈曲部76の長さW2の1/2以上である。これにより、樹脂ケース50の製造時において、電極70の曲げ加工を容易にすることができる。また、電極70を曲げる際に樹脂ケース50にかかる応力を抑制できる。
図25は、実施の形態4に係る電極470と樹脂ケース50の構造を説明する断面図である。本実施の形態では、電極470の構造が実施の形態1と異なる。他の構造は実施の形態1の構造と同様である。電極470には、切り欠き74に加えて、屈曲部76の内側にさらに切り欠き478が形成される。切り欠き478はコイニングとも呼ばれる。電極470に予め切り欠き478を形成しておくことにより、電極470の曲げ加工を容易に実施できる。また、電極470を曲げる際に樹脂ケース50にかかる応力を抑制できる。
Claims (10)
- 基板と、
平面視で前記基板の直上の領域を囲む樹脂ケースと、
前記領域に設けられた半導体チップと、
前記樹脂ケースの上面から引き出された第1部分と、前記樹脂ケースの前記上面よりも下方に設けられ、前記樹脂ケースに挿入される第2部分と、を有し、前記半導体チップと電気的に接続された電極と、
を備え、
前記電極には、前記第1部分から前記第2部分にわたって第1切り欠きが形成され、
前記樹脂ケースの前記上面には、前記第1切り欠きのうち前記第2部分に形成された部分を露出させるように第1溝が形成されることを特徴とする半導体装置。 - 前記第1溝は、前記第1切り欠きを形成する前記第2部分の上面を露出させることを特徴とする請求項1に記載の半導体装置。
- 前記第1部分は前記樹脂ケースの前記上面に沿って延び、
前記第1切り欠きは隣接する導電性部品と前記電極との沿面距離を延長するように形成されていることを特徴とする請求項1または2に記載の半導体装置。 - 前記樹脂ケースの前記上面には、前記電極のうち、前記電極の幅方向で前記第1切り欠きが形成された部分と反対側の部分を露出させる第2溝が形成されることを特徴とする請求項1から3の何れか1項に記載の半導体装置。
- 前記樹脂ケースの前記上面には、前記電極のうち隣接する他の電極側の部分を露出させるように溝が形成されることを特徴とする請求項1から3の何れか1項に記載の半導体装置。
- 前記第1部分は前記樹脂ケースの前記上面に沿って延び、
前記第2部分は前記樹脂ケースに挿入されて下方に延び、
前記電極は、前記第1部分と前記第2部分とを繋ぐ屈曲部を有し、
前記電極の幅方向で、前記屈曲部のうち前記樹脂ケースに覆われた部分の長さは、前記屈曲部の長さの1/2以上であることを特徴とする請求項1から5の何れか1項に記載の半導体装置。 - 前記第1部分は前記樹脂ケースの前記上面に沿って延び、
前記第2部分は前記樹脂ケースに挿入されて下方に延び、
前記電極は、前記第1部分と前記第2部分とを繋ぐ屈曲部を有し、
前記電極には、前記屈曲部の内側に第2切り欠きが形成されることを特徴とする請求項1から6の何れか1項に記載の半導体装置。 - 前記半導体チップはワイドバンドギャップ半導体から形成されていることを特徴とする請求項1から7の何れか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料またはダイヤモンドであることを特徴とする請求項8に記載の半導体装置。
- 切り欠きが形成された電極の一部が金型内の空間に配置され、前記切り欠きは前記空間に配置されないように、前記金型に前記電極を挿入し、
前記金型に前記電極が挿入された状態で、前記空間に樹脂を流し込んで、前記電極が挿入された樹脂ケースを形成し、
平面視で基板の直上の領域を囲むように、前記樹脂ケースを配置し、
前記領域に半導体チップを配置することを特徴とする半導体装置の製造方法。
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