CN115206890A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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CN115206890A
CN115206890A CN202210341471.3A CN202210341471A CN115206890A CN 115206890 A CN115206890 A CN 115206890A CN 202210341471 A CN202210341471 A CN 202210341471A CN 115206890 A CN115206890 A CN 115206890A
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electrode
resin case
semiconductor device
resin
disposed
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清水康贵
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

目的在于得到能够抑制树脂毛刺的半导体装置及半导体装置的制造方法。本发明涉及的半导体装置具有：基板；树脂壳体，其在俯视观察时将所述基板的正上方的区域包围；半导体芯片，其设置于所述区域；以及电极，其具有从所述树脂壳体的上表面引出的第1部分和设置于比所述树脂壳体的所述上表面更靠下方处且插入至所述树脂壳体的第2部分，所述电极与所述半导体芯片电连接，在所述电极从所述第1部分跨至所述第2部分而形成第1切口，在所述树脂壳体的所述上表面以使所述第1切口中的在所述第2部分形成的部分露出的方式形成第1槽。

Description

半导体装置及半导体装置的制造方法
技术领域
本发明涉及半导体装置及半导体装置的制造方法。
背景技术
在专利文献1中公开了能够防止树脂毛刺附着于外部电极的半导体装置。就该半导体装置而言，IGBT与外部电极电连接。框体以外部电极的一部分被引出至外部的方式将IGBT封装。在外部电极，在从框体引出的部分的根部设置有贯通孔。在贯通孔的至少一部分填充有构成框体的热塑性树脂。
专利文献1：日本特开2009－277959号公报
就专利文献1这样的半导体装置而言，当在外部电极存在切口的情况下，有可能在树脂壳体的成型时树脂进入切口而产生树脂毛刺。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于得到能够抑制树脂毛刺的半导体装置及半导体装置的制造方法。
本发明涉及的半导体装置具有：基板；树脂壳体，其在俯视观察时将所述基板的正上方的区域包围；半导体芯片，其设置于所述区域；以及电极，其具有从所述树脂壳体的上表面引出的第1部分和设置于比所述树脂壳体的所述上表面更靠下方处且插入至所述树脂壳体的第2部分，所述电极与所述半导体芯片电连接，在所述电极从所述第1部分跨至所述第2部分而形成有第1切口，在所述树脂壳体的所述上表面以使所述第1切口中的在所述第2部分形成的部分露出的方式形成第1槽。
在本发明涉及的半导体装置的制造方法中，以形成有切口的电极的一部分配置于模具内的空间，所述切口不配置于所述空间的方式将所述电极插入至所述模具，在所述电极被插入至所述模具的状态下，使树脂流入至所述空间而形成插入有所述电极的树脂壳体，以在俯视观察时将基板的正上方的区域包围的方式配置所述树脂壳体，在所述区域配置半导体芯片。
发明的效果
就本发明涉及的半导体装置而言，在树脂壳体的上表面以使电极的第1切口中的在第2部分形成的部分露出的方式形成第1槽。根据该结构，在树脂壳体的成型时能够在第1切口的周围配置模具，能够抑制树脂进入至第1切口。因此，能够抑制树脂毛刺。
在本发明涉及的半导体装置的制造方法中，电极的切口不配置于模具的供树脂流入的空间。因此，能够抑制树脂进入至切口。因此，能够抑制树脂毛刺。
附图说明
图1是实施方式1涉及的半导体装置的剖视图。
图2是对实施方式1涉及的电极和树脂壳体的构造进行说明的斜视图。
图3是从另一个角度观察实施方式1涉及的电极和树脂壳体时的斜视图。
图4是对实施方式1涉及的电极和树脂壳体的构造进行说明的俯视图。
图5是表示在实施方式1涉及的树脂壳体安装有螺母的状态的图。
图6是表示实施方式1涉及的电极被弯折后的状态的斜视图。
图7是从另一个角度观察实施方式1涉及的电极被弯折后的状态时的斜视图。
图8是表示实施方式1涉及的电极被弯折后的状态的俯视图。
图9是对实施方式1涉及的半导体装置的制造方法进行说明的图。
图10是对实施方式1涉及的半导体装置的制造方法进行说明的图。
图11是对实施方式1涉及的半导体装置的制造方法进行说明的图。
图12是对实施方式1涉及的半导体装置的制造方法进行说明的图。
图13是对实施方式1涉及的半导体装置的制造方法进行说明的图。
图14是对对比例涉及的电极和树脂壳体的构造进行说明的斜视图。
图15是表示对比例涉及的电极被弯折后的状态的斜视图。
图16是表示对比例涉及的半导体装置的去除了树脂毛刺后的状态的斜视图。
图17是对对比例涉及的电极与导电性部件之间的沿面距离进行说明的斜视图。
图18是对对比例涉及的电极与导电性部件之间的沿面距离进行说明的俯视图。
图19是对实施方式1涉及的电极与导电性部件之间的沿面距离进行说明的斜视图。
图20是对实施方式1涉及的电极与导电性部件之间的沿面距离进行说明的俯视图。
图21是对实施方式1涉及的电极的宽度进行说明的图。
图22是对实施方式2涉及的电极和树脂壳体的构造进行说明的俯视图。
图23是对实施方式2涉及的电极和树脂壳体的构造进行说明的剖视图。
图24是对实施方式3涉及的电极和树脂壳体的构造进行说明的俯视图。
图25是对实施方式4涉及的电极和树脂壳体的构造进行说明的剖视图。
具体实施方式
参照附图，对本实施方式涉及的半导体装置及半导体装置的制造方法进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1
图1是实施方式1涉及的半导体装置100的剖视图。半导体装置100具有基座板10、在基座板10的上表面通过接合材料12而与基座板10接合的绝缘基板14。绝缘基板14具有导电层14a、在导电层14a之上设置的绝缘层14b和在绝缘层14b之上设置的电路图案14c。在电路图案14c通过接合材料16而接合有半导体芯片18。
半导体装置100具有在俯视观察时将基座板10或绝缘基板14的正上方的区域包围的树脂壳体50。半导体芯片18设置于基座板10或绝缘基板14的正上方的区域。基座板10或绝缘基板14的正上方的区域由封装材料22封装。在封装材料22之上设置盖24。
在树脂壳体50插入有电极70、80。树脂壳体50也被称为嵌入壳体。电极70、80经由导线20或电路图案14c而与半导体芯片18电连接。
电极70具有第1部分71和第2部分72。第1部分71是从树脂壳体50的上表面52引出的部分。第2部分72设置于比树脂壳体50的上表面52更靠下方处，是被插入至树脂壳体50的部分。第2部分72向下方延伸。在本实施方式中，第2部分72的下端经由导线20而与半导体芯片18连接。
图2是对实施方式1涉及的电极70和树脂壳体50的构造进行说明的斜视图。图3是从另一个角度观察实施方式1涉及的电极70和树脂壳体50时的斜视图。图4是对实施方式1涉及的电极70和树脂壳体50的构造进行说明的俯视图。电极70例如呈平板状。在电极70，从第1部分71跨至第2部分72而形成切口74。切口74是将电极70的一侧切去。
在树脂壳体50的上表面52以使切口74中的在第2部分72形成的部分露出的方式形成槽54。如在图4中作为斜线部而示出的那样，槽54是以在俯视观察时将电极70的形成有切口74的部分覆盖的方式形成的。槽54的底部设置于比切口74更靠下方处。槽54使形成切口74的第2部分72的上表面72a露出。即，通过槽54而使切口74整体从树脂壳体50露出。
图5是表示在实施方式1涉及的树脂壳体50安装有螺母90的状态的图。在树脂壳体50的上表面52形成用于收容螺母90的凹部。
图6是表示实施方式1涉及的电极70被弯折后的状态的斜视图。图7是从另一个角度观察实施方式1涉及的电极70被弯折后的状态时的斜视图。图8是表示实施方式1涉及的电极70被弯折后的状态的俯视图。在电极70被弯折后的状态下，第1部分71沿树脂壳体50的上表面52延伸。此时，螺母90的孔与在第1部分71形成的贯通孔重合。另外，电极70具有将第1部分71与第2部分72连接的弯折部76。
接下来，对半导体装置100的制造方法进行说明。图9～图13是对实施方式1涉及的半导体装置100的制造方法进行说明的图。首先，如图9所示，准备模具(步骤1)。模具由上部模具91和下部模具92构成。模具是树脂成型用的模具，例如由金属形成。模具也可以由除金属以外的材质形成。
接下来，如图10所示，向模具插入电极70(步骤2)。接下来，如图11所示，将模具合模(步骤3)。由此，形成被上部模具91和下部模具92覆盖的空间93。这里，电极70的一部分配置于模具内的空间93，切口74不配置于空间93。切口74设置于比空间93更靠上方处。接下来，如图12所示，在向模具插入了电极70的状态下使树脂51流入空间93(步骤4)。由此，如图13所示，形成插入有电极70的树脂壳体50(步骤5)。这里，以电极70为例进行了说明，但就电极80而言，也可以在步骤2中插入至模具。
接下来，以在俯视观察时将绝缘基板14的正上方的区域包围的方式配置树脂壳体50。另外，在绝缘基板14的正上方的区域配置半导体芯片18。接下来，进行经由导线20的连接，通过封装材料22将树脂壳体50的内部封装。另外，在封装材料22之上设置盖24。
图14是对对比例涉及的电极70和树脂壳体150的构造进行说明的斜视图。图15是表示对比例涉及的电极70被弯折后的状态的斜视图。在对比例涉及的树脂壳体150不形成槽54。在这样的结构中，有可能在树脂壳体150的成型时树脂51a进入至电极70的切口74。树脂51a在电极70被弯折之后也残留下来，成为树脂毛刺。因此，需要进行树脂毛刺的去除。图16是表示对比例涉及的半导体装置的去除了树脂毛刺后的状态的斜视图。
与此相对，在本实施方式中，在树脂壳体50的上表面52以使电极70的切口74中的在第2部分72形成的部分露出的方式形成槽54。根据该结构，在树脂壳体50的成型时能够在切口74的周围配置模具，能够抑制树脂进入至切口74。因此，能够抑制树脂毛刺。另外，在本实施方式的半导体装置100的制造方法中，电极70的切口74不配置于模具的供树脂51流入的空间93。因此，能够抑制树脂51进入至切口74。因此，能够抑制树脂毛刺。由此，能够削减将树脂毛刺去除的工序，能够降低树脂壳体50的制造成本。
另外，在本实施方式中，电极70的切口74从树脂壳体50露出，因此，能够对电极70是否配置于正确的位置进行确认。另外，能够通过嵌入壳体的通常的制造方法制造树脂壳体50。因此，能够抑制用于树脂壳体50的制造的新设备投资。
图17是对对比例涉及的电极70与导电性部件95之间的沿面距离d1进行说明的斜视图。图18是对对比例涉及的电极70与导电性部件95之间的沿面距离d1进行说明的俯视图。导电性部件95例如是用于将半导体装置100安装于产品的产品安装螺钉。电极70的切口74是为了确保与相邻的导电性部件95之间的合适的沿面距离d1而形成的。即，电极70的切口74是以使相邻的导电性部件95与电极70之间的沿面距离d1延长的方式形成的。
图19是对实施方式1涉及的电极70与导电性部件95之间的沿面距离d2进行说明的斜视图。图20是对实施方式1涉及的电极70与导电性部件95之间的沿面距离d2进行说明的俯视图。在本实施方式中，在树脂壳体50形成槽54，因此，能够使电极70与导电性部件95之间的沿面距离d2比对比例中的沿面距离d1长。
图21是对实施方式1涉及的电极70的宽度W1进行说明的图。在本实施方式中，如上所述，能够将电极70与导电性部件95之间的沿面距离d2确保得大，因此能够使电极70的宽度W1增加。因此，能够使电极70容易散热，能够减少产品使用时的电极70的发热。
本实施方式的半导体装置100能够用于发电、送电、能量的高效利用或再生等各种情况。半导体芯片18例如可以是IGBT(Insulated Gate Bipolar Transistor)或二极管。半导体装置100所具有的半导体芯片18的数量不受限定。另外，半导体装置100的构造也不限定于图1所示的构造。例如，半导体芯片18与电极70、80也可以不经由导线20而是直接连接。
半导体芯片18例如由硅或宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或金刚石。在半导体芯片18由宽带隙半导体形成的情况下，设想的是大的电流密度。在本实施方式中，通过增加电极70的宽度，从而在半导体芯片18的电流密度大的情况下也能够减少发热。
这些变形能够适当应用于以下的实施方式涉及的半导体装置及半导体装置的制造方法。此外，关于以下的实施方式涉及的半导体装置及半导体装置的制造方法，由于与实施方式1之间的共通点多，因此以与实施方式1之间的不同点为中心进行说明。
实施方式2
图22是对实施方式2涉及的电极70和树脂壳体250的构造进行说明的俯视图。图23是对实施方式2涉及的电极70和树脂壳体250的构造进行说明的剖视图。在本实施方式中，在树脂壳体250的上表面52形成的槽的构造与实施方式1不同。其它构造与实施方式1的构造相同。
在树脂壳体250的上表面52除了槽54以外还形成槽256。槽256使电极70中的在电极70的宽度方向上与形成有切口74的部分相反侧的部分露出。槽256使电极70中的相邻的其它电极70侧的部分露出。即，在树脂壳体250的上表面52以将电极70的两侧覆盖的方式形成槽54、256。
如图23所示，与没有槽256的情况下的相邻的电极70之间的沿面距离d3相比，存在槽256的情况下的相邻的电极70之间的沿面距离d4大。因此，能够进一步增加电极70的宽度W1，能够减少产品使用时的电极70的发热。
实施方式3
图24是对实施方式3涉及的电极70和树脂壳体50的构造进行说明的俯视图。在本实施方式中，在电极70的宽度方向上，弯折部76中的被树脂壳体50覆盖的部分的长度W3大于或等于弯折部76的长度W2的1/2。由此，在树脂壳体50的制造时，能够使电极70的弯折加工变得容易。另外，能够在对电极70进行弯折时抑制施加于树脂壳体50的应力。
实施方式4
图25是对实施方式4涉及的电极470和树脂壳体50的构造进行说明的剖视图。在本实施方式中，电极470的构造与实施方式1不同。其它构造与实施方式1的构造相同。在电极470，除了切口74以外还在弯折部76的内侧形成切口478。切口478也被称为压印部。通过在电极470预先形成切口478，从而能够容易地实施电极470的弯折加工。另外，能够在对电极470进行弯折时抑制施加于树脂壳体50的应力。
此外，在各实施方式中说明过的技术特征也可以适当地组合而使用。
标号的说明
10基座板，12接合材料，14绝缘基板，14a导电层，14b绝缘层，14c电路图案，16接合材料，18半导体芯片，20导线，22封装材料，24盖，50树脂壳体，51树脂，51a树脂，52上表面，54槽，70电极，71第1部分，72第2部分，72a上表面，74切口，76弯折部，80电极，90螺母，91上部模具，92下部模具，93空间，95导电性部件，100半导体装置，150树脂壳体，250树脂壳体，256槽，470电极，478切口。

Claims (10)

1.一种半导体装置，其特征在于，具有：
基板；
树脂壳体，其在俯视观察时将所述基板的正上方的区域包围；
半导体芯片，其设置于所述区域；以及
电极，其具有从所述树脂壳体的上表面引出的第1部分和设置于比所述树脂壳体的所述上表面更靠下方处且插入至所述树脂壳体的第2部分，所述电极与所述半导体芯片电连接，
在所述电极从所述第1部分跨至所述第2部分而形成有第1切口，
在所述树脂壳体的所述上表面以使所述第1切口中的在所述第2部分形成的部分露出的方式形成第1槽。
2.根据权利要求1所述的半导体装置，其特征在于，
所述第1槽使形成所述第1切口的所述第2部分的上表面露出。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述第1部分沿所述树脂壳体的所述上表面延伸，
所述第1切口是以使相邻的导电性部件与所述电极之间的沿面距离延长的方式形成的。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
在所述树脂壳体的所述上表面形成使所述电极中的在所述电极的宽度方向上与形成有所述第1切口的部分相反侧的部分露出的第2槽。
5.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
在所述树脂壳体的所述上表面以使所述电极中的相邻的其它电极侧的部分露出的方式形成槽。
6.根据权利要求1至5中任一项所述的半导体装置，其特征在于，
所述第1部分沿所述树脂壳体的所述上表面延伸，
所述第2部分插入至所述树脂壳体而向下方延伸，
所述电极具有将所述第1部分与所述第2部分连接的弯折部，
在所述电极的宽度方向上，所述弯折部中的被所述树脂壳体覆盖的部分的长度大于或等于所述弯折部的长度的1/2。
7.根据权利要求1至6中任一项所述的半导体装置，其特征在于，
所述第1部分沿所述树脂壳体的所述上表面延伸，
所述第2部分插入至所述树脂壳体而向下方延伸，
所述电极具有将所述第1部分与所述第2部分连接的弯折部，
在所述电极，在所述弯折部的内侧形成第2切口。
8.根据权利要求1至7中任一项所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
9.根据权利要求8所述的半导体装置，其特征在于，
所述宽带隙半导体是碳化硅、氮化镓类材料或金刚石。
10.一种半导体装置的制造方法，其特征在于，
以形成有切口的电极的一部分配置于模具内的空间，所述切口不配置于所述空间的方式将所述电极插入至所述模具，
在所述电极被插入至所述模具的状态下，使树脂流入至所述空间而形成插入有所述电极的树脂壳体，
以在俯视观察时将基板的正上方的区域包围的方式配置所述树脂壳体，
在所述区域配置半导体芯片。
CN202210341471.3A 2021-04-08 2022-04-02 半导体装置及半导体装置的制造方法 Pending CN115206890A (zh)

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