JP6246509B2 - 抵抗性メモリの感知増幅回路 - Google Patents

抵抗性メモリの感知増幅回路 Download PDF

Info

Publication number
JP6246509B2
JP6246509B2 JP2013136299A JP2013136299A JP6246509B2 JP 6246509 B2 JP6246509 B2 JP 6246509B2 JP 2013136299 A JP2013136299 A JP 2013136299A JP 2013136299 A JP2013136299 A JP 2013136299A JP 6246509 B2 JP6246509 B2 JP 6246509B2
Authority
JP
Japan
Prior art keywords
transistor
latch
sense amplifier
output terminal
differential output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013136299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014010885A (ja
JP2014010885A5 (enExample
Inventor
ヨンシク・ヨン
スホ・チャ
チャン−キュン・キム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2014010885A publication Critical patent/JP2014010885A/ja
Publication of JP2014010885A5 publication Critical patent/JP2014010885A5/ja
Application granted granted Critical
Publication of JP6246509B2 publication Critical patent/JP6246509B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2013136299A 2012-06-29 2013-06-28 抵抗性メモリの感知増幅回路 Active JP6246509B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/538,869 2012-06-29
US13/538,869 US9070424B2 (en) 2012-06-29 2012-06-29 Sense amplifier circuitry for resistive type memory

Publications (3)

Publication Number Publication Date
JP2014010885A JP2014010885A (ja) 2014-01-20
JP2014010885A5 JP2014010885A5 (enExample) 2016-08-18
JP6246509B2 true JP6246509B2 (ja) 2017-12-13

Family

ID=49754272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013136299A Active JP6246509B2 (ja) 2012-06-29 2013-06-28 抵抗性メモリの感知増幅回路

Country Status (5)

Country Link
US (1) US9070424B2 (enExample)
JP (1) JP6246509B2 (enExample)
KR (1) KR102087618B1 (enExample)
CN (1) CN103531235B (enExample)
DE (1) DE102013106684B8 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104641417B (zh) * 2012-09-18 2018-04-03 学校法人中央大学 非易失性存储装置及其控制方法
US9147454B2 (en) * 2013-01-14 2015-09-29 Qualcomm Incorporated Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
US9343147B2 (en) * 2013-03-08 2016-05-17 Microship Technology Incorporated Resistive random access memory (ReRAM) and conductive bridging random access memory (CBRAM) cross coupled fuse and read method and system
US9123414B2 (en) 2013-11-22 2015-09-01 Micron Technology, Inc. Memory systems and memory programming methods
US9336875B2 (en) 2013-12-16 2016-05-10 Micron Technology, Inc. Memory systems and memory programming methods
US20160336062A1 (en) * 2014-01-31 2016-11-17 Hewlett Packard Enterprise Development Lp Accessing a resistive storage element-based memory cell array
US9111623B1 (en) 2014-02-12 2015-08-18 Qualcomm Incorporated NMOS-offset canceling current-latched sense amplifier
WO2015186975A1 (ko) * 2014-06-03 2015-12-10 제주대학교 산학협력단 멤리스터를 이용한 메모리 셀
WO2016018247A1 (en) 2014-07-29 2016-02-04 Hewlett-Packard Development Company, L.P. Reference currents for input current comparisons
CN104252879A (zh) * 2014-09-26 2014-12-31 中国科学院微电子研究所 一种阻变存储器读出电路
US9691462B2 (en) * 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory
US9812197B2 (en) 2014-10-20 2017-11-07 Hewlett Packard Enterprise Development Lp Clamp circuit
WO2016157719A1 (ja) * 2015-03-27 2016-10-06 パナソニックＩｐマネジメント株式会社 半導体記憶装置の書き換え方法及び半導体記憶装置
US9460784B1 (en) * 2015-04-22 2016-10-04 Micron Technology, Inc. Reference voltage generation apparatuses and methods
US10096361B2 (en) * 2015-08-13 2018-10-09 Arm Ltd. Method, system and device for non-volatile memory device operation
US9601165B1 (en) 2015-09-24 2017-03-21 Intel IP Corporation Sense amplifier
KR20170090293A (ko) * 2016-01-28 2017-08-07 삼성전자주식회사 분리 소스라인 구조를 갖는 메모리 장치
KR102476770B1 (ko) * 2016-04-08 2022-12-13 에스케이하이닉스 주식회사 전자 장치
US10082964B2 (en) 2016-04-27 2018-09-25 Micron Technology, Inc Data caching for ferroelectric memory
US10090027B2 (en) 2016-05-25 2018-10-02 Ememory Technology Inc. Memory system with low read power
US9859000B1 (en) * 2016-06-17 2018-01-02 Winbond Electronics Corp. Apparatus for providing adjustable reference voltage for sensing read-out data for memory
US9792984B1 (en) * 2016-10-27 2017-10-17 Arm Ltd. Method, system and device for non-volatile memory device operation
US9779795B1 (en) * 2016-11-21 2017-10-03 Nxp Usa, Inc. Magnetic random access memory (MRAM) and method of operation
JP2018147544A (ja) * 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 制御回路、半導体記憶装置、情報処理装置及び制御方法
US10032489B1 (en) 2017-03-15 2018-07-24 Sandisk Technologies Llc Sensing amplifier to detect the memory cell current transition
DE102018002714A1 (de) 2017-04-18 2018-10-18 Gabriele Trinkel Memristor Effekt System Netzwerk und Verfahren mit funktionalem Werkstoff
US10276239B2 (en) * 2017-04-27 2019-04-30 Ememory Technology Inc. Memory cell and associated array structure
US10199112B1 (en) * 2017-08-25 2019-02-05 Silicon Storage Technology, Inc. Sense amplifier circuit for reading data in a flash memory cell
JP6773621B2 (ja) 2017-09-15 2020-10-21 株式会社東芝 演算装置
US10340002B1 (en) 2018-03-30 2019-07-02 International Business Machines Corporation In-cell differential read-out circuitry for reading signed weight values in resistive processing unit architecture
US11157810B2 (en) 2018-04-16 2021-10-26 International Business Machines Corporation Resistive processing unit architecture with separate weight update and inference circuitry
CN110610738B (zh) * 2018-06-15 2023-08-18 硅存储技术公司 用于闪存存储器系统的改进的感测放大器
CN109286774B (zh) * 2018-10-09 2020-10-02 六安腾达信息科技有限公司 无线视频会议系统
US10726895B1 (en) 2019-01-07 2020-07-28 International Business Machines Corporation Circuit methodology for differential weight reading in resistive processing unit devices
US10726917B1 (en) * 2019-01-23 2020-07-28 Micron Technology, Inc. Techniques for read operations
CN111833941B (zh) * 2019-04-15 2022-09-02 中电海康集团有限公司 存储器的读电路与存储器
US10971245B1 (en) * 2019-09-20 2021-04-06 Spin Memory, Inc. Measurement of MTJ in a compact memory array
WO2021081973A1 (en) * 2019-11-01 2021-05-06 Yangtze Memory Technologies Co., Ltd. Sense amplifier for flash memory devices
US11145337B1 (en) 2020-04-13 2021-10-12 Nantero, Inc. Sense amplifiers
US11139027B1 (en) * 2020-06-25 2021-10-05 Intel Corporation Apparatus, system and method to reduce a read voltage across a memory cell and improve read sense margin
JP2022049383A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 メモリデバイス
CN112117977B (zh) * 2020-10-14 2025-04-11 桂林电子科技大学 一种基于忆阻器的增益与相位可调放大器
US11586360B2 (en) 2021-05-14 2023-02-21 International Business Machines Corporation Hybrid memory mirroring using storage class memory
TWI837940B (zh) * 2022-11-11 2024-04-01 華邦電子股份有限公司 可執行記憶體內運算之記憶體裝置
US20240338126A1 (en) * 2023-04-06 2024-10-10 Micron Technology, Inc. Conflict Avoidance for Bank-Shared Circuitry that supports Usage-Based Disturbance Mitigation
CN118711627B (zh) * 2024-08-27 2024-11-12 致真存储(北京)科技有限公司 一种读取电路以及非易失存储器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111781A (en) 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US6055178A (en) 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
DE19914488C1 (de) * 1999-03-30 2000-05-31 Siemens Ag Vorrichtung zur Bewertung der Zellenwiderstände in einem magnetoresistiven Speicher
JP4775926B2 (ja) * 2001-09-28 2011-09-21 キヤノン株式会社 磁気メモリ装置の読み出し回路
CN1272802C (zh) * 2001-10-15 2006-08-30 旺宏电子股份有限公司 增进感测放大器速度及稳定性的电路及方法
US6597598B1 (en) * 2002-04-30 2003-07-22 Hewlett-Packard Development Company, L.P. Resistive cross point memory arrays having a charge injection differential sense amplifier
US6888771B2 (en) * 2003-05-09 2005-05-03 Micron Technology, Inc. Skewed sense AMP for variable resistance memory sensing
WO2006064559A1 (ja) * 2004-12-15 2006-06-22 Fujitsu Limited 磁気メモリ装置及びその読み出し方法
US7227799B2 (en) * 2005-04-29 2007-06-05 Infineon Technologies Ag Sense amplifier for eliminating leakage current due to bit line shorts
CN101178927B (zh) * 2006-11-06 2010-05-12 财团法人工业技术研究院 应用于存储器的多稳态感测放大器
JP2009230798A (ja) 2008-03-21 2009-10-08 Toshiba Corp 磁気記憶装置
JP2010055719A (ja) * 2008-08-29 2010-03-11 Toshiba Corp 抵抗変化メモリ装置
JP5521612B2 (ja) * 2010-02-15 2014-06-18 ソニー株式会社 不揮発性半導体メモリデバイス
JP2011204302A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 半導体記憶装置
US8649203B2 (en) * 2010-08-20 2014-02-11 Shine C. Chung Reversible resistive memory using polysilicon diodes as program selectors
US8587994B2 (en) 2010-09-08 2013-11-19 Qualcomm Incorporated System and method for shared sensing MRAM

Also Published As

Publication number Publication date
DE102013106684B8 (de) 2020-11-12
KR102087618B1 (ko) 2020-03-12
KR20140004013A (ko) 2014-01-10
CN103531235B (zh) 2018-03-16
JP2014010885A (ja) 2014-01-20
CN103531235A (zh) 2014-01-22
DE102013106684A1 (de) 2014-01-02
DE102013106684B4 (de) 2020-09-17
US20140003124A1 (en) 2014-01-02
US9070424B2 (en) 2015-06-30

Similar Documents

Publication Publication Date Title
JP6246509B2 (ja) 抵抗性メモリの感知増幅回路
JP6161959B2 (ja) 抵抗式メモリのための感知増幅器回路
USRE50133E1 (en) Resistive memory device including reference cell to compensate for a leakage current
US9042152B2 (en) Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device
US8885386B2 (en) Write driver in sense amplifier for resistive type memory
CN107799133B (zh) 感测放大器、存储装置及包括其的系统
Chang et al. A 0.5 V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time
JP4859835B2 (ja) 事前充電回路を有するｍｒａｍセンス増幅器及び検知方法
KR101155451B1 (ko) Ｄｒａｍ 보안 소거
US7590003B2 (en) Self-reference sense amplifier circuit and sensing method
US10482938B2 (en) Word-line timing control in a semiconductor memory device and a memory system including the same
US9881655B2 (en) Memory circuit having data lines selectively coupled to a sense amplifier and method for operating the same
JP7430278B2 (ja) メモリでのプログラム動作中の寄生電流の防止
US9773538B2 (en) Nonvolatile semiconductor memory
CN107993683B (zh) 感测放大器、存储装置以及包括其的系统
US11342036B2 (en) Memory device for write operation including verification and operating method thereof
CN111755044B (zh) 磁性存储器的读出电路及磁性存储器
KR20220145470A (ko) 메모리 장치 및 그의 동작 방법
JP2004103057A (ja) 半導体記憶装置
KR20130022540A (ko) 데이터 리드회로, 이를 포함하는 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 데이터 리드 방법
CN109215698A (zh) 缓冲器电路和包括该缓冲器电路的装置

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20141226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160627

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160627

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170623

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171016

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171115

R150 Certificate of patent or registration of utility model

Ref document number: 6246509

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250