CN103531235B - 用于电阻型存储器的感测放大器电路 - Google Patents

用于电阻型存储器的感测放大器电路 Download PDF

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Publication number
CN103531235B
CN103531235B CN201310272067.6A CN201310272067A CN103531235B CN 103531235 B CN103531235 B CN 103531235B CN 201310272067 A CN201310272067 A CN 201310272067A CN 103531235 B CN103531235 B CN 103531235B
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transistor
latch
sense amplifier
coupled
memory
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CN201310272067.6A
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Chinese (zh)
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CN103531235A (zh
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Y.S.芸
S.茶
C-K.金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
CN201310272067.6A 2012-06-29 2013-07-01 用于电阻型存储器的感测放大器电路 Active CN103531235B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/538,869 2012-06-29
US13/538,869 US9070424B2 (en) 2012-06-29 2012-06-29 Sense amplifier circuitry for resistive type memory

Publications (2)

Publication Number Publication Date
CN103531235A CN103531235A (zh) 2014-01-22
CN103531235B true CN103531235B (zh) 2018-03-16

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US (1) US9070424B2 (enExample)
JP (1) JP6246509B2 (enExample)
KR (1) KR102087618B1 (enExample)
CN (1) CN103531235B (enExample)
DE (1) DE102013106684B8 (enExample)

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US9859000B1 (en) * 2016-06-17 2018-01-02 Winbond Electronics Corp. Apparatus for providing adjustable reference voltage for sensing read-out data for memory
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US10032489B1 (en) 2017-03-15 2018-07-24 Sandisk Technologies Llc Sensing amplifier to detect the memory cell current transition
DE102018002714A1 (de) 2017-04-18 2018-10-18 Gabriele Trinkel Memristor Effekt System Netzwerk und Verfahren mit funktionalem Werkstoff
US10276239B2 (en) * 2017-04-27 2019-04-30 Ememory Technology Inc. Memory cell and associated array structure
US10199112B1 (en) * 2017-08-25 2019-02-05 Silicon Storage Technology, Inc. Sense amplifier circuit for reading data in a flash memory cell
JP6773621B2 (ja) 2017-09-15 2020-10-21 株式会社東芝 演算装置
US10340002B1 (en) 2018-03-30 2019-07-02 International Business Machines Corporation In-cell differential read-out circuitry for reading signed weight values in resistive processing unit architecture
US11157810B2 (en) 2018-04-16 2021-10-26 International Business Machines Corporation Resistive processing unit architecture with separate weight update and inference circuitry
CN110610738B (zh) * 2018-06-15 2023-08-18 硅存储技术公司 用于闪存存储器系统的改进的感测放大器
CN109286774B (zh) * 2018-10-09 2020-10-02 六安腾达信息科技有限公司 无线视频会议系统
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CN112117977B (zh) * 2020-10-14 2025-04-11 桂林电子科技大学 一种基于忆阻器的增益与相位可调放大器
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Also Published As

Publication number Publication date
DE102013106684B8 (de) 2020-11-12
KR102087618B1 (ko) 2020-03-12
KR20140004013A (ko) 2014-01-10
JP6246509B2 (ja) 2017-12-13
JP2014010885A (ja) 2014-01-20
CN103531235A (zh) 2014-01-22
DE102013106684A1 (de) 2014-01-02
DE102013106684B4 (de) 2020-09-17
US20140003124A1 (en) 2014-01-02
US9070424B2 (en) 2015-06-30

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